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US4881110A Expired / Lapsed US ⏱️ 0.0 years remaining

Double-Schottky diode liquid crystal light valve

Assignee: Victor Company of Japan Ltd
•
Filing: 1988-05-16
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Granted: 1989-11-14
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Expires: 2008-05-16
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Abstract

Abstract A double Schottky diode light valve (5) includes a liquid crystal (80) for locally modulating a beam (120) by polarization rotation to produce a modulated beam (121), and a photoconductor (40) located adjacent the liquid crystal (80) for receiving and absorbing a second beam (110). The photoconductor (40) controls the polarization responsively to the optical content of the second beam (110). The photoconductor (46) includes a semiconductor substrate and a pair of Schottky diodes (60/40, 30/40) disposed on opposing sides of the substrate. The absorption of the second beam (110) by the substrate (40) produces photogenerated carriers. The pair of Schottky diodes (60/40, 30/40) maintain the substrate (40) substantially depleted of such carriers and also reflects the modulated beam back through the liquid crystal.

Inventors

  • 👤 Paul O. Braatz
  • 👤 Uzi Efron

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 20:02
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/135; G02F1/1354; G02F1/015

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 106 words
A photosubstrate for use in light valve devices comprising: semiconductor substrate means for absorbing an incident beam of radiation, said absorption producing photogenerated carriers; first and second Schottky diode means, alternately reverse-biased, disposed on opposing sides of said substrate means for maintaining said substrate substantially depleted of said carriers, at least one of said Schottky diode means having a plurality of metal islands in a matrix pattern, wherein said second Schottky diode means comprises a plurality of metal islands with insulating channels therebetween oriented to reflect a readout beam of radiation whereby diodes are formed by the interface of asid metal islands and said substrate means.
Claim 2
Dependent Claim 106 words
A photosubstrate for use in light valve devices comprising: semiconductor substrate means for absorbing an incident beam of radiation, said absorption producing photogenerated carriers; first and second Schottky diode means, alternately reverse-biased, disposed on opposing sides of said substrate means for maintaining said substrate substantially depleted of said carriers, at least one of said Schottky diode means having a plurality of metal islands in a matrix pattern, wherein said second Schottky diode means comprises a plurality of metal islands with insulating channels therebetween oriented to reflect a readout beam of radiation whereby diodes are formed by the interface of asid metal islands and said substrate means.
Claim 3
Dependent Claim 28 words
A photosubstrate as defined in claim 1, wherein said substrate means comprises a substrate material chosen from the group of silicon, gallium arsenide, indium arsenide, or indium phosphide.
Claim 4
Dependent Claim 25 words
A photosubstrate as defined in claim 1, wherein said metal comprises a metal chosen from the group of indium tin oxide, aluminum, platinum and gold.
Claim 5
Dependent Claim 63 words
A photosubstrate as defined in claim 1, wherein said first Schottky diode means comprises a plurality of metal-semiconductor diodes disposed on a first side of said substrate means in optical communication with said incident beam, said diodes including a grid of metal disposed immediately adjacent said substrate means, whereby said diodes are formed by the interface of said grid and said substrate means.
Claim 6
Dependent Claim 19 words
A photosubstrate as defined in claim 4, wherein said metallic grid comprises a silicide of platinum and silicon material.
Claim 7
Dependent Claim 17 words
A photosubstrate as defined in claim 4, wherein said metallic grid comprises indium tin oxide or platinum.

References Cited (Backward Citations)

US2669635A Cited
US3053926A Cited
JPS4527940Y1 Cited
US4005468A Cited
FR2227547A1 Cited
US3968272A Cited
US4056642A Cited
US4206979A Cited
US4228449A Cited
US4239348A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-11-13 1993-05-15 1993-11-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-11-13 1997-05-15 1997-11-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-11-13 2001-05-15 2001-11-14 $7700.00 Window Closed / Lapsed

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