US4847844A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Surface-emitting semiconductor laser device
Assignee: Mitsubishi Electric Corp
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Filing: 1988-01-26
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Granted: 1989-07-11
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Expires: 2008-01-26
Abstract
Abstract A surface-emitting semiconductor laser device comprises a first electrode, a first-conductivity-type clad layer provided on the first electrode, an active layer provided on the first-conductivity-type clad layer, a guide layer provided on the active layer and having an even-numbered-order diffraction grating opposite to the active layer, a second-conductivity-type clad layer provided on the guide layer, contact layers provided on portions of the second-conductivity-type clad layer, and second electrodes provided on the contact layers.
Inventors
- 👤 Susumu Noda
- 👤 Keisuke Kojima
- 👤 Kazuo Kyuma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 09:39
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/185; H01S5/187
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
121 words
A surface-emitting semiconductor laser device, comprising: a first electrode (1); a substrate (2) provided on said first electrode (1); a first-conductivity-type clad layer (4) provided over said first electrode; an active layer (5) provided on said first-conductivity-type clad layer; a guide layer (7) provided over said active layer and having an even-numbered order diffraction grating opposite to said active layer; a second-conductivity-type clad layer (9) provided over said diffraction grating in said guide layer and having a laser beam take-out position (19) provided therein; contact layers (10) provided on respective portions of said second-conductivity-type clad layer; and second electrodes (18) provided on respective ones of said contact layers, wherein end faces of said layers and said diffraction grating constitute a resonator.
Claim 2
Dependent Claim
121 words
A surface-emitting semiconductor laser device, comprising: a first electrode (1); a substrate (2) provided on said first electrode (1); a first-conductivity-type clad layer (4) provided over said first electrode; an active layer (5) provided on said first-conductivity-type clad layer; a guide layer (7) provided over said active layer and having an even-numbered order diffraction grating opposite to said active layer; a second-conductivity-type clad layer (9) provided over said diffraction grating in said guide layer and having a laser beam take-out position (19) provided therein; contact layers (10) provided on respective portions of said second-conductivity-type clad layer; and second electrodes (18) provided on respective ones of said contact layers, wherein end faces of said layers and said diffraction grating constitute a resonator.
Claim 3
Dependent Claim
19 words
A surface-emitting semiconductor laser device according to claim 1, wherein said active layer is of a quantum well structure.
Claim 4
Dependent Claim
25 words
A surface-emitting semiconductor laser device according to claim 1, further comprising a highly reflective coating provided over said end faces of each of said layers.
Claim 5
Dependent Claim
22 words
A surface-emitting semiconductor laser device according to claim 1, wherein the horizontal transverse confinement of light is performed by a self-aligned structure.
Claim 6
Dependent Claim
23 words
A surface-emitting semiconductor laser device according to claim 1, wherein the horizontal transverse confinement of light is performed by a ridge waveguide structure.
Claim 7
Dependent Claim
23 words
A surface-emitting semiconductor laser device according to claim 2, wherein the horizontal transverse confinement of light is performed by a ridge waveguide structure.
Claim 8
Dependent Claim
36 words
A surface-emitting semiconductor laser device according to claim 5, wherein a period of said diffraction grating is such that a Bragg wavelength determined by said period is larger than a wavelength at the peak of gain.
Claim 9
Dependent Claim
36 words
A surface-emitting semiconductor laser device according to claim 5, wherein a period of said diffraction grating is such that a Bragg wavelength determined by said period is smaller than a wavelength at the peak of gain.
Claim 10
Dependent Claim
115 words
A surface-emitting semiconductor laser device, comprising: a first electrode (51); a substrate (52) provide on said first electrode (51); a first-conductivity-type clad layer (53) provided on said substrate; an active layer (54) provided on said first-conductivity-type clad layer and having a quantum well structure; a second-conductivity-type clad layer (55) opposite to said active layer; an even-numbered order diffraction grating (58) provided on a first portion of said second-conductivity-type clad layer opposite to said active layer; and a second electrode (57) provided on a second portion of said second-conductivity-type clad layer opposite to said active layer, wherein said first portion and said second portion comprise a Bragg reflection region (60) and an active region (59), respectively.
Claim 11
Dependent Claim
115 words
A surface-emitting semiconductor laser device, comprising: a first electrode (51); a substrate (52) provide on said first electrode (51); a first-conductivity-type clad layer (53) provided on said substrate; an active layer (54) provided on said first-conductivity-type clad layer and having a quantum well structure; a second-conductivity-type clad layer (55) opposite to said active layer; an even-numbered order diffraction grating (58) provided on a first portion of said second-conductivity-type clad layer opposite to said active layer; and a second electrode (57) provided on a second portion of said second-conductivity-type clad layer opposite to said active layer, wherein said first portion and said second portion comprise a Bragg reflection region (60) and an active region (59), respectively.
Claim 12
Dependent Claim
34 words
A surface-emitting semiconductor laser device according to claim 9, wherein a period of said diffraction grating is such that a wavelength of laser oscillation is larger than a wavelength at the peak of gain.
Claim 13
Dependent Claim
22 words
A surface-emitting semiconductor laser device according to claim 9, wherein the transverse confinement of light is performed by a ridge waveguide structure.
Claim 14
Dependent Claim
22 words
A surface-emitting semiconductor laser device according to claim 10, wherein the transverse confinement of light is performed by a ridge waveguide structure.
Claim 15
Dependent Claim
116 words
A surface-emitting semiconductor laser device comprising: a first electrode (1); a substrate (2) provided on said first electrode; a first-conductivity-type clad layer (4) provided over said substrate; an active layer (5) provided on said first-conductivity-type clad layer, said active layer having a quantum well structure; a guide layer (7) provided over said active layer and having an even-numbered order diffraction grating opposite said active layer; a second-conductivity-type clad layer (9) provided on said diffraction grating in said guide layer; a contact layer (10) provided on a portion of said second conductivity clad layer; and a second electrode (18) provided on said contact layer, wherein end faces of said layers and said diffraction grating constitute a resonator.
Claim 16
Dependent Claim
116 words
A surface-emitting semiconductor laser device comprising: a first electrode (1); a substrate (2) provided on said first electrode; a first-conductivity-type clad layer (4) provided over said substrate; an active layer (5) provided on said first-conductivity-type clad layer, said active layer having a quantum well structure; a guide layer (7) provided over said active layer and having an even-numbered order diffraction grating opposite said active layer; a second-conductivity-type clad layer (9) provided on said diffraction grating in said guide layer; a contact layer (10) provided on a portion of said second conductivity clad layer; and a second electrode (18) provided on said contact layer, wherein end faces of said layers and said diffraction grating constitute a resonator.
Claim 17
Dependent Claim
36 words
A surface-emitting semiconductor laser device according to claim 13, wherein a period of said diffraction grating is such that a Bragg wavelength determined by said period is larger than a wavelength at the peak of gain.
Claim 18
Dependent Claim
36 words
A surface-emitting semiconductor laser device according to claim 13, wherein a period of said diffraction grating is such that a Bragg wavelength determined by said period is smaller than a wavelength at the peak of gain.
Claim 19
Dependent Claim
22 words
A surface-emitting semiconductor laser device according to claim 13, wherein the transverse confinement of light is performed by a ridge waveguide structure.
References Cited (Backward Citations)
JPS61168980A
Cited
JPS61189685A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-10 | 1993-01-09 | 1993-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-10 | 1997-01-09 | 1997-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-10 | 2001-01-09 | 2001-07-11 | $7700.00 | Window Closed / Lapsed |