Dynamic random access semiconductor memory wherein the RAS and CAS strobes respectively select the bit line and word line pairs

Claim 2

A dynamic random access semiconductor memory device comprising: a plurality of dynamic random access memory cells integrated in a semiconductor substrate; means for selecting a word line pair to which at least one of said memory cells is connected and a bit line pair connected to said memory cell, selecting including a clocking means for timing generation of a row address signal and a column address signal; and a bit line sense amplifier including a differential amplifier connected to said bit line pair; wherein driving transistors of said differential amplifier are bipolar transistors and said bit line pair is selected at a first timing by said row address signal of a multiplex address signal and said word line pair is selected at a second timing following said first timing by said column address signal of said multiplex address signal.

Claim 3

A dynamic random access semiconductor memory device according to claim 1, wherein said device further comprises a complementary MOS flip-flop connected between a drain voltage source and a source voltage source for restoring data into said memory cell, input/output nodes thereof being connected to said bit line pair, respectively.

Claim 4

A dynamic random access semiconductor memory device according to claim 1, wherein said memory cell comprises one MOS transistor whose drain is connected to a bit line and one capacitor connected between the source of said MOS transistor and a source voltage source.

Claim 5

A dynamic random access semiconductor memory device according to claim 1, wherein clocked complementary MOS inverters are connected between one of said bit line pairs and the base of one of said driving transistors and between the other of said bit line pair and the base of the other of said driving transistors, respectively, preventing a DC component path from being made between said bit line and said base, each of said inverters being connected to a drain voltage source and a source voltage source.

Claim 6

A dynamic random access semiconductor memory device comprising; first and second bit lines constituting a bit line pair; a C MOS F.F (complementary MOS flip-flop) connected between a drain voltage source and a source voltage source for restoring data into a memory cell, a first output node thereof being connected to said first bit line and a second output node thereof being connected to said second bit line; a memory cell including one MOS transistor whose drain is connected to said first bit line and one capacitor connected between the source of said MOS transistor and said source voltage source, the gate of said MOS transistor being connected to a word line; a dummy memory cell including one dummy MOS transistor whose drain is connected to said second bit line, and one dummy capacitor connected between the source of said dummy MOS transistor and said source voltage source, the gate of said dummy MOS transistor being connected to a dummy word line; a differential amplifier connected between said drain voltage source and said source voltage source and including first and second bipolar transistors used as driving transistors, said differential amplifier being used as a bit line sense amplifier; a first C 2 MOS inverter (clocked complementary MOS inverter) connected between said drain voltage source and said source voltage source, whose input is connected to said first bit line and whose output is connected to the base of said first bipolar transistor, for preventing a DC component path from being made between said bit line an said base; a second C 2 MOS inverter connected between said drain voltage source and said source voltage source, whose input is connected to said second bit line and whose output is connected to the base of said second bipolar transistor, for preventing a DC component path from being made between said bit line and said base; wherein said bit line pair is selected at a first timing by a row address signal of a multiplex address signal for activating said first and second C 2 MOS inverters and said differential amplifier and; a word line pair including said word line and said dummy word line is selected at a second timing following said first timing by a column address signal of said multiplex address signal.

Claim 7

A dynamic random access semiconductor memory device comprising; first and second bit lines constituting a bit line pair; a C MOS F.F (complementary MOS flip-flop) connected between a drain voltage source and a source voltage source for restoring data into a memory cell, a first output node thereof being connected to said first bit line and a second output node thereof being connected to said second bit line; a memory cell including one MOS transistor whose drain is connected to said first bit line and one capacitor connected between the source of said MOS transistor and said source voltage source, the gate of said MOS transistor being connected to a word line; a dummy memory cell including one dummy MOS transistor whose drain is connected to said second bit line, and one dummy capacitor connected between the source of said dummy MOS transistor and said source voltage source, the gate of said dummy MOS transistor being connected to a dummy word line; a differential amplifier connected between said drain voltage source and said source voltage source and including first and second bipolar transistors used as driving transistors, said differential amplifier being used as a bit line sense amplifier; a first C 2 MOS inverter (clocked complementary MOS inverter) connected between said drain voltage source and said source voltage source, whose input is connected to said first bit line and whose output is connected to the base of said first bipolar transistor, for preventing a DC component path from being made between said bit line an said base; a second C 2 MOS inverter connected between said drain voltage source and said source voltage source, whose input is connected to said second bit line and whose output is connected to the base of said second bipolar transistor, for preventing a DC component path from being made between said bit line and said base; wherein said bit line pair is selected at a first timing by a row address signal of a multiplex address signal for activating said first and second C 2 MOS inverters and said differential amplifier and; a word line pair including said word line and said dummy word line is selected at a second timing following said first timing by a column address signal of said multiplex address signal.