US4838987A
Expired / Lapsed
US
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Method of etching a semiconductor body
Assignee: US Philips Corp
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Filing: 1988-04-21
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Granted: 1989-06-13
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Expires: 2008-04-21
Abstract
Abstract A method of etching a semiconductor body having first (6) and second opposed surfaces and having a first semiconductor region (1) adjacent the first surface (6) and a second semiconductor region (2) disposed between the first semiconductor region and the second surface, the first (1) and second (2) semiconductor regions being formed such that the second semiconductor region (2) first absorbs radiation at a wavelength less than the wavelength at which the first semiconductor region first absorbs radiation. The second surface provides an optically distinguishable feature, for example an optically opaque conductive layer (3) formed with an aperture (4). The method further comprises aligning a radiation source with the feature (4) and activating the radiation source to produce radiation having a wavelength or range of wavelengths shorter than or equal to that at which the first semiconductor region (1) first absorbs radiation but longer than that at which the second semiconductor region (2) first absorbs radiation so that the radiation induces etching of the first semiconductor region in alignment with the optically distinguishable feature of the second surface but does not induce etching of the second region (2) so enabling a hole (8) to be formed aligned with the aperture (4) to allow light to pass through the second region (2) which may comprise a transmission etalon in the form of a multiple quantum well structure.
Inventors
- 👤 Peter J. Dobson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 00:27
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/646
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
145 words
A method of etching a semiconductor body, which method comprises providing a semiconductor body having first and second opposed surfaces and a first semiconductor region adjacent the first surface, bringing an etchant and the first surface into contact with each other, directing a radiation source towards the first surface, activating the radiation source to produce radiation having a wavelength or range of wavelengths shorter than or equal to that at which the first semiconductor region first absorbs radiation so as to induce etching of the first semiconductor region where the radiation is incident on the first surface, characterised by providing the semiconductor body with an optically distinguishable feature on the second surface and by aligning the radiation source with the optically distinguishable feature so that the radiation induces etching of the first semiconductor region in alignment with the optically distinguishable feature of the second surface.
Claim 2
Independent Claim
145 words
A method of etching a semiconductor body, which method comprises providing a semiconductor body having first and second opposed surfaces and a first semiconductor region adjacent the first surface, bringing an etchant and the first surface into contact with each other, directing a radiation source towards the first surface, activating the radiation source to produce radiation having a wavelength or range of wavelengths shorter than or equal to that at which the first semiconductor region first absorbs radiation so as to induce etching of the first semiconductor region where the radiation is incident on the first surface, characterised by providing the semiconductor body with an optically distinguishable feature on the second surface and by aligning the radiation source with the optically distinguishable feature so that the radiation induces etching of the first semiconductor region in alignment with the optically distinguishable feature of the second surface.
Claim 3
Dependent Claim
89 words
A method according to claim 1, which comprises providing the semiconductor body so that a second semiconductor is disposed between the first semiconductor region and the second surface, the first and second semiconductor regions being formed such that the second semiconductor region first absorbs radiation at a wavelength less than the wavelength at which the first semiconductor region first absorbs radiation, and which comprises activating the radiation source to produce radiation having a wavelength or range of wavelengths longer than at which the second semiconductor region first absorbs radiation.
Claim 4
Dependent Claim
25 words
A method according to claim 2, which comprises providing the second region by growing a multiple quantum well or superlattice structure on the first region.
Claim 5
Dependent Claim
36 words
A method according to claim 3, which comprises providing the first region as a gallium arsenide substrate and growing the multiple quantum well or superlattice structure as alternate layers of gallium aluminium arsenide and gallium arsenide.
Claim 6
Dependent Claim
27 words
A method according to claim 2, 3, or 4, which comprises providing the second region as at least part of a mesa structure on the first region.
Claim 7
Independent Claim
18 words
A method according to 1, 2, 3 or 4, which comprises using a laser as the radiation source.
Claim 8
Independent Claim
18 words
A method according to 1, 2, 3 or 4, which comprises using a laser as the radiation source.
Claim 9
Independent Claim
73 words
A method according to 1, 2, 3 or 4, which comprises aligning the radiation source with the optically distinguishable feature by directing a beam of radiation from a subsidiary radiation source having a fixed orientation relative to the radiation source at the semiconductor body, effecting relative movement between the semiconductor body and the radiation sources and detecting the amount of radiation from the subsidiary radiation source transmitted and/or reflected by the second surface.
Claim 10
Independent Claim
73 words
A method according to 1, 2, 3 or 4, which comprises aligning the radiation source with the optically distinguishable feature by directing a beam of radiation from a subsidiary radiation source having a fixed orientation relative to the radiation source at the semiconductor body, effecting relative movement between the semiconductor body and the radiation sources and detecting the amount of radiation from the subsidiary radiation source transmitted and/or reflected by the second surface.
Claim 11
Independent Claim
29 words
A method according to 1, 2, 3 or 4, which comprises providing the optically distinguishable feature as an aperture in an electrically conductive layer carried on the second surface.
Claim 12
Independent Claim
29 words
A method according to 1, 2, 3 or 4, which comprises providing the optically distinguishable feature as an aperture in an electrically conductive layer carried on the second surface.
Claim 13
Independent Claim
39 words
A method according to 1, 2, 3 or 4, which comprises using a radiation detector to detect the amount of radiation from the radiation source(s) passing through the semiconductor body to monitor the etching of the first semiconductor region.
Claim 14
Independent Claim
39 words
A method according to 1, 2, 3 or 4, which comprises using a radiation detector to detect the amount of radiation from the radiation source(s) passing through the semiconductor body to monitor the etching of the first semiconductor region.
Claim 15
Independent Claim
155 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor body having first and second opposed surfaces and a first semiconductor region adjacent the first surface, bringing an etchant and the first surface into contact with each other, directing a radiation source towards the first surface, activating the radiation source to produce radiation having a wavelength or range of wavelengths shorter than or equal to that at which the first semiconductor region first absorbs radiation so as to induce etching of the first semiconductor region where the radiation is incident on the first surface, characterised by providing the semiconductor body with an optically distinguishable feature on the seond surface and by aligning the radiation source with the optically distinguishable feature so that the radiation induces etching of the first semiconductor region in alignment with the optically distinguishable feature of the second surface, wherein said etched semiconductor body forms a semiconductor device.
Claim 16
Independent Claim
155 words
A method of manufacturing a semiconductor device comprising the steps of providing a semiconductor body having first and second opposed surfaces and a first semiconductor region adjacent the first surface, bringing an etchant and the first surface into contact with each other, directing a radiation source towards the first surface, activating the radiation source to produce radiation having a wavelength or range of wavelengths shorter than or equal to that at which the first semiconductor region first absorbs radiation so as to induce etching of the first semiconductor region where the radiation is incident on the first surface, characterised by providing the semiconductor body with an optically distinguishable feature on the seond surface and by aligning the radiation source with the optically distinguishable feature so that the radiation induces etching of the first semiconductor region in alignment with the optically distinguishable feature of the second surface, wherein said etched semiconductor body forms a semiconductor device.
References Cited (Backward Citations)
US4525687A
Cited
US4518456A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-06-12 | 1992-12-12 | 1993-06-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-12 | 1996-12-12 | 1997-06-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-12 | 2000-12-12 | 2001-06-13 | $7700.00 | Window Closed / Lapsed |