US4818718A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor memory device
Assignee: Hitachi Ltd
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Filing: 1986-10-03
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Granted: 1989-04-04
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Expires: 2006-10-03
Abstract
Abstract A semiconductor integrated circuit device, especially an EPROM (Electrically Programmable Read Only Memory) device which consists of an MIS type memory transistor portion having a floating gate electrode and a control gate electrode on said floating gate electrode, and of an MIS type transistor portion having a gate electrode is formed by patterning the same conductor layer as the floating gate electrode in the periphery of said MIS type memory transistor portion.
Inventors
- 👤 Yasunobu Kosa
- 👤 Kazuhiro Komori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:36
CPC Classifications
H; H10; H10B; H10B41/00; H10B41/40; H10B41/42; H10B41/43; H10B41/44; H10D; H10D64/00; H10D64/01; H10D64/031; H10D64/035; H10D64/60; H10D64/66; H10D64/661
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
274 words
A method of fabricating a semiconductor memory device, including: a memory array portion formed on a semiconductor substrate at a first location of one main surface thereof and including a plurality of MIS memory transistors, said MIS memory transistors being respectively formed at first areas of said first location and each having a floating gate electrode and a control gate electrode overlying said floating gate electrode; and a peripheral circuit portion formed at a second location of said semiconductor substrate different from said first location in association with said memory array portion and including a plurality of MIS transistors and wiring lines, said wiring lines being respectively formed at second areas of said second location, comprising the steps of: forming a first insulating film on said semiconductor substrate at said first location and said second location; forming a first layer of conductive material on said first insulating film at said first location; forming a second insulating film on said first layer of conductive material; forming a second layer of conductive material on said second insulating film at said first location and on said first insulating film at said second location; patterning said second layer of conductive material, said second insulating film, said first layer of conductive material and said first insulating film at said first location using a photoresist film as a mask so as to form said control gate electrode and said floating gate electrode of said memory array portion; and separately, at a different time, patterning said second layer of conductive material at said second location so as to form at least some of said gates and some of said wiring lines.
Claim 2
Independent Claim
274 words
A method of fabricating a semiconductor memory device, including: a memory array portion formed on a semiconductor substrate at a first location of one main surface thereof and including a plurality of MIS memory transistors, said MIS memory transistors being respectively formed at first areas of said first location and each having a floating gate electrode and a control gate electrode overlying said floating gate electrode; and a peripheral circuit portion formed at a second location of said semiconductor substrate different from said first location in association with said memory array portion and including a plurality of MIS transistors and wiring lines, said wiring lines being respectively formed at second areas of said second location, comprising the steps of: forming a first insulating film on said semiconductor substrate at said first location and said second location; forming a first layer of conductive material on said first insulating film at said first location; forming a second insulating film on said first layer of conductive material; forming a second layer of conductive material on said second insulating film at said first location and on said first insulating film at said second location; patterning said second layer of conductive material, said second insulating film, said first layer of conductive material and said first insulating film at said first location using a photoresist film as a mask so as to form said control gate electrode and said floating gate electrode of said memory array portion; and separately, at a different time, patterning said second layer of conductive material at said second location so as to form at least some of said gates and some of said wiring lines.
Claim 3
Dependent Claim
55 words
The method according to claim 1, and further including the step of: also forming said first layer of conductive material on said first insulating film at said second location; and patterning said first layer of conductive material on said first insulating film at said second location so as to form other of said gate electrodes.
Claim 4
Dependent Claim
25 words
The method according to claim 1 or 2, and further including patterning said first layer of conductive material to form some of said wiring lines.
Claim 5
Dependent Claim
18 words
The method according to claim 1, wherein said second layer of conductive material comprises a polycrystalline silicon layer.
Claim 6
Dependent Claim
21 words
The method according to claim 2, comprising forming said first and second polycrystalline silicon layers by the chemical vapor deposition method.
Claim 7
Dependent Claim
18 words
The method according to claim 5, wherein said first and second conductive layers are approximately 3500 Å thick.
Claim 8
Dependent Claim
19 words
The method according to claim 6, wherein said first and second layers of conductive material are doped with phosphorous.
