US4885622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pin photodiode and method of fabrication of the same
Assignee: Oki Electric Industry Co Ltd
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Filing: 1988-06-06
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Granted: 1989-12-05
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Expires: 2008-06-06
Abstract
Abstract A PIN photodiode is composed of a lower electrode deposited on a substrate, a photoelectric transducer of PIN construction deposited on the lower electrode, and an upper electrode deposited on the photoelectric transducer. A method of fabricating the PIN photodiode is also disclosed. All of electron-and-hole pairs generated in the photoelectric transducer in response to application of light are biased by the lower and upper electrodes. These electron-and-hole pairs are quickly picked up as a current between the electrodes for detecting the light falling on the PIN photodiode.
Inventors
- 👤 Akira Uchiyama
- 👤 Yuuichi Masaki
- 👤 Toshiyuki Iwabuchi
- 👤 Tsutomu Nomoto
- 👤 Masaaki Sakamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 21:51
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
237 words
A PIN photodiode comprising; (a) a substrate formed of a radiation-transmissive material; (b) a lower electrode conductive layer of a radiation-transmissive material deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity-type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering at least a portion of a surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
Claim 2
Dependent Claim
237 words
A PIN photodiode comprising; (a) a substrate formed of a radiation-transmissive material; (b) a lower electrode conductive layer of a radiation-transmissive material deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity-type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering at least a portion of a surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
Claim 3
Dependent Claim
240 words
A PIN photodiode comprising; (a) a substrate; (b) a lower electrode conductive layer deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type amorphous semiconductor deposited on a portion of one surface of said intermediate layer a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer of a radiation-transmissive material deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering at least a portion of a surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
Claim 4
Dependent Claim
240 words
A PIN photodiode comprising; (a) a substrate; (b) a lower electrode conductive layer deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type amorphous semiconductor deposited on a portion of one surface of said intermediate layer a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer of a radiation-transmissive material deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering at least a portion of a surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
Claim 5
Dependent Claim
223 words
A PIN photodiode comprising: (a) a substrate formed of a radiation-transmissive material; (b) a lower electrode conductive layer of a radiation-transmissive material deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity-type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering an entire surface of said upper electrode conductive layer.
Claim 6
Dependent Claim
223 words
A PIN photodiode comprising: (a) a substrate formed of a radiation-transmissive material; (b) a lower electrode conductive layer of a radiation-transmissive material deposited on one surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of one surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to a surface thereof facing said first conductivity-type layer such that opposed lateral edges of said second conductivity-type layer are located inwardly of opposed lateral edges of said intermediate layer; (f) an upper electrode conductive layer deposited on all of a surface of said second conductivity-type layer opposite to a surface thereof facing said intermediate layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering an entire surface of said upper electrode conductive layer.
Claim 7
Dependent Claim
217 words
A PIN photodiode comprising; (a) a substrate; (b) a lower electrode conductive layer deposited on surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of a surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to the surface thereof facing said first conductivity-type layer such that opposed lateral edges of such second conductivity-type layer are located inwardly of opposed lateral edges of such intermediate (f) an upper electrode conductive layer of a radiation-transmissive material deposited on all of a surface of said second conductivity-type layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering an entire surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
Claim 8
Dependent Claim
217 words
A PIN photodiode comprising; (a) a substrate; (b) a lower electrode conductive layer deposited on surface of said substrate; (c) a first conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said lower electrode conductive layer opposite to a surface thereof facing said substrate; (d) an intermediate layer of intrinsic amorphous semiconductor deposited on all of a surface of said first conductivity-type layer opposite to a surface thereof facing said lower electrode conductive layer; (e) a second conductivity-type layer of amorphous semiconductor deposited on a portion of one surface of said intermediate layer opposite to the surface thereof facing said first conductivity-type layer such that opposed lateral edges of such second conductivity-type layer are located inwardly of opposed lateral edges of such intermediate (f) an upper electrode conductive layer of a radiation-transmissive material deposited on all of a surface of said second conductivity-type layer, said second conductivity-type layer and said upper electrode conductive layer being separated into a plurality of sections by insulative regions which extend into said intermediate layer thereby dividing said second conductivity-type layer and said upper electrode conductive layer into said plurality of sections; and (g) an insulative protective film covering an entire surface of said upper electrode conductive layer opposite to a surface thereof facing said second conductivity-type layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-04 | 1993-06-05 | 1993-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-04 | 1997-06-05 | 1997-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-04 | 2001-06-05 | 2001-12-05 | $7700.00 | Window Closed / Lapsed |