Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
132 words
Generator circuit in an integrated semiconductor circuit for generating a clock voltage having a voltage being raised with respect to a supply potential of the generator circuit, comprising: a first CMOS inverter having an input connected to a first clock signal and having an output carrying a clock voltage as an output signal of the generator circuit; a second CMOS inverter having an input connected to a second clock signal and having an output; said inverters each having transistors of a first conduction type with source terminals, a transfer transistor of the first conduction type connected between said source terminals and a supply potential, and a capacitor connected between said source terminals and a pump signal; said transfer transistor having a gate terminal connected to said output of the second CMOS inverter.
Claim 2
Dependent Claim
132 words
Generator circuit in an integrated semiconductor circuit for generating a clock voltage having a voltage being raised with respect to a supply potential of the generator circuit, comprising: a first CMOS inverter having an input connected to a first clock signal and having an output carrying a clock voltage as an output signal of the generator circuit; a second CMOS inverter having an input connected to a second clock signal and having an output; said inverters each having transistors of a first conduction type with source terminals, a transfer transistor of the first conduction type connected between said source terminals and a supply potential, and a capacitor connected between said source terminals and a pump signal; said transfer transistor having a gate terminal connected to said output of the second CMOS inverter.
Claim 3
Dependent Claim
26 words
Generator circuit according to claim 1, wherein each of said transistors of the first conduction type have a substrate region connected to said source terminal thereof.
Claim 4
Dependent Claim
38 words
Generator circuit according to claim 1, wherein each of said transistors of the first conduction type have substrate regions connected to a trough voltage being at least as high as the maximum potential occurring in the generator circuit.
Claim 5
Dependent Claim
34 words
Generator circuit according to claim 1, wherein said inverters also have other transistors of a second conduction type opposite to said first conduction type, said other transistors having interconnected substrate regions and source terminals.
Claim 6
Dependent Claim
37 words
Generator circuit according to claim 1, wherein said inverters also have other transistors of a second conduction type opposite to said first conduction type, said other transistors having substrate regions connected to a separate substrate bias voltage.
Claim 7
Dependent Claim
61 words
Generator circuit according to claim 1, wherein said inverters also have other transistors of a second conduction type opposite to said first conduction type, said transistors of said second conduction type each having a substrate with a trough of said first conduction type therein, and each of said transistors of said first conduction type having substrate regions disposed in said trough.
Claim 8
Dependent Claim
51 words
Generator circuit according to claim 1, wherein said transistors of said first conduction type each have a substrate with a trough of a second conduction type opposite said first conduction type therein, and said inverters also have other transistors of said second conduction type having substrate regions disposed in said trough.