Claim 9
Dependent Claim
24 words
The method according to claim 1, and further including depositing a phosphosilicate glass film over said substrate and patterning said film with contact holes.
Claim 10
Dependent Claim
33 words
The method according to claim 8, and further including forming a further patterned layer of conductive material over said phosphosilicate glass film and extending through said holes to form a further wiring layer.
Claim 11
Independent Claim
267 words
A method of fabricating a semiconductor memory device, including: a memory array portion formed on a semiconductor substrate at a first location of one main surface thereof and including a plurality of MIS memory transistors, said MIS memory transistors being respectively formed at first areas of said first location and each having a floating gate electrode; and a peripheral circuit portion formed at a second location of said semiconductor substrate different from said first location in association with said memory array portion and including a plurality of MIS transistors and wiring lines, said wiring lines being respectively formed at second areas of said second location, comprising the steps of: forming first insulating films on said semiconductor substrate at said first location; forming a first layer of conductive material on said first insulating film at said first location; forming a second insulating film on said first layer of conductive material; forming a third insulating film on said second location; forming a second layer of conductive material on said second insulating film at said first location on said third insulating film at said second location; patterning said second layer of conductive material, said second insulating film, said first layer of conductive material and said first insulating film at said first location using a photoresist film as a mask so as to form said control gate electrode and said floating gate electrode of said memory array portion; and separately, at a different time, patterning said second layer of conductive material at said second location so as to form at least some of said gates and some of said wiring lines.
Claim 12
Independent Claim
267 words
A method of fabricating a semiconductor memory device, including: a memory array portion formed on a semiconductor substrate at a first location of one main surface thereof and including a plurality of MIS memory transistors, said MIS memory transistors being respectively formed at first areas of said first location and each having a floating gate electrode; and a peripheral circuit portion formed at a second location of said semiconductor substrate different from said first location in association with said memory array portion and including a plurality of MIS transistors and wiring lines, said wiring lines being respectively formed at second areas of said second location, comprising the steps of: forming first insulating films on said semiconductor substrate at said first location; forming a first layer of conductive material on said first insulating film at said first location; forming a second insulating film on said first layer of conductive material; forming a third insulating film on said second location; forming a second layer of conductive material on said second insulating film at said first location on said third insulating film at said second location; patterning said second layer of conductive material, said second insulating film, said first layer of conductive material and said first insulating film at said first location using a photoresist film as a mask so as to form said control gate electrode and said floating gate electrode of said memory array portion; and separately, at a different time, patterning said second layer of conductive material at said second location so as to form at least some of said gates and some of said wiring lines.
Claim 13
Dependent Claim
57 words
The method according to claim 10, and further including: also forming said first insulating film and said first layer of conductive material on said first insulating films at said second location; and patterning said first layer of conductive material on said first insulating film at said second location so as to form other of said gate electrodes.
Claim 14
Dependent Claim
25 words
The method according to claim 10 or 11, and further including patterning of first layer of conductive material to form some of said wiring lines.
Claim 15
Dependent Claim
18 words
The method according to claim 10, wherein said second layer of conductive material comprises a polycrystalline silicon layer.
Claim 16
Dependent Claim
21 words
The method according to claim 11, comprising forming said first and second polycrystalline silicon layers by the chemical vapor deposition method.
Claim 17
Dependent Claim
18 words
The method according to claim 14, wherein said first and second conductive layers are approximately 3500 Å thick.
Claim 18
Dependent Claim
19 words
The method according to claim 15, wherein said first and second layers of conductive material are doped with phosphorus.
Claim 19
Dependent Claim
24 words
The method according to claim 10, and further including depositing a phosphosilicate glass film over said substrate and patterning said film with contact holes.
Claim 20
Dependent Claim
33 words
The method according to claim 17, and further including forming a further patterned layer of conductive material over said phosphosilicate glass film and extending through said holes to form a further wiring layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1992-04-03 | 1992-10-03 | 1993-04-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-04-03 | 1996-10-03 | 1997-04-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-04-03 | 2000-10-03 | 2001-04-04 | $7700.00 | Window Closed / Lapsed |