Fiber optic tap

Claim 2

A passive optical tap for a single-mode optical fiber for optically transferring optical information from a source optically connected to said fiber to a light detector which comprises: means for inducing cladding modes within the fiber; detector means for converting light into an electrical signal; means for optically coupling the fiber to said detector means to couple energy from the induced cladding modes to the detector means, wherein the means for optically coupling comprises notch means formed in the fiber.

Claim 3

A passive optical tap as defined in claim 1, wherein the means for optically coupling comprises a reduced diametrical notch formed in the fiber.

Claim 4

A passive optical tap as defined in claim 2, wherein the notch is circularly symmetrical.

Claim 5

A passive optical tap as defined in claim 2, wherein the means for inducing cladding modes comprises a microbender.

Claim 6

A passive optical tap as defined in claim 2, wherein the microbender comprises a mode-scrambler which induces cladding modes and causes redistribution of the cladding modes into a steady state modal distribution.

Claim 7

A passive optical tap as defined in claim 1, wherein the detector means for converting light comprises an integrated photodetector.

Claim 8

A passive optical tap as defined in claim 6, wherein the detector means for converting light comprises a p-n junction detector.

Claim 9

A passive optical tap as defined in claim 2, including a semiconductor wafer having a cavity etched from one surface of the wafer to another surface of the wafer, and wherein said fiber is received to pass through said cavity.

Claim 10

A passive optical tap as defined in claim 8, wherein the semiconductor wafer is a silicon wafer and the electroconductive metal is aluminum.

Claim 11

A passive optical tap as defined in claim 8, wherein an electroductive metal is deposited on the surface of the wafer around the opening of the cavity.

Claim 12

A passive optical tap as defined in claim 10, wherein the semiconductive wafer is gallium arsenide, and the electroconductive metal is gold germanium.

Claim 13

A passive optical tap as defined in claim 2, wherein the cladding of the fiber is chemically etched away to form the notch.

Claim 14

A passive optical tap as defined in claim 1, wherein the fiber has a glass core diameter of about 4 um and an outside (cladding) diameter of about 80 um.

Claim 15

A passive optical tap as defined in claim 2, wherein the fiber has a glass core diameter of about 4 um and an outside (cladding) diameter of about 80 um and a notch depth of about 20 um.

Claim 16

A passive optical tap as defined in claim 4, wherein the microbender includes means for adjusting the extent of microbend in the fiber.

Claim 17

A passive optical tap as defined in claim 8, wherein the detector means comprises a p-n junction detector formed on the inside surface of the cavity.

Claim 18

A passive optical tap for a single-mode optical fiber for optically transferring optical information from a source optically connected to said fiber to a light detector, which comprises: a semiconductor wafer having a cavity etched from one surface of the wafer to another surface of the wafer; detector means for converting light into an electrical signal, comprising a p-n junction detector on the inside surface of the cavity, and wherein an electroconductive metal is deposited on the opening of the cavity in electrical contact with the p-n junction; microbender means for inducing cladding modes within the fiber; optical coupling means for optically coupling the fiber to said detector means to couple energy from the induced cladding modes to the detector means, said optical coupling means comprising a reduced diametrical notch formed in the fiber said fiber notch being located in said wafer cavity.

Claim 19

A passive optical tap for a single-mode optical fiber for optically transferring optical information from a source optically connected to said fiber to a light detector, which comprises: a semiconductor wafer having a cavity etched from one surface of the wafer to another surface of the wafer; detector means for converting light into an electrical signal, comprising a p-n junction detector on the inside surface of the cavity, and wherein an electroconductive metal is deposited on the opening of the cavity in electrical contact with the p-n junction; microbender means for inducing cladding modes within the fiber; optical coupling means for optically coupling the fiber to said detector means to couple energy from the induced cladding modes to the detector means, said optical coupling means comprising a reduced diametrical notch formed in the fiber said fiber notch being located in said wafer cavity.