US4856015A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser array device
Assignee: Sharp Corp
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Filing: 1988-06-07
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Granted: 1989-08-08
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Expires: 2008-06-07
Abstract
Abstract A semiconductor laser array device has a relatively wide light-emitting area with many semiconductor lasers and a shielding layer selectively disposed with respect to peripheral regions of the light-emitting area such that the rate of heat emission from the center part can be increased relative to that from the peripheral regions. Temperature distribution on the light-emitting area can thus be made uniform and laser light can be emitted from the entire laser emitting area under a phase-synchronized condition.
Inventors
- 👤 Sadayoshi Matsui
- 👤 Mototaka Taneya
- 👤 Mitsuhiro Matsumoto
- 👤 Hiroyuki Hosoba
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 03:26
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/024; H01S5/02461; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068; H10; H10W; H10W72/00; H10W72/30
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
58 words
In a semiconductor laser array device having a light-emitting area having thereon a plurality of semiconductor laser channels, the improvement wherein said semiconductor laser array device further comprises temperature compensating means having non-uniform thermal conductivity and disposed near said light-emitting area for making the temperature distribution uniform over said plurality of semiconductor laser channels on said light-emitting area.
Claim 2
Dependent Claim
58 words
In a semiconductor laser array device having a light-emitting area having thereon a plurality of semiconductor laser channels, the improvement wherein said semiconductor laser array device further comprises temperature compensating means having non-uniform thermal conductivity and disposed near said light-emitting area for making the temperature distribution uniform over said plurality of semiconductor laser channels on said light-emitting area.
Claim 3
Dependent Claim
60 words
The semiconductor laser array device of claim 1 wherein said temperature compensating means have relatively smaller thermal conductivity near peripheral regions of said light-emitting area than near central regions of said light-emitting area, thereby serving to effectively reduce heat emission from said peripheral regions of said light-emitting area compared to heat emission from said central regions of said light-emitting area.
Claim 4
Dependent Claim
50 words
The semiconductor laser array device of claim 1 further comprising a heat sink of a thermally conductive material having a contact surface substantially parallel to said light-emitting area and a shielding layer of a thermally less conductive material disposed between said contact surface and peripheral regions of said light-emitting area.
Claim 5
Dependent Claim
18 words
The semiconductor laser array device of claim 3 wherein said shielding layer comprises Al 2 O 3 .
Claim 6
Dependent Claim
50 words
The semiconductor laser array device of claim 2 wherein said temperature compensating means include an indium layer with increased thickness corresponding to said central regions and a SiN 2 layer with thermal conductivity smaller than indium disposed between said indium layer and said light-emitting area corresponding to said peripheral regions.
Claim 7
Dependent Claim
50 words
The semiconductor laser array device of claim 2 wherein said temperature compensating means include an Al 2 O 3 layer corresponding to said peripheral regions and a gold-tin layer with increased thickness corresponding to said central regions and disposed between said Al 2 O 3 layer and said light-emitting area.
Claim 8
Dependent Claim
31 words
The semiconductor laser array device of claim 2 wherein said temperature compensating means include an indium layer having a copper layer embedded therein at an area corresponding to said central regions.
Claim 9
Dependent Claim
57 words
The semiconductor laser array device of claim 2 wherein said temperature compensating means include an indium layer with a reduced thickness at an area corresponding to said central regions, said indium layer being formed on top of a copper heat sink having a protrusion at an central area corresponding to said central regions of said heat-emitting surface.
Claim 10
Dependent Claim
42 words
The semiconductor laser array device of claim 2 wherein said temperature compensating means include a gold-tin layer with reduced thickness near said central regions and a copper layer disposed near said central regions and between said gold-tin layer and said light-emitting surface.
References Cited (Backward Citations)
US4589116A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-07 | 1993-02-06 | 1993-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-07 | 1997-02-06 | 1997-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-07 | 2001-02-06 | 2001-08-08 | $7700.00 | Window Closed / Lapsed |