US4900372A
Expired / Lapsed
US
⏱️ 0.0 years remaining
III-V on Si heterostructure using a thermal strain layer
Assignee: Kopin Corp
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Filing: 1989-03-02
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Granted: 1990-02-13
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Expires: 2009-03-02
Abstract
Abstract A method for producing wafers having deposited layers of III-V materials on Si or Ge/Si substrates is disclosed. The method involves the use of multiple in situ and ex situ annealing steps and the formation of a thermal strain layer to produce wafers having a decreased incidence of defects and a balanced thermal strain. The wafers produced thereby are also disclosed.
Inventors
- 👤 Jhang W. Lee
- 👤 Richard E. McCullough
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3438; H10P14/3441; H10P14/24; H10P14/29; H10P14/2901; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3402; H10P14/3414; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/097; Y10S438/00; Y10S438/933; Y10S438/938
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
113 words
An article having multiple layers of III-V material produced by the process comprising: a. providing a substrate upon which III-V material layers are to be deposited; b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber; c. growing a first III-V film upon the nucleation layer in the growth chamber; d. annealing the first III-V film; e. growing a second III-V film upon the first III-V film; f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300° and 750° C.; and g. growing a third III-V film upon the second III-V film to form a layered substrate.
Claim 2
Dependent Claim
113 words
An article having multiple layers of III-V material produced by the process comprising: a. providing a substrate upon which III-V material layers are to be deposited; b. forming a III-V nucleation layer upon the substrate via organometallic chemical vapor deposition in a growth chamber; c. growing a first III-V film upon the nucleation layer in the growth chamber; d. annealing the first III-V film; e. growing a second III-V film upon the first III-V film; f. continuing the deposition of the second III-V film while simultaneously, repeatedly cycling the temperature between about 300° and 750° C.; and g. growing a third III-V film upon the second III-V film to form a layered substrate.
Claim 3
Dependent Claim
23 words
An article as in claim 1 having multiple layers of III-V material produced by a process utilizing both in-situ and ex-situ annealing steps.
Claim 4
Dependent Claim
26 words
An article as in claim 2 further being produced by a process utilizing thermal cycling steps to produce stress balancing between the layers of the article.
Claim 5
Dependent Claim
46 words
A wafer comprising: a. a substrate; b. a nucleation layer comprising a III-V material; c. a first buffer layer comprising a III-V material; d. a second buffer layer comprising a III-V material; e. a thermal strain layer comprising a III-V material; and f. a device layer.
Claim 6
Dependent Claim
46 words
A wafer comprising: a. a substrate; b. a nucleation layer comprising a III-V material; c. a first buffer layer comprising a III-V material; d. a second buffer layer comprising a III-V material; e. a thermal strain layer comprising a III-V material; and f. a device layer.
Claim 7
Dependent Claim
19 words
A wafer as in claim 4 wherein the substrate is selected from the group consisting of Si and Ge/Si.
Claim 8
Dependent Claim
22 words
A wafer as in claim 4 wherein the nucleation layer is selected from the group consisting of GaAs, AlGaAs, InGaAs and InP.
Claim 9
Dependent Claim
23 words
A wafer as in claim 4 wherein the first buffer layer is selected from the group consisting of GaAs, AlGaAs, InGaAs and InP.
Claim 10
Dependent Claim
23 words
A wafer as in claim 4 wherein the second buffer layer is selected from the group consisting of GaAs, AlGaAs, InGaAs and InP.
Claim 11
Dependent Claim
23 words
A wafer as in claim 4 wherein the thermal strain layer is selected from the group consisting of GaAs, AlGaAs, InGaAs and InP.
Claim 12
Dependent Claim
22 words
A wafer as in claim 4 wherein the device layer is selected from the group consisting of GaAs, AlGaAs, InGaAs and InP.
Claim 13
Dependent Claim
15 words
A wafer as in claim 4 wherein the first buffer layer contains a dopant material.
Claim 14
Dependent Claim
21 words
A wafer as in claim 11 wherein the dopant material is selected from the group consisting of Zn, Si and S.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-12 | 1993-08-14 | 1994-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-12 | 1997-08-14 | 1998-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-12 | 2001-08-14 | 2002-02-13 | $7700.00 | Window Closed / Lapsed |