US4811072A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Individual
•
Filing: 1986-05-13
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Granted: 1989-03-07
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Expires: 2006-05-13
Abstract
Abstract In both lateral and vertical gate turn off devices, the P anode emitter efficiency is controlled by a monolithic N channel device. Bipolar control is effected by connecting an electrode to the region that, in the MOS control mode, would have a dielectric layer disposed between it and the MOS gate. In combination with the P anode emitter control, several structures for controlling the cathode N emitter efficiency are disclosed.
Inventors
- 👤 Robert L. Risberg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 22:25
CPC Classifications
H; H10; H10W; H10W90/00; H10D; H10D18/00; H10D18/60; H10D62/00; H10D62/10; H10D62/13; H10D62/141; H10D62/142; H10D62/148
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
177 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first layer; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first layer adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent a second face thereof opposite said one face; at least one third island region of said first conductivity type formed in said second island region; a source electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material at said opposite face adjacent said second island region; and a second gate electrode facing said second island region at a position between said third island region and said anode electrode.
Claim 2
Dependent Claim
177 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first layer; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first layer adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent a second face thereof opposite said one face; at least one third island region of said first conductivity type formed in said second island region; a source electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material at said opposite face adjacent said second island region; and a second gate electrode facing said second island region at a position between said third island region and said anode electrode.
Claim 3
Dependent Claim
21 words
A semiconductor device as defined in claim 1, wherein said second gate electrode faces said semiconductor body through an insulating material.
Claim 4
Dependent Claim
41 words
A semiconductor device as defined in claim 1, wherein said second island region forms a PN junction with said semiconductor material body which is exposed at said opposite surface of said body, with said second gate electrode spanning said PN junction.
Claim 5
Dependent Claim
23 words
A semiconductor device as defined in claim 1, wherein substantially all of said second gate electrode is disposed over said second island region.
Claim 6
Dependent Claim
66 words
A semiconductor device as defined in claim 4, including an additional third island region formed in said second island region, wherein said anode electrode includes a first anode electrode portion disposed outside of said second island region and a second anode electrode portion contacting said additional third island region, and said second gate electrode disposed between said third island region and said additional third island region.
Claim 7
Dependent Claim
38 words
A semiconductor device as defined in claim 5, wherein said first anode electrode portion forms a Schottky contact with said semiconductor material body and said second anode electrode forms an ohmic contact with said additional third island region.
Claim 8
Dependent Claim
22 words
A semiconductor device as defined in claim 1, wherein said first gate electrode is in direct electrical contact with said first layer.
Claim 9
Dependent Claim
21 words
A semiconductor device as defined in claim 1, wherein said first gate electrode faces said first layer through an insulating material.
Claim 10
Dependent Claim
53 words
A semiconductor device as defined in claim 8, wherein said first layer forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first layer and said first island region.
Claim 11
Dependent Claim
22 words
A semiconductor device as defined in claim 5, wherein said first gate electrode is in direct electrical contact with said first layer.
Claim 12
Dependent Claim
21 words
A semiconductor device as defined in claim 5 wherein said first gate electrode faces said first layer through an insulating material.
Claim 13
Dependent Claim
53 words
A semiconductor device as defined in claim 11, wherein said first layer forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first layer and said first island region.
Claim 14
Dependent Claim
167 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type: a first layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first layer; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first layer adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent a second face thereof opposite said one face; at least one third island region of said first conductivity type formed in said second island region; an emitter electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material at said opposite surface adjacent said second island region; and a base electrode in electrical contact with said second island region.
Claim 15
Dependent Claim
167 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type: a first layer of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first layer; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first layer adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent a second face thereof opposite said one face; at least one third island region of said first conductivity type formed in said second island region; an emitter electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material at said opposite surface adjacent said second island region; and a base electrode in electrical contact with said second island region.
Claim 16
Dependent Claim
22 words
A semiconductor device as defined in claim 13, wherein said first gate electrode is in direct electrical contact with said first layer.
Claim 17
Dependent Claim
21 words
A semiconductor device as defined in claim 13 wherein said first gate electrode faces said first layer through an insulating material.
Claim 18
Dependent Claim
53 words
A semiconductor device as defined in claim 15, wherein said first layer forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first layer and said first island region.
Claim 19
Dependent Claim
162 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming PN junction therewith; at least one first island region of said first conductivity type formed in said first region adjacent a first surface thereof; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first region; at least one second island region of said second conductivity type in said semiconductor body adjacent said first surface; at least one third island region of said first conductivity type formed in said second island region; a source electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material; and a second gate electrode facing said second island region at a position between said third island region and said anode electrode.
Claim 20
Dependent Claim
162 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming PN junction therewith; at least one first island region of said first conductivity type formed in said first region adjacent a first surface thereof; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first region; at least one second island region of said second conductivity type in said semiconductor body adjacent said first surface; at least one third island region of said first conductivity type formed in said second island region; a source electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material; and a second gate electrode facing said second island region at a position between said third island region and said anode electrode.
