Anti-parallel capacitor

Claim 2

A capacitor having a low voltage coefficient comprising: a first capacitor having a first contact, a second contact and a polarity therebetween; a second capacitor having a first contact, a second contact and a like polarity therebetween; and wherein said first contact of said first capacitor is connected to said second contact of said second capacitor and said second contact of said first capacitor is connected to the first contact of the second capacitor.

Claim 3

A low voltage coefficient capacitor as defined in claim 1 wherein each of said first and second capacitors has a first and a second conductor plate deposited on a silicon substrat with a dielectric layer deposited between said conductor plates.

Claim 4

The capacitor as defined in claim 2 wherein said first conductor plate of each of said first and second capacitors is a polysilicon layer and said second conductor plate of each capacitor is a metal layer.

Claim 5

The capacitor as defined in claim 3 wherein the capacitance of each of said first and second capacitors varies in a substantially lineara fashion as the voltage being applied across said first and second capacitors changes.

Claim 6

The capacitor of claim 4 wherein the voltage coefficient of said capacitor is substantially constant in a range between -30 ppm and +12 ppm as the voltage being applied across said first and second capacitors varies between ±20 V.

Claim 7

A low voltage coefficient capacitor as defined in claim 1 wherein each of said first and second capacitors has a series of layers sequentially deposited on a silicon substrate with a silicon dioxide layer being first deposited thereon, followed by the deposition of a heavily doped polysilicon layer, followed by the deposition of a dielectric layer and then a metal layer.

Claim 8

The capacitor as defined in claim 6 wherein the capacitance of each of said first and second capacitors varies linearly as the voltage being applied across said first and second capacitors changes.

Claim 9

A capacitor having a low voltage coefficient comprising: a first and a second capacitor each having a series of layers sequentially deposited on a silicon substrate with a silicon dioxide layer being first deposited on said substrate, followed by the deposition of a first conductor layer, followed by the deposition of an insulator layer and than a second conductor layer; said first capacitor further has a first contact, a second contact and a like polarity therebetween; and wherein said first contact of said first capacitor is connected to said second contact of said second capacitor and said second contact of said first capacitor is connected to said first contact of said second capacitor.

Claim 10

A capacitor having a low voltage coefficient comprising: a first and a second capacitor each having a series of layers sequentially deposited on a silicon substrate with a silicon dioxide layer being first deposited on said substrate, followed by the deposition of a first conductor layer, followed by the deposition of an insulator layer and than a second conductor layer; said first capacitor further has a first contact, a second contact and a like polarity therebetween; and wherein said first contact of said first capacitor is connected to said second contact of said second capacitor and said second contact of said first capacitor is connected to said first contact of said second capacitor.

Claim 11

The capacitor as defined in claim 8 wherein said first conductor plate of each of said first and second capacitors is polysilicon and the second conductor plate of each of said first and second capacitors is alumina silicon.

Claim 12

The capacitor as defined in claim 8 wherein the capacitance of each of said first and second capacitors varies in a substantially linear fashion as the voltage being applied across said first and second capacitors is varied.

Claim 13

The capacitor of claim 8 wherein the voltage coefficient of said capacitor is substantially constant in a range between -30 ppm and +12 ppm as the voltage being applied to said first and second capacitors varies between ±20 V.