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US4902608A Expired / Lapsed US ⏱️ 0.0 years remaining

Immersion development and rinse machine and process

Assignee: Texas Instruments Inc
•
Filing: 1987-12-17
•
Granted: 1990-02-20
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Expires: 2007-12-17
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Abstract

Abstract A method of processing semiconductor wafers to develop photoresist patterns which includes mounting a semiconductor on a vacuum chuck, immersing and spinning the semiconductor wafer in a developer fluid, removing the semiconductor wafer from the semiconductor wafer from the developer fluid, lowering the semiconductor wafer into the rinse bath, then removing the semiconductor wafer from the rinse bath and spin drying it.

Inventors

  • 👤 William E. Lamb
  • 👤 Jerome L. Kowaleski
  • 👤 Vojtech Haikl
  • 👤 Alan R. Bittancourt
  • 👤 Harvey S. Daugherty

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 18:33
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; Y; Y10; Y10S; Y10S134/00; Y10S134/902

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 110 words
A method of processing semiconductors in a two tank processing apparatus to develop photoresist patterns thereon, comprising the steps of; mounting a semiconductor on a vacuum chuck, immersing and spinning the semiconductor wafer upside down in a developer fluid in a first tank, circulating and filtering the developer in a controlled up-flow system, maintaining the developer solution at a constant developer strength, filling the space above the developer fluid with nitrogen while the wafer is being developed, removing the semiconductor wafer from the developer fluid, lowering the semiconductor wafer into a rinse bath in a second tank, then removing the semiconductor wafer from the rinse bath and spin drying it.
Claim 2
Independent Claim 110 words
A method of processing semiconductors in a two tank processing apparatus to develop photoresist patterns thereon, comprising the steps of; mounting a semiconductor on a vacuum chuck, immersing and spinning the semiconductor wafer upside down in a developer fluid in a first tank, circulating and filtering the developer in a controlled up-flow system, maintaining the developer solution at a constant developer strength, filling the space above the developer fluid with nitrogen while the wafer is being developed, removing the semiconductor wafer from the developer fluid, lowering the semiconductor wafer into a rinse bath in a second tank, then removing the semiconductor wafer from the rinse bath and spin drying it.
Claim 3
Dependent Claim 20 words
The method according to claim 1, including the step of heating and maintaining the developer fluid at a predetermined temperature.
Claim 4
Dependent Claim 18 words
The method according to claim 1, wherein the developer fluid is circulated in a temperature controlled up-flow system.
Claim 5
Dependent Claim 14 words
The method according to claim 1, wherein said rinse bath is circulated and filtered.

References Cited (Backward Citations)

US4136940A Cited
JPS5548A Cited
US4429983A Cited
JPH105321A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-02-19 1993-08-21 1994-02-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-02-19 1997-08-21 1998-02-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-02-19 2001-08-21 2002-02-20 $7700.00 Window Closed / Lapsed

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