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US4831492A Expired / Lapsed US ⏱️ 0.0 years remaining

Capacitor construction for use in pressure transducers

Assignee: Vaisala Oy
•
Filing: 1988-05-04
•
Granted: 1989-05-16
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Expires: 2008-05-04
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Abstract

Abstract This publication discloses a capacitor construction for use in pressure transducers, including a substrate plate having of a silicon wafer and a thinner glass wafer. A first fixed capacitor plate is provided for overlying the substrate plate plate. A silicon plate is adapted to encircle the substrate plate with its thinned center area acting as a moving capacitor plate by virtue of its diaphragm behavior and a top plate overlying the silicon plate includes a silicon wafer and a glass wafer bonded to the silicon wafer and having a thickness essentially smaller than that of the silicon wafer. According to the invention, over the supporting substrate plate and between the first capacitor plate and its encircling silicon plate, is provided another overlying capacitor overlying plate, which essentially encloses the first capacitor plate. With this design, a reduced temperature sensitivity is accomplished in the capacitor construction.

Inventors

  • 👤 Heikki Kuisma

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 17:01
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 234 words
A capacitor construction for use in pressure transducers, comprising: a supporting substrate plate consisting of a silicon wafer and a glass wafer attached onto said silicon wafer by an electrostatic bonding method, said glass wafer being essentially thinner than the silicon wafer; a first fixed capacitor plate overlying the substrate plate; a silicon plate overlying the substrate plate to encircle the fixed capacitor plate, said silicon plate having a center part thinned to perform as a diaphragm acting as the moving capacitor plate so that well-shaped cavities are formed above and under the diaphragm structure for introduction of the measured pressure medium; a top plate overlying the silicon plate, said top plate consisting of a silicon wafer and of a glass wafer attached onto said silicon wafer and placed against the silicon plate, said glass wafer being essentially thinner than the silicon wafer; and a second capacitor plate overlying the supporting substrate plate between the first capacitor plate and the silicon plate which encircles the first capacitor plate in such a manner so as to essentially enclose the first capactor plate; whereby the second capacitor plate together with the center part of the silicon plate forms a compensating capacitor, whose capacitance (Ct) is essentially less dependent on displacement of the center part of the silicon plate than the capacitance (Cp) formed by the first capacitor plate and the center part of the silicon plate.
Claim 2
Dependent Claim 234 words
A capacitor construction for use in pressure transducers, comprising: a supporting substrate plate consisting of a silicon wafer and a glass wafer attached onto said silicon wafer by an electrostatic bonding method, said glass wafer being essentially thinner than the silicon wafer; a first fixed capacitor plate overlying the substrate plate; a silicon plate overlying the substrate plate to encircle the fixed capacitor plate, said silicon plate having a center part thinned to perform as a diaphragm acting as the moving capacitor plate so that well-shaped cavities are formed above and under the diaphragm structure for introduction of the measured pressure medium; a top plate overlying the silicon plate, said top plate consisting of a silicon wafer and of a glass wafer attached onto said silicon wafer and placed against the silicon plate, said glass wafer being essentially thinner than the silicon wafer; and a second capacitor plate overlying the supporting substrate plate between the first capacitor plate and the silicon plate which encircles the first capacitor plate in such a manner so as to essentially enclose the first capactor plate; whereby the second capacitor plate together with the center part of the silicon plate forms a compensating capacitor, whose capacitance (Ct) is essentially less dependent on displacement of the center part of the silicon plate than the capacitance (Cp) formed by the first capacitor plate and the center part of the silicon plate.
Claim 3
Dependent Claim 25 words
A capacitor construction in accordance with claim 1, wherein the shape of the second capacitor plate is essentially that of the circumference of a rectangle.
Claim 4
Dependent Claim 54 words
A capacitor construction in accordance with claim 1, wherein the top plate is provided with a channel penetrating the silicon wafer and the glass wafer so that the measured pressure medium can be introduced through the channel into an upper cavity formed above the diaphragm in order to permit the measurement of pressure difference.

References Cited (Backward Citations)

US3397278A Cited
US4257274A Cited
US4589054A Cited
US4628403A Cited
US4542435A Cited
US4597027A Cited
US4609966A Cited
US4599906A Cited
US4730496A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-05-15 1992-11-14 1993-05-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-05-15 1996-11-14 1997-05-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-05-15 2000-11-14 2001-05-16 $7700.00 Window Closed / Lapsed

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