US4811352A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated light emitting device
Assignee: KDDI Corp
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Filing: 1988-01-22
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Granted: 1989-03-07
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Expires: 2008-01-22
Abstract
Abstract A semiconductor integrated light emitting device is disclosed which comprises a light emitting waveguide including a light emitting layer, and an external waveguide directly coupled to the light emitting waveguide. In accordance with the present invention, the light emitting waveguide and the external waveguide are mutually laminated in the vicinity of a region where they are directly coupled together. The intensity of the optical output from the light emitting waveguide is modulated in the external waveguide by the electroabsorption effect.
Inventors
- 👤 Masatoshi Suzuki
- 👤 Shigeyuki Akiba
- 👤 Hideaki Tanaka
- 👤 Yukitoshi Kushiro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:21
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; H01S5/125; H01S5/02; H01S5/026; H01S5/0265
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
115 words
A semiconductor integrated light emitting device which comprises a substrate, a light emitting waveguide including a light emitting layer laminated on the substrate, an external waveguide laminated on the substrate directly coupled to the light emitting waveguide and electrodes provided to inject a current to the light emitting layer and to separately apply an electric field to the external waveguide thereby to modulate the intensity of the optical output from the light emitting waveguide by electroabsorption effect, characterized in that the light emitting waveguide and the external waveguide are mutually placed abutting each other and one has an end portion laminated upon the other at a region where they directly abutt and are coupled together.
Claim 2
Dependent Claim
115 words
A semiconductor integrated light emitting device which comprises a substrate, a light emitting waveguide including a light emitting layer laminated on the substrate, an external waveguide laminated on the substrate directly coupled to the light emitting waveguide and electrodes provided to inject a current to the light emitting layer and to separately apply an electric field to the external waveguide thereby to modulate the intensity of the optical output from the light emitting waveguide by electroabsorption effect, characterized in that the light emitting waveguide and the external waveguide are mutually placed abutting each other and one has an end portion laminated upon the other at a region where they directly abutt and are coupled together.
Claim 3
Dependent Claim
25 words
A semiconductor integrated light emitting device according to claim 1, in which the light emitting waveguide comprises a grating having a λ/4 shift portion therein.
Claim 4
Dependent Claim
18 words
A semiconductor integrated light emitting device according to claim 1, in which the external waveguide comprises a grating.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-06 | 1992-09-05 | 1993-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-06 | 1996-09-05 | 1997-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-06 | 2000-09-05 | 2001-03-07 | $7700.00 | Window Closed / Lapsed |