Abstract A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens and having a photosensitivity of not less than 0.1 erg/cm2 at 780 nm, which comprises supplying a gas selected from the group consisting of SiH4, SiF4 and Si2H6 into a discharge space, and subjecting the gas to glow discharge within the discharge space having a gradient discharge intensity. The present invention provides an a-SiH film which has a remarkable high sensitivity in a long wavelength region with maintaining a high photosensitivity in a visible light region, and has a remarkable less defect density, and the process for production of such film in a high deposition rate.
A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens which comprises: supplying a gas selected from the group consisting of SiH 4 , SiF 4 and Si 2 H 6 into a discharge space which is divided into plural parts having different discharge intensities to give a gradient of discharge intensity to that the strongest discharge intensity is present in the part facing a substrate on which the gas is deposited, and subjecting the gas to flow discharge within the discharge space.
Claim 2
Dependent Claim
101 words
A process for production of a hydrogenated amorphous silicon film of a silicon compound containing at least one element selected from the group consisting of hydrogen and halogens which comprises: supplying a gas selected from the group consisting of SiH 4 , SiF 4 and Si 2 H 6 into a discharge space which is divided into plural parts having different discharge intensities to give a gradient of discharge intensity to that the strongest discharge intensity is present in the part facing a substrate on which the gas is deposited, and subjecting the gas to flow discharge within the discharge space.
Claim 3
Dependent Claim
34 words
A process accordng to claim 1, wherein a raw gas is passed from a part of the space having a low discharge intensity into a part of the space having a high discharge intensity.