US4811080A
Expired / Lapsed
US
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Monolithic pin diode and method for its manufacture
Assignee: Fei Microwave Inc
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Filing: 1988-02-02
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Granted: 1989-03-07
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Expires: 2008-02-02
Abstract
Abstract A monolithic semiconductor device that provides a diode having PIN diode characteristics. The diode has anode and cathode mesas having contacts in substantially the same plane to facilitate automatic bonding. One of the contacts is insulated from its associated mesa and has a conductive layer that extends between the mesas and through an insulating layer to make direct contact with the substrate, thereby isolating the flow of current from any intervening I regions. The conductive layer may include a portion of narrow cross section, to function as a fuse.
Inventors
- 👤 John G. Richards
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:32
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/422; H10D8/50; H10D84/00; H10D84/201; H10D84/204; H10D84/221
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
227 words
A monolithic PIN diode, comprising: a substrate having an upper surface and defining a first majority charge region; a first mesa defining a first I region at the upper surface of the substrate, the first mesa having an upper surface; a second mesa defining a second I region on the upper surface of the substrate, the second mesa having an upper surface; a second majority charge region formed adjacent to the upper surface of the second mesa, having opposite polarity to that of the first majority charge region and separated therefrom by the second I region; a layer of insulation covering the mesas and the exposed areas of the upper surface of the substrate, the insulation having a first opening located between the first and second mesas to provide access to the substrate, and a second opening to provide access to the upper surface of the second mesa; and an electrically conductive layer for establishing an electrical connection with the substrate, the conductor extending from the substrate through the first opening and thence across the substrate, up a side of the first mesa, and across the upper surface thereof to form a contact, the conductive layer and the contact being electrically isolated by the layer of insulation from the substrate and from the sides and upper surface of the first mesa everywhere except at the first opening.
Claim 2
Dependent Claim
227 words
A monolithic PIN diode, comprising: a substrate having an upper surface and defining a first majority charge region; a first mesa defining a first I region at the upper surface of the substrate, the first mesa having an upper surface; a second mesa defining a second I region on the upper surface of the substrate, the second mesa having an upper surface; a second majority charge region formed adjacent to the upper surface of the second mesa, having opposite polarity to that of the first majority charge region and separated therefrom by the second I region; a layer of insulation covering the mesas and the exposed areas of the upper surface of the substrate, the insulation having a first opening located between the first and second mesas to provide access to the substrate, and a second opening to provide access to the upper surface of the second mesa; and an electrically conductive layer for establishing an electrical connection with the substrate, the conductor extending from the substrate through the first opening and thence across the substrate, up a side of the first mesa, and across the upper surface thereof to form a contact, the conductive layer and the contact being electrically isolated by the layer of insulation from the substrate and from the sides and upper surface of the first mesa everywhere except at the first opening.
Claim 3
Dependent Claim
29 words
A monolithic PIN diode according to claim 1, and further comprising: means for interrupting an electrical current flowing through the conductive layer when the current reaches a predetermined magnitude.
Claim 4
Dependent Claim
26 words
A monolithic PIN diode according to claim 2, wherein: the means for interrupting the current includes a region of small cross section within the conductive layer.
Claim 5
Dependent Claim
57 words
A monolithic PIN diode according to claim 1, and further comprising: a second conductive layer for establishing an electrical connection with the upper surface of the second mesa, the second conductor extending from the upper surface of the second mesa through the second opening, to define a second contact that is substantially coplanar with the first one.
Claim 6
Dependent Claim
206 words
A monolithic PIN diode comprising: an N-type substrate having an upper surface and defining an N region; a cathode mesa defining a first I region on the upper surface of the substrate, the mesa also having an upper surface; an anode mesa defining a second I region on the upper surface of the substrate, the mesa having an anode surface; a P region formed within the anode mesa at its upper surface, and separated from the N region by the second I region; a layer of insulation covering the mesas and the exposed areas of the upper surface of the substrate, the insulation having a cathode opening located between the mesas to provide access to the substrate and an anode opening to provide access to the anode surface; and an electrically conductive layer for establishing an electrical connection with the substrate, the conductive layer extending from the substrate through the cathode opening and thence across the substrate, up a side of the cathode mesa, and across its upper surface to form a cathode contact, the conductive layer and the cathode contact being electrically isolated by the insulation from the cathode mesa, from the upper cathode-mesa surface, and from the substrate everywhere except at the cathode opening.
