US4836888A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chemically etching semiconductor substrate
Assignee: Nissan Motor Co Ltd
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Filing: 1988-05-17
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Granted: 1989-06-06
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Expires: 2008-05-17
Abstract
Abstract In a method of etching a semiconductor substrate to a desired depth from the principal surface is a selected area or selected areas by immersing the semiconductor substrate with a patterned mask such as oxide film in an etching liquid such as hydrated hydrazine, an electrode is formed on a surface of the semiconductor substrate in an area separated from the area(s) to be etched before immersing the substrate in the etching liquid. The material of the electrode is chemically stable and insusceptible to reaction with the etching liquid. In the disclosed etching method, a cathodic reduction reaction takes place on the aforementioned electrode while an anodic oxidation reaction, which causes anodic dissolution of the semiconductor material, takes place in the exposed area(s) of the semiconductor substrate. Therefore, etching is not obstacled by precipitation of the material once dissolved in the etching liquid, so that the new surface provided by etching is excellen in flatness.
Inventors
- 👤 Hidetoshi Nojiri
- 👤 Ryuta Hirayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:52
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/613; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
125 words
In a method of etching a semiconductor substrate in at least one selected area by immersing the semiconductor substrate in an etching liquid to cause oxidation-reduction reactions between the semiconductor substrate and the etching liquid, the improvement comprising the step of forming an electrode on a surface of the semiconductor substrate in an area separate from any of said at least one selected area, wherein said electrode is a film formed on the semiconductor surface subjected to etching and is separated from any of said at least one selected area by an oxide film previously formed on the same surface before immersing the semiconductor substrate in the etching liquid, the material of said electrode being chemically stable and insusceptible to reaction with the etching liquid.
Claim 2
Dependent Claim
125 words
In a method of etching a semiconductor substrate in at least one selected area by immersing the semiconductor substrate in an etching liquid to cause oxidation-reduction reactions between the semiconductor substrate and the etching liquid, the improvement comprising the step of forming an electrode on a surface of the semiconductor substrate in an area separate from any of said at least one selected area, wherein said electrode is a film formed on the semiconductor surface subjected to etching and is separated from any of said at least one selected area by an oxide film previously formed on the same surface before immersing the semiconductor substrate in the etching liquid, the material of said electrode being chemically stable and insusceptible to reaction with the etching liquid.
Claim 3
Dependent Claim
40 words
A method according to claim 1, further comprising the step of forming a high-concentration impurity diffused layer in a surface region of the semiconductor substrate before forming said electrode such that said electrode makes direct contact with said diffused layer.
Claim 4
Dependent Claim
93 words
In a method of etching a semiconductor substrate in at least one selected area by immersing the semiconductor substrate in an etching liquid to cause oxidation-reduction reactions between the semiconductor substrate and the etching liquid, the improvement comprising the step of forming an electrode on a high-concentration impurity diffused layer previously formed in a rear surface region of the semiconductor substrate opposite to the surface subjected to etching before immersing the semiconductor substrate in the etching liquid, the material of said electrode being chemically stable and insusceptible to reaction with the etching liquid.
Claim 5
Dependent Claim
93 words
In a method of etching a semiconductor substrate in at least one selected area by immersing the semiconductor substrate in an etching liquid to cause oxidation-reduction reactions between the semiconductor substrate and the etching liquid, the improvement comprising the step of forming an electrode on a high-concentration impurity diffused layer previously formed in a rear surface region of the semiconductor substrate opposite to the surface subjected to etching before immersing the semiconductor substrate in the etching liquid, the material of said electrode being chemically stable and insusceptible to reaction with the etching liquid.
Claim 6
Dependent Claim
24 words
A method according to claim 1, wherein the material of said electrode is selected from the group consisting of platinum, gold, tantalum and carbon.
Claim 7
Dependent Claim
21 words
A method according to claim 1, wherein said semiconductor substrate is a silicon semiconductor substrate, said etching liquid being hydrated hydrazine.
References Cited (Backward Citations)
US4765865A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-06-05 | 1992-12-05 | 1993-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-06-05 | 1996-12-05 | 1997-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-06-05 | 2000-12-05 | 2001-06-06 | $7700.00 | Window Closed / Lapsed |