Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
93 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer thereon comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion, Fe 2+ , and at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , with the pH of said solution set at least 7, thereby oxidizing said iron (II) ion, Fe 2+ , to iron (III) ion, Fe 3+ .
Claim 2
Independent Claim
93 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer thereon comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion, Fe 2+ , and at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , with the pH of said solution set at least 7, thereby oxidizing said iron (II) ion, Fe 2+ , to iron (III) ion, Fe 3+ .
Claim 3
Dependent Claim
35 words
The method of preparing a hexagonal ferrite element as claimed in claim 1, wherein the oxidizing of said iron (II) ion to said iron (III) ion is performed by the oxygen contained in the air.
Claim 4
Dependent Claim
36 words
The method of preparing a hexagonal ferrite element as claimed in claim 1, wherein the oxidizing of said iron (II) ion to said iron (III) ion is performed by the oxygen contained in said metal-ion solution.
Claim 5
Dependent Claim
36 words
The method of preparing a hexagonal ferrite element as claimed in claim 1, further comprising the step of subjecting said substrate to a plasma treatment prior to the application of said metal-ion solution to said substrate.
Claim 6
Dependent Claim
51 words
The method of preparing a hexagonal ferrite element as claimed in claim 1, further comprising the step of coating on said substrate a layer made of a material selected from the group consisting of a metal oxide and a metal prior to the application of said metal-ion solution to said substrate.
Claim 7
Dependent Claim
43 words
The method of preparing a hexagonal ferrite element as claimed in claim 1, further comprising the step of subjecting said ferrite film layer to a treatment for promoting the crystallization of said ferrite film layer after the formation of said ferrite film layer.
Claim 8
Independent Claim
119 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion and at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , from which an oxygen gas has been eliminated therefrom, with the pH of said solution set at least 7, and concurrently with or after the application of said metal-ion solution to said substrate, applying to said substrate an oxidizing liquid for oxidizing said iron (II) ion contained in said metal-ion solution to an iron (III) ion.
Claim 9
Independent Claim
119 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion and at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , from which an oxygen gas has been eliminated therefrom, with the pH of said solution set at least 7, and concurrently with or after the application of said metal-ion solution to said substrate, applying to said substrate an oxidizing liquid for oxidizing said iron (II) ion contained in said metal-ion solution to an iron (III) ion.
Claim 10
Dependent Claim
50 words
The method of preparing a hexagonal ferrite element as claimed in claim 7, wherein said oxidizing liquid is selected from the group consisting of a solution comprising mixed gases of O 2 /N 2 , a solution comprising H 2 O 2 , and a solution comprising NaNO 2 .
Claim 11
Dependent Claim
36 words
The method of preparing a hexagonal ferrite element as claimed in claim 7, further comprising the step of subjecting said substrate to a plasma treatment prior to the application of said metal-ion solution to said substrate.
Claim 12
Dependent Claim
51 words
The method of preparing a hexagonal ferrite element as claimed in claim 7, further comprising the step of coating on said substrate a layer made of a material selected from the group consisting of a metal oxide and a metal prior to the application of said metal-ion solution to said substrate.
Claim 13
Dependent Claim
42 words
The method of preparing a hexagonal ferrite element as claimed in claim 7, further comprising the step of subjecting said ferrite layer to a treatment for promoting the crystallization of said ferrite film layer after the formation of said ferrite film layer.
Claim 14
Independent Claim
192 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion, Fe 2+ , at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , and at least one ion selected from the group consisting of Co 2+ , Co 3+ , Mn 2+ , Mn 3+ , Rh 3+ , Rh 4+ , Zn 2+ , Cu 2+ , Ni 2+ , Mo 6+ , Mo 5+ , V 5+ , Mg 2+ , Ga 3+ , Al 3+ , Cr 3+ , In 3+ , Sc 3+ , Gd 3+ , Tb 3+ , Bi 3+ , Y 3+ , Sb 3+ , Ti 4+ , Sn 4+ , Ce 4+ , Zr 4+ , Ta 5+ , Nb 5+ and Ru 4+ , with the pH of said solution set at least 7, thereby oxidizing said iron (II) ion, Fe 2+ , to an iron (III) ion, Fe 3+ .
