US4872607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of bonding semiconductor material to an aluminum foil
Assignee: Spheral Solar Power Inc
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Filing: 1988-09-26
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Granted: 1989-10-10
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Expires: 2008-09-26
Abstract
Abstract The disclosure relates to a method of bonding semiconductor material to aluminum foil to provide electrical connection therebetween wherein the foil and/or the semiconductor material may have an oxide coating thereon. The method comprises heating the foil to a temperature in the range of from about 500° C. to about 577° C. and then moving the semiconductor into said foil under impact to expose elemental aluminum and semiconductor material at the point of impact and form a bond therebetween at the point of impact.
Inventors
- 👤 Millard J. Jensen
- 👤 Jules D. Levine
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:41
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/137; H02; H02S; H02S40/00; H02S40/30; H02S40/36; H10F19/00; H10F19/90; H10F19/902; H10F19/904; H10F71/121; H10F77/00; H10F77/10; H10F77/14; H10F77/147; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
86 words
A method of bonding a semiconductor material to an aluminum foil, comprising the steps of: (a) providing an aluminum foil having discrete spaced apertures therein, (b) placing spherically shaped semiconductor material adjacent said apertures, (c) heating said foil and said material in the range of from about 500° C. to about 577° C., and (d) moving said material into said apertures under force shearingly to move said material whereby native oxides on the surface of said foil are sheared to expose the underlying aluminum for bonding.
Claim 2
Independent Claim
86 words
A method of bonding a semiconductor material to an aluminum foil, comprising the steps of: (a) providing an aluminum foil having discrete spaced apertures therein, (b) placing spherically shaped semiconductor material adjacent said apertures, (c) heating said foil and said material in the range of from about 500° C. to about 577° C., and (d) moving said material into said apertures under force shearingly to move said material whereby native oxides on the surface of said foil are sheared to expose the underlying aluminum for bonding.
Claim 3
Dependent Claim
15 words
A method as set forth in claim 1 wherein step (d) comprises movement under impact.
Claim 4
Dependent Claim
24 words
A method as set forth in claim 1 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
Claim 5
Dependent Claim
24 words
A method as set forth in claim 2 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
Claim 6
Independent Claim
44 words
A method of bonding a semiconductor material to an aluminum foil, comprising the steps of: (a) providing an aluminum foil having discrete spaced apertures therein, (b) placing shaped semiconductor material in said apertures, and (c) bonding said foil to said material in said apertures.
Claim 7
Independent Claim
44 words
A method of bonding a semiconductor material to an aluminum foil, comprising the steps of: (a) providing an aluminum foil having discrete spaced apertures therein, (b) placing shaped semiconductor material in said apertures, and (c) bonding said foil to said material in said apertures.
Claim 8
Dependent Claim
32 words
A method as set forth in claim 5 wherein step (b) comprises moving said material into said apertures under impact to expose elemental aluminum and semiconductor material at the points of impact.
Claim 9
Dependent Claim
39 words
A method as set forth in claim 5 further including, prior to step (b), heating said foil and said material to a temperature in the range of from about 500° C. to about 577° C. to soften said foil.
Claim 10
Dependent Claim
39 words
A method as set forth in claim 6 further including, prior to step (b), heating said foil and said material to a temperature in the range of from about 500° C. to about 577° C. to soften said foil.
Claim 11
Dependent Claim
21 words
A method as set forth in claim 7 wherein step (c) includes cooling said material and said foil to ambient temperature.
Claim 12
Dependent Claim
21 words
A method as set forth in claim 8 wherein step (c) includes cooling said material and said foil to ambient temperature.
Claim 13
Dependent Claim
15 words
A method as set forth in claim 7 wherein step (c) includes rehardening said foil.
Claim 14
Dependent Claim
15 words
A method as set forth in claim 8 wherein step (c) includes rehardening said foil.
Claim 15
Independent Claim
78 words
A method of bonding a semiconductor material to aluminum, comprising the steps of: (a) providing an aluminum member, (b) placing semiconductor material adjacent said aluminum member, (c) heating said aluminum member and said semiconductor material to a temperature in the range from about 500° C. to about 577° C., and (d) forcing said semiconductor material into said aluminum member under impact to expose elemental aluminum and semiconductor material at the points of impact to form a supporting bond.
Claim 16
Independent Claim
78 words
A method of bonding a semiconductor material to aluminum, comprising the steps of: (a) providing an aluminum member, (b) placing semiconductor material adjacent said aluminum member, (c) heating said aluminum member and said semiconductor material to a temperature in the range from about 500° C. to about 577° C., and (d) forcing said semiconductor material into said aluminum member under impact to expose elemental aluminum and semiconductor material at the points of impact to form a supporting bond.
Claim 17
Dependent Claim
38 words
A method as set forth in claim 13 further including the step of cooling the semiconductor material and aluminum member after step (d) to ambient temperature to form a bond between said aluminum member and said semiconductor material.
Claim 18
Dependent Claim
14 words
A method as set forth in claim 13 wherein the semiconductor material is silicon.
Claim 19
Dependent Claim
14 words
A method as set forth in claim 14 wherein the semiconductor material is silicon.
Claim 20
Dependent Claim
24 words
A method as set forth in claim 5 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
Claim 21
Dependent Claim
24 words
A method as set forth in claim 6 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
Claim 22
Dependent Claim
24 words
A method as set forth in claim 7 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
Claim 23
Dependent Claim
24 words
A method as set forth in claim 8 wherein said semiconductor material is taken from the class consisting of silicon, germanium and gallium arsenide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-10-09 | 1993-04-10 | 1993-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-10-09 | 1997-04-10 | 1997-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-10-09 | 2001-04-10 | 2001-10-10 | $7700.00 | Window Closed / Lapsed |