Surface emitting laser

Claim 2

In a surface emitting laser, the improvement comprising: (a) an active region formed in a semiconductor body extending longitudinally in a plane to a light emitting edge at the end of said region; (b) a smooth light reflective surface in said body opposite said edge for redirecting light emitted from said edge in a direction normal to said active region; (c) a lens formed in said body in the path of said redirected light for collimating said light.

Claim 3

The laser of claim 1 wherein the semiconductor body is formed of III-V material.

Claim 4

The laser of claim 1 wherein a partly light reflective surface is formed in said body in the path of said redirected light.

Claim 5

The laser of claim 1 wherein the partly light reflective surface comprises an air gap formed in said body in the path of said redirected light.

Claim 6

The laser of claim 4 wherein the lens is formed on said body on a side of said air gap furthest removed from said light reflective surface.

Claim 7

In a semiconductor laser device having a thin planar active region contained in a semiconductor material wherein light is emitted from an edge of said region in a plane parallel to the plane of the region; the improvement comprising a partly light transmissive smooth surface formed adjacent said edge and perpendicular to the plane of said region and a light reflective surface formed opposite to and spaced apart from said light transmissive surface for reflecting light emitted from said edge in a direction substantially perpendicular to said plane.

Claim 8

In a semiconductor laser device having a thin planar active region contained in a semiconductor material wherein light is emitted from an edge of said region in a plane parallel to the plane of the region; the improvement comprising a partly light transmissive smooth surface formed adjacent said edge and perpendicular to the plane of said region and a light reflective surface formed opposite to and spaced apart from said light transmissive surface for reflecting light emitted from said edge in a direction substantially perpendicular to said plane.

Claim 9

The device of claim 6 wherein the light reflective surface is in the form of a 45° inclined plane.

Claim 10

The device of claim 6 wherein the light reflective surface forms a three dimensional parabaloid.

Claim 11

The device of claim 6 wherein the transmissive smooth surface is separated from the reflective smooth surface by an air gap.

Claim 12

The device of claim 6 wherein the device is formed on a substrate and the light is reflected in a direction away from the substrate.

Claim 13

In a surface emitting laser, the improvement comprising: a 45° light reflective surface opposite a light emitting edge of a planar region of a semiconductor monolithic body and a partly light transmissive surface formed in said body in a plane parallel to said region by an air gap in said body.

Claim 14

In a surface emitting laser, the improvement comprising: a 45° light reflective surface opposite a light emitting edge of a planar region of a semiconductor monolithic body and a partly light transmissive surface formed in said body in a plane parallel to said region by an air gap in said body.

Claim 15

The laser of claim 11 including a lens adjacent said partly light transmissive surface for collimating light transmitted through said transmissive surface.

Claim 16

The laser of claim 12 wherein the lens and laser are formed on said monolithic body.

Claim 17

The laser of claim 12 wherein the lens is formed on a separate substrate and bonded to the body.

Claim 18

In a semiconductor laser of refractive index waveguide type having a substrate; and a light waveguide passage formed of a first cladding layer formed on said substrate, an active layer formed on said first cladding layer, and a second cladding layer formed on said active layer wherein the improvement comprises: (a) a reflection surface formed adjacent and parallel to said first cladding layer; and (b) a resonator including reflection portions formed by terminating both ends of said light waveguide passage at an angle of from 40 to 50 degrees with respect to the plane of said substrate, and said reflection surface.

Claim 19

In a semiconductor laser of refractive index waveguide type having a substrate; and a light waveguide passage formed of a first cladding layer formed on said substrate, an active layer formed on said first cladding layer, and a second cladding layer formed on said active layer wherein the improvement comprises: (a) a reflection surface formed adjacent and parallel to said first cladding layer; and (b) a resonator including reflection portions formed by terminating both ends of said light waveguide passage at an angle of from 40 to 50 degrees with respect to the plane of said substrate, and said reflection surface.

Claim 20

A semiconductor laser of refractive index waveguide type, comprising: (a) a substrate; (b) a first reflection surface formed over said substrate in adjacent parallel relationship thereto; (c) a first cladding layer formed over said substrate; (d) an active layer formed on said first cladding layer, said active layer covering an upper surface of said first cladding layer; (e) a second cladding layer formed on said active layer to interpose said active layer between said first and second cladding layers; said first and second cladding layers and said active layer being formed at their both side ends at an angle of from 40 to 50 degrees with respect to the plane of said substrate to form first and second slopes so that a cross-section of these three layers has a trapezoidal shape such that a lower surface of said first cladding layer is larger than an upper surface of said cladding layer; (f) second and third reflecting layers respectively formed on said first and second slopes; said active layer and said first surface, and second and third reflection layers forming a resonator for oscillating said layer; (g) first and second electrodes coupled to said first cladding layer and second cladding layer for energizing said laser.

Claim 21

A semiconductor laser of refractive index waveguide type, comprising: (a) a substrate; (b) a first reflection surface formed over said substrate in adjacent parallel relationship thereto; (c) a first cladding layer formed over said substrate; (d) an active layer formed on said first cladding layer, said active layer covering an upper surface of said first cladding layer; (e) a second cladding layer formed on said active layer to interpose said active layer between said first and second cladding layers; said first and second cladding layers and said active layer being formed at their both side ends at an angle of from 40 to 50 degrees with respect to the plane of said substrate to form first and second slopes so that a cross-section of these three layers has a trapezoidal shape such that a lower surface of said first cladding layer is larger than an upper surface of said cladding layer; (f) second and third reflecting layers respectively formed on said first and second slopes; said active layer and said first surface, and second and third reflection layers forming a resonator for oscillating said layer; (g) first and second electrodes coupled to said first cladding layer and second cladding layer for energizing said laser.