Claim 7
Dependent Claim
206 words
A monolithic PIN diode comprising: an N-type substrate having an upper surface and defining an N region; a cathode mesa defining a first I region on the upper surface of the substrate, the mesa also having an upper surface; an anode mesa defining a second I region on the upper surface of the substrate, the mesa having an anode surface; a P region formed within the anode mesa at its upper surface, and separated from the N region by the second I region; a layer of insulation covering the mesas and the exposed areas of the upper surface of the substrate, the insulation having a cathode opening located between the mesas to provide access to the substrate and an anode opening to provide access to the anode surface; and an electrically conductive layer for establishing an electrical connection with the substrate, the conductive layer extending from the substrate through the cathode opening and thence across the substrate, up a side of the cathode mesa, and across its upper surface to form a cathode contact, the conductive layer and the cathode contact being electrically isolated by the insulation from the cathode mesa, from the upper cathode-mesa surface, and from the substrate everywhere except at the cathode opening.
Claim 8
Dependent Claim
29 words
A monolithic PIN diode according to claim 5, and further comprising: means for interrupting an electrical current flowing through the conductive layer when that current reaches a predetermined magnitude.
Claim 9
Dependent Claim
23 words
A monolithic PIN diode according to claim 6, wherein: the means for interrupting the current includes a small-cross-section portion of the conductive layer.
Claim 10
Dependent Claim
34 words
A monolithic PIN diode according to claim 5, wherein: a portion of the conductor has a predetermined cross section defining a fuse that melts in response to a current flow of a predetermined magnitude.
Claim 11
Dependent Claim
48 words
A monolithic PIN diode according to claim 5, and further comprising: another conductive layer for establishing electrical connection with the anode surface, the layer extending from the anode surface through the anode opening to form an anode contact lying substantially within the same plane as the cathode contact.
Claim 12
Dependent Claim
138 words
A monolithic PIN diode, comprising: a body of semiconductor material of a first conductivity type for providing a first majority charge region; first and second I regions on a surface of said body in spaced apart relationship; a region of second conductivity type formed adjacent to a surface of one of said I regions, said region of second conductivity type providing a second majority charge region; a first electrical contact connected to said body of semiconductor material, said first contact including a portion extending adjacent to the other of said I regions; a second electrical contact connected to said region of second conductivity type; and means for ensuring that current flowing between the contacts and within the diode passes through no I region other than the one disposed between said body and said region of second conductivity type.
Claim 13
Dependent Claim
138 words
A monolithic PIN diode, comprising: a body of semiconductor material of a first conductivity type for providing a first majority charge region; first and second I regions on a surface of said body in spaced apart relationship; a region of second conductivity type formed adjacent to a surface of one of said I regions, said region of second conductivity type providing a second majority charge region; a first electrical contact connected to said body of semiconductor material, said first contact including a portion extending adjacent to the other of said I regions; a second electrical contact connected to said region of second conductivity type; and means for ensuring that current flowing between the contacts and within the diode passes through no I region other than the one disposed between said body and said region of second conductivity type.
Claim 14
Dependent Claim
30 words
A monolithic PIN diode according to claim 10, further comprising means integral to the diode for interrupting the current flowing between the contacts when that current reaches a predetermined magnitude.
Claim 15
Dependent Claim
34 words
A monolithic PIN diode according to claim 10, wherein the means for interrupting the current includes a conductive region of small cross section between one of the contacts and its associated majority charge region.
References Cited (Backward Citations)
US4301429A
Cited
US4518981A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-06 | 1992-09-05 | 1993-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-06 | 1996-09-05 | 1997-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-06 | 2000-09-05 | 2001-03-07 | $7700.00 | Window Closed / Lapsed |