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US4836882A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making an acceleration hardened resonator

Assignee: United States Department of the Army
•
Filing: 1988-09-12
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Granted: 1989-06-06
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Expires: 2008-09-12
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Abstract

Abstract An acceleration hardened resonator is made by a method including the stepsf: (A) manufacturing and mounting the resonator, (B) performing acceleration tests to determine the acceleration sensitivity, (C) changing the interaction of the motional distribution with the stress field of the resonator in order to reduce the acceleration sensitivity, and (D) repeating steps (B) and (C) until a minimal acceleration sensitivity is obtained.

Inventors

  • 👤 Arthur Ballato

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 05:12
CPC Classifications
H; H03; H03H; H03H3/00; H03H3/007; H03H3/013

Claims Analysis

Total Claims: 34
Claim 1
Independent Claim 64 words
Method of making an acceleration hardened resonator said method including the steps of: (A) manufacturing and mounting the resonator, (B) performing acceleration tests to determine the acceleration sensitivity, (C) changing the interaction of the motional distribution with the stress field of the resonator in order to reduce the acceleration sensitivity, and (D) repeating steps (B) and (C) until a minimal acceleration sensitivity is obtained.
Claim 2
Dependent Claim 64 words
Method of making an acceleration hardened resonator said method including the steps of: (A) manufacturing and mounting the resonator, (B) performing acceleration tests to determine the acceleration sensitivity, (C) changing the interaction of the motional distribution with the stress field of the resonator in order to reduce the acceleration sensitivity, and (D) repeating steps (B) and (C) until a minimal acceleration sensitivity is obtained.
Claim 3
Dependent Claim 50 words
Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by an etching method selected from the group consisting of ion beam milling, RIE etching, chemical etching, chemomechanical etching, photolytic etching, laser ablation and plasma etching.
Claim 4
Dependent Claim 25 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by ion beam milling.
Claim 5
Dependent Claim 24 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by RIE etching.
Claim 6
Dependent Claim 24 words
Method according to claim 2 wherein the interaction fo the motional distribution with the stress field of the resonator is changed by chemical etching.
Claim 7
Dependent Claim 24 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by chemomechanical etching.
Claim 8
Dependent Claim 24 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by photolytic etching.
Claim 9
Dependent Claim 24 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by laser ablation.
Claim 10
Dependent Claim 24 words
Method according to claim 2 wherein the interaction of the motional distribution with the stress field of the resonator is changed by plasma etching.
Claim 11
Dependent Claim 18 words
Method according to claim 2 wherein the etching is carried out by the use of multi-line raster scan.
Claim 12
Dependent Claim 14 words
Method according to claim 2 wherein the etching is carried out by analog method.
Claim 13
Dependent Claim 64 words
Method according to claim 1 wherein in step (C) the interaction of the motional distribution with the stress field of the resonator is changed by a deposition method selected from the group consisting of ion implantation, thermal evaporation, molecular beam epitaxy, electron beam vaporization, anodization, electroplating, liquid-phase epitaxy, sputtering, plasma oxidation, inorganic film deposition, laser-assisted CVD, gas phase photolysis, spray coating, alloying, and doping.
Claim 14
Dependent Claim 24 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by ion implantation.
Claim 15
Dependent Claim 24 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by thermal evaporation.
Claim 16
Dependent Claim 25 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by molecular beam epitaxy.
Claim 17
Dependent Claim 25 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by electron beam vaporization.
Claim 18
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by anodization.
Claim 19
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by electroplating.
Claim 20
Dependent Claim 24 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by liquid-phase epitaxy.
Claim 21
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by sputtering.
Claim 22
Dependent Claim 24 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by plasma oxidation.
Claim 23
Dependent Claim 25 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by inorganic film deposition.
Claim 24
Dependent Claim 26 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by organic film polymerization. 18
Claim 25
Dependent Claim 25 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by chemical vapor deposition.
Claim 26
Dependent Claim 26 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by laser-assisted chemcial vapor deposition.
Claim 27
Dependent Claim 25 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by gas phase photolysis.
Claim 28
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distributionwith the stress field of the resonator is changed by spray coating.
Claim 29
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by alloying.
Claim 30
Dependent Claim 23 words
Method according to claim 12 wherein the interaction of the motional distribution with the stress field of the resonator is changed by doping.
Claim 31
Dependent Claim 19 words
Method according to claim 12 wherein the deposition is carried out by the use of a multi-line raster scan.
Claim 32
Dependent Claim 15 words
Method according to claim 12 wherein the deposition is carried out by an analog method.
Claim 33
Dependent Claim 36 words
Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by annealing portions of the electrode, by shining thereon an electron beam.
Claim 34
Dependent Claim 38 words
Method according to claim 1 wherein in step (C), the interaction of the motional distribution with the stress field of the resonator is changed by annealing portions of the electrode, by shining thereon an electromagnetic source of energy.

References Cited (Backward Citations)

US4278492A Cited
US4389275A Cited
US4614119A Cited
US4764244A Cited

USPTO Annuity & Maintenance Windows

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