Abstract A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type which has a charge accumulating region of the second conductivity type laminated on the charge accumulating region, the second conductivity type region and the charge accumulating region forming a charge accumulating section, and a first conductivity type region formed on the surface of and/or on the side of the second conductivity type region, wherein if an excessive signal charge is produced in the charge accumulating section, the excessive signal charge is absorbed in the first conductivity type region, whereby brooming can be satisfactorily suppressed and higher integration of the device can be achieved.
A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type, comprising: (a) a charge accumulating section of the second conductivity type formed on said charge accumulating region, said second conductivity type region and said charge accumulating region, forming a charge accumulating section; and (b) a first conductivity type region formed on the surface of and/or on the side of said second conductivity type region, wherein if an excessive signal charge is produced in said charge accumulating section, said excessive signal charge is absorbed in said first conductivity type region.
Claim 2
Dependent Claim
108 words
A solid state imager device having a charge accumulating region of a second conductivity type formed on the surface side of a semiconductor substrate of a first conductivity type, comprising: (a) a charge accumulating section of the second conductivity type formed on said charge accumulating region, said second conductivity type region and said charge accumulating region, forming a charge accumulating section; and (b) a first conductivity type region formed on the surface of and/or on the side of said second conductivity type region, wherein if an excessive signal charge is produced in said charge accumulating section, said excessive signal charge is absorbed in said first conductivity type region.