US4831628A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Denices fabricated using method of selective area epitaxial growth using ion beams
Assignee: Nokia Bell Labs
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Filing: 1986-11-10
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Granted: 1989-05-16
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Expires: 2006-11-10
Abstract
Abstract A method of selective area epitaxial growth using a scanning ion beam is described.
Inventors
- 👤 Won-Tien Tsang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:06
CPC Classifications
B; B82; B82Y; B82Y10/00; C; C30; C30B; C30B23/00; C30B23/02; C30B23/04; C30B23/08; H; H10; H10D; H10D30/00; H10D30/40; H10D30/43; H10D30/435; H10D62/00; H10D62/80; H10D62/81; H10D62/812; H10D62/813; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B2006/12166; G02B2006/12178; Y; Y10; Y10S; Y10S117/00; Y10S117/918
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
65 words
A device comprising a structure which is epitaxially grown on a substrate and which comprises localized Group-III-V material, said material being grown by exposing a surface to a localized beam of ionized Group-III particles while said surface is flooded with a thermal beam of Group-V particles, whereby at least a portion of said material is rounded as viewed in the direction of said localized beam.
Claim 2
Independent Claim
65 words
A device comprising a structure which is epitaxially grown on a substrate and which comprises localized Group-III-V material, said material being grown by exposing a surface to a localized beam of ionized Group-III particles while said surface is flooded with a thermal beam of Group-V particles, whereby at least a portion of said material is rounded as viewed in the direction of said localized beam.
Claim 3
Dependent Claim
16 words
The device of claim 1 in which said material forms active stripes of a buried-heterostructure laser.
Claim 4
Dependent Claim
14 words
The device of claim 1 in which said material forms a one-dimensional conducting channel.
Claim 5
Dependent Claim
21 words
The device of claim 3 in which said channel provides for high-mobility conduction between a source region and a drain region.
Claim 6
Dependent Claim
11 words
The device of claim 3 in which said channel is non-planar.
Claim 7
Dependent Claim
16 words
The device of claim 1 in which said material forms a plurality of electron-or-hole gas pockets.
Claim 8
Dependent Claim
17 words
The device of claim 1 in which said material forms multiple laser-active areas feeding into a waveguide.
Claim 9
Dependent Claim
12 words
The device of claim 1 in which said material forms a waveguide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-15 | 1992-11-14 | 1993-05-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-15 | 1996-11-14 | 1997-05-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-15 | 2000-11-14 | 2001-05-16 | $7700.00 | Window Closed / Lapsed |