Abstract The present invention provides a vertical punch-through cell comprising a silicon substrate, an epitaxial silicon layer overlying the substrate, an N+ buried column line formed at the interface between the substrate and the epitaxial layer, an N+ diffusion region formed above and spaced apart from the buried column line at the surface of the epitaxial layer, a field oxide layer formed over the epitaxial layer and having an contact opening formed therein over the N+ diffusion region, a polysilicon layer formed on the surface of the field oxide layer to extend through the contact opening to make contact with the N diffusion region, a layer of dielectric material formed over the polysilicon layer, and a layer of conductive material formed over the dielectric material.
A vertical punch-through cell comprising: (a) a silicon substrate; ( b) an epitaxial silicon layer overlying the substrate; (c) an N+ buried column line formed at the interface between the substrate and the epitaxial layer; (d) an N+ diffusion region formed above and spaced apart from the buried column line at the surface of the epitaxial layer; (e) a field oxide layer formed over the epitaxial layer and having a contact opening formed therein over the N+ diffusion region; (f) a polysilicon layer formed on the surface of the field oxide layer to extend through the contact opening to make contact with the N+ diffusion region; (g) a layer of dielectric material formed over the polysilicon layer; and (h) a layer of conductive material formed over the layer dielectric material.
Claim 2
Dependent Claim
130 words
A vertical punch-through cell comprising: (a) a silicon substrate; ( b) an epitaxial silicon layer overlying the substrate; (c) an N+ buried column line formed at the interface between the substrate and the epitaxial layer; (d) an N+ diffusion region formed above and spaced apart from the buried column line at the surface of the epitaxial layer; (e) a field oxide layer formed over the epitaxial layer and having a contact opening formed therein over the N+ diffusion region; (f) a polysilicon layer formed on the surface of the field oxide layer to extend through the contact opening to make contact with the N+ diffusion region; (g) a layer of dielectric material formed over the polysilicon layer; and (h) a layer of conductive material formed over the layer dielectric material.
Claim 3
Dependent Claim
15 words
A vertical punch-through cell as in claim 1 wherein the dielectric material is silicon nitride.
Claim 4
Dependent Claim
14 words
A vertical punch-through cell as in claim 2 wherein the conductive material is metal.
Claim 5
Dependent Claim
14 words
A vertical punch-through cell as in claim 2 wherein the conductive material is polysilicon.