US4842989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resist layer and process for forming resist pattern thereon
Assignee: Minolta Co Ltd
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Filing: 1987-12-17
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Granted: 1989-06-27
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Expires: 2007-12-17
Abstract
Abstract A resist layer comprising an organic polymer which is formed by subjecting a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine to a glow-discharge plasma polymerization process. Further, a process for forming resist pattern on the resist layer comprising a step of forming the resist layer; a step of forming a latent image by exposing the resist layer to an electron beam; and a step of visualizing the latent image by plasma etching.
Inventors
- 👤 Ichiro Taniguchi
- 👤 Hideo Hotomi
- 👤 Izumi Osawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:35
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G03F7/16; G03F7/167
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
87 words
A resist pattern formation process comprising: a step of forming a resist layer comprising an organic polymer layer by subjecting at least a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine to a glow-discharge plasma polymerization process; a step of plasma exposing said resist layer to a carbon tetrafluoride to be able to be used as a positive resist layer; a step of forming a latent image by exposing said resist layer to an electron beam; and a step of visualizing said latent image by plasma etching.
Claim 2
Dependent Claim
87 words
A resist pattern formation process comprising: a step of forming a resist layer comprising an organic polymer layer by subjecting at least a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine to a glow-discharge plasma polymerization process; a step of plasma exposing said resist layer to a carbon tetrafluoride to be able to be used as a positive resist layer; a step of forming a latent image by exposing said resist layer to an electron beam; and a step of visualizing said latent image by plasma etching.
Claim 3
Dependent Claim
60 words
A resist layer comprising an organic polymer of a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine, said resist layer being formed by subjecting said methacrylate incorporating fluorine and/or acrylate incorporating fluorine to a glow-disharge plasma polymerization process and subsequently exposing said resist layer to a carbon tetrafluoride plasma to be able to be used as a positive resist layer.
Claim 4
Dependent Claim
60 words
A resist layer comprising an organic polymer of a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine, said resist layer being formed by subjecting said methacrylate incorporating fluorine and/or acrylate incorporating fluorine to a glow-disharge plasma polymerization process and subsequently exposing said resist layer to a carbon tetrafluoride plasma to be able to be used as a positive resist layer.
Claim 5
Dependent Claim
18 words
A resist layer as claimed in claim 2 having a thickness of about 0.01 to about 10 microns.
Claim 6
Dependent Claim
20 words
A resist layer as claimed in claim 2 formed with the deposition rate of about 0.001 to about 0.5 micron/minutes.
Claim 7
Dependent Claim
22 words
A resist layer as claimed in claim 2 wherein preferred methacrylate incorporating fluorine and/or an acrylate incorporating fluorine are 1H,1H,5H-octafluoropentylmethacrylate and 1H,1H,5H-octafluoropentylacrylate.
Claim 8
Dependent Claim
117 words
A resist layer comprising a substrate and an organic polymer layer formed on the substrate and comprising a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine, said resist layer being formed by a process including a step of heating the substrate placed in a reactor chamber to a predetermined temperature; a step of introducing gaseous materials including methacrylate incorporating fluorine and/or acrylate incorporating fluorine into the reactor chamber; a step of causing plasma discharge in the reactor chamber while introducing the gaseous materials to form the organic polymer layer on the heated substrate; and a step of plasma exposing said resist layer to a carbon tetrafluoride to be able to be used as a positive resist layer.
Claim 9
Dependent Claim
117 words
A resist layer comprising a substrate and an organic polymer layer formed on the substrate and comprising a methacrylate incorporating fluorine and/or an acrylate incorporating fluorine, said resist layer being formed by a process including a step of heating the substrate placed in a reactor chamber to a predetermined temperature; a step of introducing gaseous materials including methacrylate incorporating fluorine and/or acrylate incorporating fluorine into the reactor chamber; a step of causing plasma discharge in the reactor chamber while introducing the gaseous materials to form the organic polymer layer on the heated substrate; and a step of plasma exposing said resist layer to a carbon tetrafluoride to be able to be used as a positive resist layer.
References Cited (Backward Citations)
US4421843A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-26 | 1992-12-26 | 1993-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-26 | 1996-12-26 | 1997-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-26 | 2000-12-26 | 2001-06-27 | $7700.00 | Window Closed / Lapsed |