US4868618A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ion implanted semiconductor device
Assignee: STMicroelectronics NV
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Filing: 1988-03-25
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Granted: 1989-09-19
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Expires: 2008-03-25
Abstract
Abstract A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implanted into the region under the conductive layer. Depending upon the thickness of the region and the concentration of implanted silicon ions, the device can function as an IGFET memory device or a vertical resistor between the conductive layer and the substrate.
Inventors
- 👤 Alexander Kalnitsky
- 👤 Michael I. H. King
- 👤 Robert A. Hadaway
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10B; H10B10/00; H10B10/15; H10B41/00; H10D1/00; H10D1/40; H10D1/47; H10D30/00; H10D30/60; H10D30/69; H10D62/00; H10D62/80; H10D62/83; H10D64/60; H10D64/62; H10D64/66; H10D64/68; H10D64/681
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
78 words
A conductor-dielectric-semiconductor device comprising: a silicon substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having a dielectric gate region overlying the channel region; a conductive gate layer over a portion of the dielectric gate region; and implanted silicon ions in the dielectric gate region, under the region of the conductive gate layer, with the maximum density of the ions being towards but not contiguous the surface of the silicon substrate.
Claim 2
Dependent Claim
78 words
A conductor-dielectric-semiconductor device comprising: a silicon substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having a dielectric gate region overlying the channel region; a conductive gate layer over a portion of the dielectric gate region; and implanted silicon ions in the dielectric gate region, under the region of the conductive gate layer, with the maximum density of the ions being towards but not contiguous the surface of the silicon substrate.
Claim 3
Dependent Claim
102 words
An IGFET memory device comprising: a semiconductor substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having a gate oxide region overlying the channel region; a conductive gate layer over a portion of the gate oxide region; source and drain regions in the channel region; and implanted silicon ions in the gate oxide region, under the region of the conductive gate of between about 0.1 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said gate oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
Claim 4
Dependent Claim
102 words
An IGFET memory device comprising: a semiconductor substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having a gate oxide region overlying the channel region; a conductive gate layer over a portion of the gate oxide region; source and drain regions in the channel region; and implanted silicon ions in the gate oxide region, under the region of the conductive gate of between about 0.1 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said gate oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
Claim 5
Dependent Claim
54 words
A device as defined in claim 2 in which the gate oxide region has a thickness of between about 10 and 50 nm and the maximum density of the implanted ions in the silicon dioxide is at a distance of at least about 3 to 7 nm from said surface of the silicon substrate.
Claim 6
Dependent Claim
40 words
A device as defined in claim 3 in which the distance from the maximum density of the ions to the conductive layer is greater than that from the maximum density of the ions to the surface of the silicon substrate.
Claim 7
Dependent Claim
116 words
An IGFET device comprising: a semiconductor substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having an oxide region overlying the channel region; a first conductive gate layer over a portion of the oxide region; source and drain regions in the channel region contiguous the first conductive gate layer; a second conductive layer over another portion of the oxide region and the drain region; and implanted silicon ions in the oxide region, over the drain region of between about 5.0 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
Claim 8
Dependent Claim
116 words
An IGFET device comprising: a semiconductor substrate having a channel region; an insulating silicon-dioxide layer on a surface of the silicon substrate having an oxide region overlying the channel region; a first conductive gate layer over a portion of the oxide region; source and drain regions in the channel region contiguous the first conductive gate layer; a second conductive layer over another portion of the oxide region and the drain region; and implanted silicon ions in the oxide region, over the drain region of between about 5.0 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
Claim 9
Dependent Claim
111 words
An IGFET device comprising: a semiconductor substrate having a channel region; a first insulating silicon-dioxide layer on a surface of the silicon substrate having an oxide region overlying the channel region; a first conductive gate layer over a portion of the gate oxide region; a second insulating silicon-dioxide layer having an oxide region overlying the first conductive gate layer; implanted silicon ions in the oxide region of the second layer, and over the first conductive gate layer, of between about 5.0 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said gate oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
Claim 10
Dependent Claim
111 words
An IGFET device comprising: a semiconductor substrate having a channel region; a first insulating silicon-dioxide layer on a surface of the silicon substrate having an oxide region overlying the channel region; a first conductive gate layer over a portion of the gate oxide region; a second insulating silicon-dioxide layer having an oxide region overlying the first conductive gate layer; implanted silicon ions in the oxide region of the second layer, and over the first conductive gate layer, of between about 5.0 and 20×10 15 ions/cm 2 forming silicon dioxide traps in said gate oxide region, with the maximum density of the ions being displaced from the surface of the silicon substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-18 | 1993-03-20 | 1993-09-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-18 | 1997-03-20 | 1997-09-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-18 | 2001-03-20 | 2001-09-19 | $7700.00 | Window Closed / Lapsed |