US4826756A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature deep ultraviolet resist hardening process using zenon chloride laser
Assignee: Texas Instruments Inc
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Filing: 1987-07-01
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Granted: 1989-05-02
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Expires: 2007-07-01
Abstract
Abstract The disclosure relates to a method for low temperature (less than 120 degrees C.) hardening of photoresist pattern by providing a high power light beam consisting of light having a wavelength of about 300 nanometers and above which leads to crosslinking throughout the resist. A hot plate constant temperature (less than 120 degrees C.) is optionally used to accelerate the crosslinking reaction, thus incrasing throughput.
Inventors
- 👤 Kevin J. Orvek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/2024; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
70 words
A method of hardening a phenolic resin, comprising the steps of: (a) providing a patterned layer comprising phenolic resin; (b) directing a substantially coherent light beam consisting essentially of light having a wavelength greater than about 300 nanometers and less than 320 nanometers through said resin to crosslink all of said resin; while (c) heating said layer to a temperature above ambient temperature and less than about 120 degrees Centigrade.
Claim 2
Independent Claim
70 words
A method of hardening a phenolic resin, comprising the steps of: (a) providing a patterned layer comprising phenolic resin; (b) directing a substantially coherent light beam consisting essentially of light having a wavelength greater than about 300 nanometers and less than 320 nanometers through said resin to crosslink all of said resin; while (c) heating said layer to a temperature above ambient temperature and less than about 120 degrees Centigrade.
Claim 3
Dependent Claim
22 words
The method of claim 1 wherein said light beam is provided by a laser and has a wavelength of substantially 308 nanometers.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein said resin is disposed on a semiconductor substrate.
Claim 5
Dependent Claim
14 words
The method of claim 2 wherein said resin is disposed on a semiconductor substrate.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein said resin is disposed on a semiconductor substrate.
Claim 7
Dependent Claim
14 words
The method of claim 2 wherein said resin is disposed on a semiconductor substrate.
Claim 8
Dependent Claim
12 words
The method of claim 3 wherein said resin is in a photoresist.
Claim 9
Dependent Claim
12 words
The method of claim 4 wherein said resin is in a photoresist.
Claim 10
Dependent Claim
12 words
The method of claim 5 wherein said resin is in a photoresist.
Claim 11
Dependent Claim
12 words
The method of claim 6 wherein said resin is in a photoresist.
Claim 12
Dependent Claim
21 words
The method of claim 7 wherein step (b) includes providing a mirror system to direct said light beam onto said resin.
Claim 13
Dependent Claim
21 words
The method of claim 8 wherein step (b) includes providing a mirror system to direct said light beam onto said resin.
Claim 14
Dependent Claim
21 words
The method of claim 9 wherein step (b) includes providing a mirro system to direct said light beam onto said resin.
Claim 15
Dependent Claim
21 words
The method of claim 10 wherein step (b) includes providing a mirro system to direct said light beam onto said resin.
Claim 16
Dependent Claim
16 words
The method of claim 11 wherein said mirror system includes a beam homogenizer and beam expander.
Claim 17
Dependent Claim
16 words
The method of claim 12 wherein said mirro system includes a beam homogenizer and beam expander.
Claim 18
Dependent Claim
16 words
The method of claim 13 wherein said mirro system includes a beam homogenizer and beam expander.
Claim 19
Dependent Claim
16 words
The method of claim 14 wherein said mirro system includes a beam homogenizer and beam expander.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-05-01 | 1992-10-31 | 1993-05-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-05-01 | 1996-10-31 | 1997-05-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-05-01 | 2000-10-31 | 2001-05-02 | $7700.00 | Window Closed / Lapsed |