US4833509A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit reference diode and fabrication method therefor
Assignee: Texas Instruments Tucson Corp
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Filing: 1983-10-31
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Granted: 1989-05-23
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Expires: 2003-10-31
Abstract
Abstract This disclosure is a integrated circuit reference diode having improved manufacturability and electrical characteristics. The improved diode results from a structure and process which both reduces the subsurface breakdown and enhances the surface breakdown.
Inventors
- 👤 Robert E. Hickox
- 👤 William R. Edwards, III
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:14
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/20; H10D8/25
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
215 words
A reference diode for use in an integrated circuit substrate region having a major surface comprising in combination: a first region of a first conductivity type located in said substrate region and extending to said major surface; a first region of a second conductivity type located in said first region of said first conductivity type and extending to said major surface; a second region of said first conductivity located within the boundaries of and having a greater doping concentration than said first region of said first conductivity type, said second region being located below and centrally of said first region of second conductivity type; and a second region of said second conductivity type in contact with both said first region of first conductivity type and said first region of said second conductivity type at said surface, said first region of said second conductivity type extending further into said substrate region than said second region of said second conductivity type, and said second region of said second conductivity type having a doping concentration less than that of said first region of said second conductivity type at said surface, and said second region of said second conductivity type has a total doping in the range of about 10 13 to about 10 14 ions per square centimeter.
Claim 2
Dependent Claim
215 words
A reference diode for use in an integrated circuit substrate region having a major surface comprising in combination: a first region of a first conductivity type located in said substrate region and extending to said major surface; a first region of a second conductivity type located in said first region of said first conductivity type and extending to said major surface; a second region of said first conductivity located within the boundaries of and having a greater doping concentration than said first region of said first conductivity type, said second region being located below and centrally of said first region of second conductivity type; and a second region of said second conductivity type in contact with both said first region of first conductivity type and said first region of said second conductivity type at said surface, said first region of said second conductivity type extending further into said substrate region than said second region of said second conductivity type, and said second region of said second conductivity type having a doping concentration less than that of said first region of said second conductivity type at said surface, and said second region of said second conductivity type has a total doping in the range of about 10 13 to about 10 14 ions per square centimeter.
References Cited (Backward Citations)
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-22 | 1992-11-21 | 1993-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-22 | 1996-11-21 | 1997-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-22 | 2000-11-21 | 2001-05-23 | $7700.00 | Window Closed / Lapsed |