Method for preparing semiconductor wafers

Claim 1

The process of preparing semiconductor wafers from ingots by bonding said ingots to a cutting beam with an epoxy adhesive and slicing the ingot into wafers, said process comprising the steps of: a. mixing hollow microspheres of an average diameter of 1 to 500 micrometers as the single additive that prevents or ameliorates thermally induced stress and the clogging problem during slicing with the resin part of an epoxy adhesive, wherein sufficient hollow microspheres are used to provide 2 to 35% (wt/wt) of the total adhesive, wherein the hollow microspheres are formed from silicate glass melts or from a homogeneous solution of alkali metal silicate and a polysalt selected from the group consisting of ammonium pentaborate, sodium pentaborate and sodium hexametaphosphate; b. mixing a sufficient amount of a hardener for the epoxy adhesive with the mixture of step a. to provide a set time of 4 to 12 hours; c. spreading the mixed adhesive system on said cutting beam and/or semiconductor liquid; d. placing said cutting beam and silicon ingot in contact with each other; e. allowing the adhesive to set; f. slicing the ingot into wafers with an inside diameter diamond or wire saw that penetrates the ingot, adhesive and part of the cutting beam; and g. recovering the wafers by breaking the adhesive bond between the semiconductor wafer and the cutting means.