Patent DE659759C successfully refreshed from Google Patents.
US4835587A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device for detecting radiation
Assignee: Fuji Electric Co Ltd
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Filing: 1987-10-01
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Granted: 1989-05-30
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Expires: 2007-10-01
Abstract
Abstract A semiconductor device for detecting gamma radiation displaying superior linearity of response to radiation without showing any energy dependency even if the gamma rays have the high energy is formed using an annular depletion region surrounded by non-depletion regions. The size of the regions is selected so that the distance from the edge of the depletion to the most distant point of the non-depletion region is at least about equal to the mean range of the highest energy gamma ray to be measured.
Inventors
- 👤 Noritada Sato
- 👤 Yasukazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 19:28
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/29; H10F30/295; H10F30/2955; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F77/00; H10F77/10; H10F77/14; H10F77/148; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
180 words
A semiconductor device for detecting gamma radiation having a maximum energy comprising: (a) a semiconductor substrate having two principal surfaces; (b) a substantially annular region of a semiconductor material different from said substrate disposed on a first of said principal surfaces; (c) a first electrode disposed on said first principal surface and making electrical contact with said annular region of semiconductor material; and (d) a second electrode disposed on a second principal surface of the substrate; wherein application of a biasing voltage between said electrodes leads to the formation of an annular depletion region within the substrate and adjacent to said annular region of semiconductor material, said substrate and said annular region of semiconductor material of a size such that the inner diameter of the depletion region is at least substantially equal to a mean range of secondary electrons generated by incidence of said maximum energy gamma radiation on said substrate, and such that the distance from the outer edge of said annular depletion region to an edge of the substrate is at least substantially equal to said mean range.
Claim 2
Dependent Claim
180 words
A semiconductor device for detecting gamma radiation having a maximum energy comprising: (a) a semiconductor substrate having two principal surfaces; (b) a substantially annular region of a semiconductor material different from said substrate disposed on a first of said principal surfaces; (c) a first electrode disposed on said first principal surface and making electrical contact with said annular region of semiconductor material; and (d) a second electrode disposed on a second principal surface of the substrate; wherein application of a biasing voltage between said electrodes leads to the formation of an annular depletion region within the substrate and adjacent to said annular region of semiconductor material, said substrate and said annular region of semiconductor material of a size such that the inner diameter of the depletion region is at least substantially equal to a mean range of secondary electrons generated by incidence of said maximum energy gamma radiation on said substrate, and such that the distance from the outer edge of said annular depletion region to an edge of the substrate is at least substantially equal to said mean range.
Claim 3
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein the semiconductor substrate is a P-type material and the annular region is formed from an N-type material.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, comprising a plurality of substantially annular regions of semiconductor material disposed as a fused array on the substrate.
Claim 5
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein the maximum energy of the gamma radiation is about 6 MeV and the inner diameter of the depletion region is about 4.6 mm.
Claim 6
Dependent Claim
31 words
A semiconductor device according to claim 2, wherein the maximum energy of the gamma radiation is about 6 MeV and the inner diameter of the depletion region is about 4.6 mm.
Claim 7
Dependent Claim
31 words
A semiconductor device according to claim 3, wherein the maximum energy of the gamma radiation is about 6 MeV and the inner diameter of the depletion region is about 4.6 mm.
Claim 8
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein the semiconductor substrate and the annular region form a heterojunction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-29 | 1992-11-28 | 1993-05-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-29 | 1996-11-28 | 1997-05-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-29 | 2000-11-28 | 2001-05-30 | $7700.00 | Window Closed / Lapsed |