Claim 21
Dependent Claim
21 words
A semiconductor device as defined in claim 17, wherein said second gate electrode faces said semiconductor body through an insulating material.
Claim 22
Dependent Claim
40 words
A semiconductor device as defined in claim 17, wherein said second island region forms a PN junction with said semiconductor material body which is exposed at said surface of said body, with said second gate electrode spanning said PN junction.
Claim 23
Dependent Claim
23 words
A semiconductor device as defined in claim 17, wherein substantially all of said second gate electrode is disposed over said second island region.
Claim 24
Dependent Claim
66 words
A semiconductor device as defined in claim 20, including an additional third island region formed in said second island region, wherein said anode electrode includes a first anode electrode portion disposed outside of said second island region and a second anode electrode portion contacting said additional third island region, and said second gate electrode disposed between said third island region and said additional third island region.
Claim 25
Dependent Claim
38 words
A semiconductor device as defined in claim 21, wherein said first anode electrode portion forms a Schottky contact with said semiconductor material body and said second anode electrode forms an ohmic contact with said additional third island region.
Claim 26
Dependent Claim
22 words
A semiconductor device as defined in claim 17, wherein said first gate electrode is in direct electrical contact with said first region.
Claim 27
Dependent Claim
21 words
A semiconductor device as defined in claim 17, wherein said first gate electrode faces said first region through an insulating material.
Claim 28
Dependent Claim
53 words
A semiconductor device as defined in claim 24, wherein said first region forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first region and said first island region.
Claim 29
Dependent Claim
22 words
A semiconductor device as defined in claim 21, wherein said first gate electrode is in direct electrical contact with said first region.
Claim 30
Dependent Claim
21 words
A semiconductor device as defined in claim 21 wherein said first gate electrode faces said first region through an insulating material.
Claim 31
Dependent Claim
53 words
A semiconductor device as defined in claim 27, wherein said first region forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first region and said first island region.
Claim 32
Dependent Claim
159 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first region; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first region adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent said one face thereof; at least one third island region of said first conductivity type formed in said second island region; an emitter electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material adjacent said second island region; and a base electrode in electrical contact with said second island region.
Claim 33
Dependent Claim
159 words
A semiconductor device, comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first region; a cathode electrode in electrical contact with said first island region; a first gate electrode facing said first region adjacent said first island region; at least one second island region of said second conductivity type in said semiconductor body adjacent said one face thereof; at least one third island region of said first conductivity type formed in said second island region; an emitter electrode in electrical contact with said second and third island regions; an anode electrode in electrical contact with said body of semiconductor material adjacent said second island region; and a base electrode in electrical contact with said second island region.
Claim 34
Dependent Claim
22 words
A semiconductor device as defined in claim 29, wherein said first gate electrode is in direct electrical contact with said first region.
Claim 35
Dependent Claim
21 words
A semiconductor device as defined in claim 29 wherein said first gate electrode faces said first region through an insulating material.
Claim 36
Dependent Claim
53 words
A semiconductor device as defined in claim 31, wherein said first region forms a PN junction with said semiconductor material body which is exposed at said one surface, with said first gate electrode extending across said PN junction and facing all of said semiconductor body, said first region and said first island region.
Claim 37
Dependent Claim
165 words
A semiconductor device for selectively conducting current between first and second electrodes, said device comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first region; a first electrode in electrical contact with said first region and said first island region; a first gate electrode facing said first region adjacent said first island region; at least one second region of said second conductivity type formed in said semiconductor body at a face of said semiconductor body opposite said one face; at least one second island region of said first conductivity type formed in said second region; a second electrode in electrical contact with said second region and second island region; and a second gate electrode facing said second region adjacent said second island region.
Claim 38
Dependent Claim
165 words
A semiconductor device for selectively conducting current between first and second electrodes, said device comprising: a body of semiconductor material of a first conductivity type; a first region of semiconductor material of a second conductivity type on one face of said body of semiconductor material and forming a PN junction therewith; at least one first island region of said first conductivity type formed in said first region; a first electrode in electrical contact with said first region and said first island region; a first gate electrode facing said first region adjacent said first island region; at least one second region of said second conductivity type formed in said semiconductor body at a face of said semiconductor body opposite said one face; at least one second island region of said first conductivity type formed in said second region; a second electrode in electrical contact with said second region and second island region; and a second gate electrode facing said second region adjacent said second island region.
Claim 39
Dependent Claim
24 words
A semiconductor device as defined in claim 33, wherein said first and second gate electrodes face their respective first and second regions through insulating
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-06 | 1992-09-05 | 1993-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-06 | 1996-09-05 | 1997-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-06 | 2000-09-05 | 2001-03-07 | $7700.00 | Window Closed / Lapsed |