Claim 15
Independent Claim
192 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate a metal-ion solution comprising an iron (II) ion, Fe 2+ , at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , and at least one ion selected from the group consisting of Co 2+ , Co 3+ , Mn 2+ , Mn 3+ , Rh 3+ , Rh 4+ , Zn 2+ , Cu 2+ , Ni 2+ , Mo 6+ , Mo 5+ , V 5+ , Mg 2+ , Ga 3+ , Al 3+ , Cr 3+ , In 3+ , Sc 3+ , Gd 3+ , Tb 3+ , Bi 3+ , Y 3+ , Sb 3+ , Ti 4+ , Sn 4+ , Ce 4+ , Zr 4+ , Ta 5+ , Nb 5+ and Ru 4+ , with the pH of said solution set at least 7, thereby oxidizing said iron (II) ion, Fe 2+ , to an iron (III) ion, Fe 3+ .
Claim 16
Dependent Claim
35 words
The method of preparing a hexagonal ferrite element as claimed in claim 12, wherein the oxidizing of said iron (II) ion to said iron (III) ion is performed by the oxygen contained in the air.
Claim 17
Dependent Claim
36 words
The method of preparing a hexagonal ferrite element as claimed in claim 12, wherein the oxidizing of said iron (II) ion to said iron (III) ion is performed by the oxygen contained in said metal-ion solution.
Claim 18
Dependent Claim
36 words
The method of preparing a hexagonal ferrite element as claimed in claim 12, further comprising the step of subjecting said substrate to a plasma treatment prior to the application of said metal-ion solution to said substrate.
Claim 19
Dependent Claim
51 words
The method of preparing a hexagonal ferrite element as claimed in claim 12, further comprising the step of coating on said substrate a layer made of a material selected from the group consisting of a metal oxide and a metal prior to the application of said metal-ion solution to said substrate.
Claim 20
Dependent Claim
42 words
The method of preparing a hexagonal ferrite element as claimed in claim 12, further comprising the step of subjecting said ferrite layer to a treatment for promoting the crystallization of said ferrite film layer after the formation of said ferrite film layer.
Claim 21
Independent Claim
219 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate, a metal-ion solution comprising an iron (II) ion, at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , and at least one ion selected from the group consisting of Co 2+ , Co 3+ , Mn 2+ , Mn 3+ , Rh 3+ , Rh 4+ , Zn 2+ , Cu 2+ , Ni 2+ , Mo 6+ , Mo 5+ , V 5+ , Mg 2+ , Ga 3+ , Al 3+ , Cr 3+ , In 3+ , Sc 3+ , Gd 3+ , Tb 3+ , Bi 3+ , Y 3+ , Sb 3+ , Ti 4+ , Sn 4+ , Ce 4+ , Zr 4+ , Ta 5+ , Nb 5+ and Ru 4+ , from which an oxygen gas has been eliminated therefrom, with the pH of said solution set at least 7, and concurrently with or after the application of said metal-ion solution to said substrate, applying to said substrate an oxidizing liquid for oxidizing said iron (II) ion contained in said metal-ion solution to an iron (III) ion.
Claim 22
Independent Claim
219 words
A method of preparing a hexagonal ferrite element comprising a hexagonal ferrite film layer and a substrate for supporting said hexagonal ferrite film layer comprising: applying to said substrate, a metal-ion solution comprising an iron (II) ion, at least one ion selected from the group consisting of Ba 2+ , Sr 2+ , Pb 2+ , La 3+ and Ca 2+ , and at least one ion selected from the group consisting of Co 2+ , Co 3+ , Mn 2+ , Mn 3+ , Rh 3+ , Rh 4+ , Zn 2+ , Cu 2+ , Ni 2+ , Mo 6+ , Mo 5+ , V 5+ , Mg 2+ , Ga 3+ , Al 3+ , Cr 3+ , In 3+ , Sc 3+ , Gd 3+ , Tb 3+ , Bi 3+ , Y 3+ , Sb 3+ , Ti 4+ , Sn 4+ , Ce 4+ , Zr 4+ , Ta 5+ , Nb 5+ and Ru 4+ , from which an oxygen gas has been eliminated therefrom, with the pH of said solution set at least 7, and concurrently with or after the application of said metal-ion solution to said substrate, applying to said substrate an oxidizing liquid for oxidizing said iron (II) ion contained in said metal-ion solution to an iron (III) ion.
Claim 23
Dependent Claim
50 words
The method of preparing a hexagonal ferrite film as claimed in claim 18, wherein said oxidizing agent is selected. from the group consisting of a solution comprising mixed gases of O 2 /N 2 , a solution comprising H 2 O 2 , and a solution comprising NaNO 2 .