Power transistor with self-protection against direct secondary breakdown

Claim 2

A power transistor with self-protection against direct secondary breakdown, comprising a first and a second plurality of elementary transistors having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals mutually connected and forming a common collector terminal, and base terminals connected to at least one current source, and switch means selectively connected to said first plurality of elementary transistors for allowing operation of said first plurality of elementary transistor in a saturation operating region and switching off said first plurality of elementary transistors in a high-voltage operating region, while said second plurality of elementary transistors are active in both said saturation and high voltage operation regions, wherein said switch means comprise switching-off transistors having emitter collector terminals connected respectively to said base and emitter terminals of said first plurality of elementary transistors and base terminals connected to said common collector terminal by means of a respective Zener diode.

Claim 3

A power transistor according to claim 1, wherein said switch means are of the type switching off said first plurality of elementary transistors suddenly when a preset threshold voltage is reached.

Claim 4

A power transistor according to claim 1, wherein each elementary transistor of said first plurality is arranged side-by-side to at least one elementary transistor of said second plurality.

Claim 5

A power transistor according to claim 1, comprising an odd number of elementary transistors arranged in sequence side-by-side, said first plurality of elementary transistors with said switch means being provided at even-numbered positions in said sequence of said elementary transistors.

Claim 6

A power transistor with self-protection against direct secondary breakdown, comprising a first and a second plurality of elementary transistors having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals mutually connected and forming a common collector terminal, and base terminals connected to at least one current source, and switch means selectively connected to said first plurality of elementary transistors for allowing operation of said first plurality of elementary transistors in a saturation operating region and switching off said first plurality of elementary transistors in a high-voltage operating region, while said second plurality of elementary transistors are active in both said saturation and high voltage operation regions, wherein said switch means comprise a secondary emitter region formed in said first plurality of elementary transistor and switching-off transistors having a base terminal connected to said secondary emitter region, and collector and emitter terminals respectively connected to said base and emitter terminals of said first plurality of elementary transistors, said switching-off transistors further comprising a secondary emitter region connected to said common collector terminal through a respective resistor.

Claim 7

A power transistor with self-protection against direct secondary breakdown, comprising a first and a second plurality of elementary transistors having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals mutually connected and forming a common collector terminal, and base terminals connected to at least one current source, and switch means selectively connected to said first plurality of elementary transistors for allowing operation of said first plurality of elementary transistors in a saturation operating region and switching off said first plurality of elementary transistors in a high-voltage operating region, while said second plurality of elementary transistors are active in both said saturation and high voltage operation regions, wherein said switch means comprise a secondary emitter region formed in said first plurality of elementary transistor and switching-off transistors having a base terminal connected to said secondary emitter region, and collector and emitter terminals respectively connected to said base and emitter terminals of said first plurality of elementary transistors, said switching-off transistors further comprising a secondary emitter region connected to said common collector terminal through a respective resistor.

Claim 8

A power transistor according to claim 5, wherein a resistor is provided between said secondary emitter region of said first plurality of elementary transistors and a common emitter terminal.

Claim 9

A power transistor according to claim 6, wherein said second plurality of elementary transistors is comprising current limiting means including secondary emitter regions formed in a respective one of said elementary transistors and an equal plurality of control transistors, and each of said control transistors having a base terminal connected to a respective one of said secondary emitter regions, a collector region connected to a respective one of said base terminals of said elementary transistors and an emitter terminal connected to said common emitter terminal.

Claim 10

A power transistors according to claim 6, wherein said switch means are of the type gradually switching off said first plurality of elementary transistors when a preset threshold voltage is reached.

Claim 11

A power transistor according to claim 5, wherein each elementary transistor of said first plurality of arranged side-by-side to at least one elementary transistor of said second plurality.

Claim 12

A power transistor according to claim 5, comprising an odd number of elementary transistors arranged in sequence side-by-side, said first plurality of elementary transistors with said switch means being provided at even-numbered positions in said sequence of said elementary transistors.