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US4895789A
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Method of manufacturing non-linear resistive element array
Assignee: Seiko Instruments Inc
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Filing: 1988-03-29
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Granted: 1990-01-23
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Expires: 2008-03-29
Abstract
Abstract A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; and forming the non-linear resistive layer in a desired pattern using the resist layer as a mask.
Inventors
- 👤 Shunichi Motte
- 👤 Mitsuya Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:36
CPC Classifications
H; H05; H05K; H05K1/00; H05K1/16; H05K1/167; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1365; H01; H01C; H01C17/00; H01C17/003; H05K2201/00; H05K2201/03; H05K2201/0302; H05K2201/0317; H05K2201/09; H05K2201/09209; H05K2201/09654; H05K2201/09763; H05K2203/00; H05K2203/03; H05K2203/0361; H05K2203/11; H05K2203/1105; H05K3/00; H05K3/02; H05K3/06; H05K3/061; H05K3/064; H05K3/38; H05K3/388
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
114 words
A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; the first depositing a non-linear resistive layer on conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by photo-etching using a patterned resist layer; heat-treating the patterned resist layer on the patterned second conductive layer to extend the resist layer to cover the outer sides of the end portions of the second conductive layer; and forming the non-linear resistive layer in a desired pattern using the heat-treated resist layer as a mask.
Claim 2
Independent Claim
114 words
A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; the first depositing a non-linear resistive layer on conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by photo-etching using a patterned resist layer; heat-treating the patterned resist layer on the patterned second conductive layer to extend the resist layer to cover the outer sides of the end portions of the second conductive layer; and forming the non-linear resistive layer in a desired pattern using the heat-treated resist layer as a mask.
Claim 3
Dependent Claim
35 words
A method as claimed in claim 1; wherein the non-linear resistive layer is made essentially of a non-stoichiometric compound of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, germanium oxide, germanium nitride or germanium carbide.
Claim 4
Dependent Claim
27 words
A method as claimed in claim 2; wherein the non-stoichiometric compound have a larger silicon content or a larger germanium content than that of the stoichiometric ratio.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1; wherein the non-linear resistive layer is made essentially of Ta 2 O 5 .
Claim 6
Dependent Claim
27 words
A method as claimed in claim 1; wherein the non-linear resistive layer is formed by one selected from the group consisting of plasma CVD, CVD or sputtering.
Claim 7
Dependent Claim
32 words
A method as claimed in claim 1; wherein the first conductive layer is made essentially of one selected from the group consisting of ITO, SnO 2 or In 2 O 3 .
Claim 8
Dependent Claim
33 words
A method as claimed in claim 1; wherein the second conductive layer is made essentially of one selected from the group consisting of Cr, Al, Au-Cr alloy, Mo, Ta, Ni-Cr alloy or ITO.
Claim 9
Dependent Claim
19 words
A method as claimed in claim 1; wherein the resist layer is made essentially of positive type resist material.
Claim 10
Dependent Claim
19 words
A method as claimed in claim 1; wherein the resist layer is made essentially of negative type resist material.
Claim 11
Dependent Claim
24 words
A method as claimed in claim 1; wherein the temperature of the heat treatment is within the range of 120° C. to 220° C.
Claim 12
Independent Claim
105 words
A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; forming the non-linear resistive layer in a desired pattern using the resist layer as a mask; and etching the second conductive layer so that the second conductive layer becomes smaller than the non-linear resistive layer.
Claim 13
Independent Claim
105 words
A method for manufacturing a non-linear resistive element array on a substrate, comprising: depositing a first conductive layer on the substrate and selectively forming the layer in a desired pattern; depositing a non-linear resistive layer on the first conductive layer; depositing a second conductive layer on the non-linear resistive layer; forming the second conductive layer in a desired pattern by etching process using a patterned resist layer as a mask; forming the non-linear resistive layer in a desired pattern using the resist layer as a mask; and etching the second conductive layer so that the second conductive layer becomes smaller than the non-linear resistive layer.
Claim 14
Dependent Claim
35 words
A method as claimed in claim 11; wherein the non-linear resistive layer is made essentially of a non-stoichiometric compound of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, germanium oxide, germanium nitride or germanium carbide.
Claim 15
Dependent Claim
27 words
A method as claimed in claim 12; wherein the non-stoichiometric compound have a larger silicon content or a larger germanium content than that of the stoichiometric ratio.
Claim 16
Dependent Claim
21 words
A method as claimed in claim 11; wherein the non-linear resistive layer is made essentially of Ta 2 O 5 .
Claim 17
Dependent Claim
27 words
A method as claimed in claim 11; wherein the non-linear resistive layer is formed by one selected from the group consisting of plasma CVD, CVD or sputtering.
Claim 18
Dependent Claim
32 words
A method as claimed in claim 11; wherein the first conductive layer is made essentially of one selected from the group consisting of ITO, SnO 2 or In 2 O 3 .
Claim 19
Dependent Claim
33 words
A method as claimed in claim 11; wherein the second conductive layer is made essentially of one selected from the group consisting of Cr, Al, Au-Cr alloy, Mo, Ta, Ni-Cr alloy or ITO.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-01-22 | 1993-07-24 | 1994-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-01-22 | 1997-07-24 | 1998-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-01-22 | 2001-07-24 | 2002-01-23 | $7700.00 | Window Closed / Lapsed |