US4900692A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming an oxide liner and active area mask for selective epitaxial growth in an isolation trench
Assignee: Motorola Solutions Inc
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Filing: 1989-04-24
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Granted: 1990-02-13
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Expires: 2009-04-24
Abstract
Abstract A new method is used to fabricate an isolation trench to prevent spurious epitaxial growth at the top edge of the trench opening and at pin holes in oxide over the active area. The method involves etching a deep trench into a semiconductor wafer that is patterned with a mask oxide layer, and then depositing a low temperature oxide, followed by growing a thermal oxide layer under the mask oxide and in the trench. When the oxide at the bottom of the trench is removed to provide a seed for the growth of selective epitaxial silicon, an oxide layer thick enough to leave a protective coating over the active area and at the trench opening is provided which prevents spruious epitaxial silicon growth.
Inventors
- 👤 F. J. Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 23:19
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
143 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a semiconductor substrate having a surface; providing a mask made of an oxide layer disposed on the semiconductor substrate; removing portions of the mask to provide at least one opening to the semiconductor substrate; removing portions of the substrate through the mask opening to form a trench in the substrate, wherein the trench is at least approximately 10 microns in depth from the surface of the substrate; depositing a first oxide layer such that the first oxide layer is thicker on the mask than in the trench; growing a second oxide layer to densify and level out the first oxide layer; and removing the first and second oxide layers at the bottom of the trench and removing a portion of the first oxide layer at the surface of the substrate.
Claim 2
Independent Claim
143 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a semiconductor substrate having a surface; providing a mask made of an oxide layer disposed on the semiconductor substrate; removing portions of the mask to provide at least one opening to the semiconductor substrate; removing portions of the substrate through the mask opening to form a trench in the substrate, wherein the trench is at least approximately 10 microns in depth from the surface of the substrate; depositing a first oxide layer such that the first oxide layer is thicker on the mask than in the trench; growing a second oxide layer to densify and level out the first oxide layer; and removing the first and second oxide layers at the bottom of the trench and removing a portion of the first oxide layer at the surface of the substrate.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein the first oxide layer is a low temperature oxide, and the second oxide layer is a thermal oxide layer.
Claim 4
Independent Claim
175 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a semiconductor substrate having a surface; providing an oxide mask on the surface of the substrate, wherein the mask has at least one opening therein; etching the substrate through the mask opening to form a trench having a depth of at least approximately 10 microns from the surface of the substrate; depositing a low temperature oxide such that cusping at the top of the trench reduces the deposition of the low temperature oxide in the trench thereby depositing a thicker amount on the surface of the oxide mask than on the trench sidewalls; growing a thermal oxide layer under the low temperature oxide layer to densify and to level out the low temperature oxide; and etching the low temperature oxide and the thermal oxide located at the bottom of the trench and etching a portion of the low temperature oxide from the substrate surface, wherein sufficient oxide is left at the trench opening and over the substrate to prevent spurious epitaxial growth.
Claim 5
Independent Claim
175 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a semiconductor substrate having a surface; providing an oxide mask on the surface of the substrate, wherein the mask has at least one opening therein; etching the substrate through the mask opening to form a trench having a depth of at least approximately 10 microns from the surface of the substrate; depositing a low temperature oxide such that cusping at the top of the trench reduces the deposition of the low temperature oxide in the trench thereby depositing a thicker amount on the surface of the oxide mask than on the trench sidewalls; growing a thermal oxide layer under the low temperature oxide layer to densify and to level out the low temperature oxide; and etching the low temperature oxide and the thermal oxide located at the bottom of the trench and etching a portion of the low temperature oxide from the substrate surface, wherein sufficient oxide is left at the trench opening and over the substrate to prevent spurious epitaxial growth.
Claim 6
Independent Claim
114 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a trench of at least 10 microns in depth in a semiconductor substrate, formed by etching the substrate through an oxide mask opening; depositing a first oxide layer so that the first oxide layer is thicker on the mask oxide than on the trench sidewalls; growing a second oxide layer to densify and to level out the first oxide layer; and removing a portion of the first oxide layer from the substrate surface and removing the first and second oxide layers at the bottom of the trench to provide for a seed for growing a selective semiconductor layer in the trench.
Claim 7
Independent Claim
114 words
A method of fabricating a trench isolation structure, comprising the steps of: providing a trench of at least 10 microns in depth in a semiconductor substrate, formed by etching the substrate through an oxide mask opening; depositing a first oxide layer so that the first oxide layer is thicker on the mask oxide than on the trench sidewalls; growing a second oxide layer to densify and to level out the first oxide layer; and removing a portion of the first oxide layer from the substrate surface and removing the first and second oxide layers at the bottom of the trench to provide for a seed for growing a selective semiconductor layer in the trench.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-12 | 1993-08-14 | 1994-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-12 | 1997-08-14 | 1998-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-12 | 2001-08-14 | 2002-02-13 | $7700.00 | Window Closed / Lapsed |