Reflection technique for thermal mapping of semiconductors

Claim 1

A process of determining a temperature of a semiconductor comprising the steps of: illuminating the semiconductor with electromagnetic radiation while incrementally adjusting the electromagnetic radiation's wavelength, wherein said illuminating step comprises shining infrared radiation on the semiconductor using a monochrometer while incrementally adjusting wavelengths emitted by the monochrometer, wherein said infrared radiation used in said illuminating step is confined to a near infrared region with wavelengths between 0.75 and 3.0 microns; producing a semiconductor image by capturing the electromagnetic radiation as it reflects off of the semiconductor by focusing an optical microscope upon the semiconductor to produce thereby said semiconductor image; detecting a transition point which occurs when said semiconductor reflects a reduced amount of said electromagnetic radiation and transmits some of the electromagnetic radiation, wherein said detecting step comprises using an infrared-sensitive detector to sense the semiconductor image from the microscope while receiving an indication of a decrease of illumination in the semiconductor image as the monochrometer is incrementally tuned, the decrease of illumination being an indication of the transition point; noting a transition wavelength of the electromagnetic radiation which occurs at the transition point, wherein the transition wavelength corresponds with a setting of wavelength of the electromagnetic radiation emitted by the monochrometer at the transition point; ascertaining an actual band gap energy for the semiconductor from the transition wavelength; and determining the actual temperature of the semiconductor from the actual band gap energy and transition wavelength, wherein the determining step comprises performing a mathematical calculation using the equation: ##EQU2## T equals the temperature of the semiconductor; E GT equals the actual band gap energy of the semiconductor; E Go equals a reference band gap energy for the semiconductor which occurs at a reference temperature of 300° K.; α G equals an empirical constant characteristics of the semiconductor; and k equals a Boltzmann constant.

Claim 3

A device for determining a semiconductor's actual temperature comprising: an infrared source which emits a broad spectrum of light; a tunable monochrometer which receives said broad spectrum of light from said infrared source and produces therefrom an illuminating monochromatic radiation at tunable wavelengths, said illuminating monochromatic radiation being reflected off of said semiconductor, said tunable monochrometer also indicating to users a value of the illuminating monochromatic radiation's wavelength actually being emitted; a microscope which receives light reflected off of said semiconductor from said illuminating source to produce an image of said semiconductor; a detector which receives and converts said image of said semiconductor from said microscope and converts said image into electrical signals; and a display means which receives said electrical signals from said detector and displays said semiconductor image as said tunable monochrometer is incrementally tuned, said display means indicating a decrease of light reflected off of said semiconductor at a transition point where said illuminating monochromatic radiation is transmitted through the semiconductor rather than reflected off of it, said transition point occuring at a specific wavelength which corresponds to the semiconductor's actual band gap energy and actual temperature, said specific wavelength being the value of the monochromatic radiation's wavelength actually emitted by the tunable monochrometer at the transition point.

Claim 4

A device for determining a semiconductor's actual temperature comprising: an infrared source which emits a broad spectrum of light; a tunable monochrometer which receives said broad spectrum of light from said infrared source and produces therefrom an illuminating monochromatic radiation at tunable wavelengths, said illuminating monochromatic radiation being reflected off of said semiconductor, said tunable monochrometer also indicating to users a value of the illuminating monochromatic radiation's wavelength actually being emitted; a microscope which receives light reflected off of said semiconductor from said illuminating source to produce an image of said semiconductor; a detector which receives and converts said image of said semiconductor from said microscope and converts said image into electrical signals; and a display means which receives said electrical signals from said detector and displays said semiconductor image as said tunable monochrometer is incrementally tuned, said display means indicating a decrease of light reflected off of said semiconductor at a transition point where said illuminating monochromatic radiation is transmitted through the semiconductor rather than reflected off of it, said transition point occuring at a specific wavelength which corresponds to the semiconductor's actual band gap energy and actual temperature, said specific wavelength being the value of the monochromatic radiation's wavelength actually emitted by the tunable monochrometer at the transition point.