US4862227A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and its manufacturing method
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1989-01-17
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Granted: 1989-08-29
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Expires: 2009-01-17
Abstract
Abstract The present invention relates to a semiconductor device manufactured by removing a part of a semiconductor layer containing an amorphous semiconductor and which is formed over separate electrodes existing on the same substrate and characterized in that the mean oxygen content of the portion of the semiconductor adjacent the removed portion and 10 μm inward is in a range of 0.5-10 atom %, and to a manufacturing method for the semiconductor device characterized in that the semiconductor layer is removed partly in an oxidative environment by the use of laser ray means. The invention provides semiconductor devices diminished in leak current.
Inventors
- 👤 Kazunori Tsuge
- 👤 Shinji Kuwamura
- 👤 Yoshihisa Tawada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:57
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10F; H10F19/00; H10F19/30; H10F19/31; H10F19/33; H10F71/00; H10F71/10; H10F71/103; H10P50/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S257/00; Y10S257/905
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
97 words
A semiconductor device comprising a substrate, separate electrodes formed on the substrate and a semiconductor layer formed over the electrodes; said semiconductor layer: (1) comprising an amorphous semiconductor material and (2) being obtained by forming a layer comprising an amorphous semiconductor material over the electrodes and thereafter cutting through said layer with a laser scribe in an oxidative environment to form a scribed end face, the semiconductor layer having a mean oxygen content of 0.5-10 atom % in a portion thereof between the scribed end face and a distance 10-50 μm away from the scribed end face.
Claim 2
Dependent Claim
97 words
A semiconductor device comprising a substrate, separate electrodes formed on the substrate and a semiconductor layer formed over the electrodes; said semiconductor layer: (1) comprising an amorphous semiconductor material and (2) being obtained by forming a layer comprising an amorphous semiconductor material over the electrodes and thereafter cutting through said layer with a laser scribe in an oxidative environment to form a scribed end face, the semiconductor layer having a mean oxygen content of 0.5-10 atom % in a portion thereof between the scribed end face and a distance 10-50 μm away from the scribed end face.
Claim 3
Dependent Claim
17 words
The semiconductor device of claim 1 wherein the mean oxygen content is 2.0 to 10 atom %.
Claim 4
Dependent Claim
41 words
The semiconductor device of claim 1 wherein the semiconductor layer has a mean oxygen content of 0.5 to 10 atom % in a portion thereof between the scribed end face and a distance 10 μm away from the scribed end face.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-28 | 1993-02-27 | 1993-08-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-28 | 1997-02-27 | 1997-08-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-28 | 2001-02-27 | 2001-08-29 | $7700.00 | Window Closed / Lapsed |