US4811069A
Expired / Lapsed
US
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Photoelectric conversion device
Assignee: Oki Electric Industry Co Ltd
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Filing: 1988-02-22
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Granted: 1989-03-07
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Expires: 2008-02-22
Abstract
Abstract A photoelectric conversion device comprises a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, such as Cr or Ni, a transparent electrode formed of ITO or the like, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode. A bias voltage is applied across the metallic electrode and the transparent electrode so that the metallic electrode is biased to a negative potential relative to the transparent electrode. A Schottky barrier formed in the interface between the metallic electrode and the i-type hydrogenated amorphous silicon layer is used as an electron blocking layer. Thus, the dark current is suppressed on a low level and the photoelectric conversion device is able to operate at a high S/N ratio.
Inventors
- 👤 Hiroaki Kakinuma
- 👤 Yukio Kasuya
- 👤 Masaaki Sakamoto
- 👤 Tsukasa Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:55
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/227
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
105 words
A photoelectric conversion device comprising: a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, a transparent electrode, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode; and bias voltage applying means for applying a bias voltage across the metallic electrode and the transparent electrode so as to bias the metallic electrode to a negative potential relative to the transparent electrode; wherein a Schottky barrier formed in the interface between the i-type hydrogenated amorphous silicon layer and the metallic electrode is used as an electron blocking layer.
Claim 2
Dependent Claim
105 words
A photoelectric conversion device comprising: a photodiode comprising a metallic electrode formed of a metal capable of forming a Schottky junction together with amorphous silicon, a transparent electrode, and an i-type hydrogenated amorphous silicon layer sandwiched in between the metallic electrode and the transparent electrode; and bias voltage applying means for applying a bias voltage across the metallic electrode and the transparent electrode so as to bias the metallic electrode to a negative potential relative to the transparent electrode; wherein a Schottky barrier formed in the interface between the i-type hydrogenated amorphous silicon layer and the metallic electrode is used as an electron blocking layer.
Claim 3
Dependent Claim
33 words
A photoelectric conversion device according to claim 1, wherein said metallic electrode is formed of Cr, Ni or a Ni-Cr alloy, and said transparent electrode is formed of ITO, SnO 2 or ZnO.
Claim 4
Dependent Claim
17 words
A photoelectric conversion device according to claim 1, wherein said photodiode is formed on an insulating substrate.
Claim 5
Dependent Claim
34 words
A photoelectric conversion device according to claim 1, wherein said metallic electrode is formed of Cr, and thickness of said i-type hydrogenated amorphous silicon layer is in the range of 0.6 to 3 μm.
Claim 6
Dependent Claim
35 words
A photoelectric conversion device according to claim 1, wherein said metallic electrode is formed of Ni, and the thickness of said i-type hydrogenated amorphous silicon layer is in the range of 1 to 3 μm.
Claim 7
Dependent Claim
36 words
A photoelectric conversion device according to claim 1, wherein said i-type hydrogenated amorphous silicon layer is doped with boron in the gaseous doping ratio (B 2 H 6 )/(SiH 4 ) of 0.5 to 10 ppm.
Claim 8
Dependent Claim
35 words
A photoelectric conversion device according to claim 3, wherein said metallic electrode is divided into a plurality of individual metallic electrodes so that said photodiode is equivalent to an array of a plurality of photodiodes.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-06 | 1992-09-05 | 1993-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-06 | 1996-09-05 | 1997-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-06 | 2000-09-05 | 2001-03-07 | $7700.00 | Window Closed / Lapsed |