A semiconductor laser device

Claim 2

A semiconductor laser device for stabilizing the wavelength of a semiconductor laser beam which comprises: (a) a base plate having a top surface; (b) a mask layer having a predetermined pattern provided on said top surface of said base plate; (c) a recessed portion formed by etching said base plate through said pattern of said mask layer; (d) a projecting portion of said mask layer extending over a part of said recessed portion; and (e) semiconductor laser chip means having a first side emitting a light beam therefrom and a second side; wherein the light beam emitted from said first side of said semiconductor chip means returns thereto after being reflected by a part of said recessed portion and a part of said projecting portion and wherein the optical path of said light beam is in an external resonator comprising both the first and second sides of said semiconductor laser chip means and said projecting portion of said mask layer.

Claim 3

A device according to claim 1, in which said semiconductor laser chip means is disposed within said recessed portion.

Claim 4

A device according to claim 2, in which said semiconductor laser chip means is disposed on a bottom portion of said recessed portion.

Claim 5

A device according to claim 1, in which said part of said recessed portion comprises a first inclined plane formed by etching the base plate.

Claim 6

A device according to claim 4, in which said first inclined plane comprises a two-dimensionally curved plane.

Claim 7

A device according to claim 1, in which said projecting portion is formed by undercutting in the course of said etching of the base plate.

Claim 8

A device according to claim 1, in which said projecting portion and said side of said semiconductor laser chip means serve as portions of a resonator means.

Claim 9

A device according to claim 1, which includes a reflective material provided at least at one of said part of said projecting portion and said part of said recessed portion.

Claim 10

A device according to claim 1, in which said mask layer comprises a dielectric layer and a metallic layer formed thereon, wherein the optical thickness of said dielectric layer approximates a half wavelength of said semiconductor laser chip means.

Claim 12

A semiconductor laser device which comprises: (a) a base plate having a top surface; (b) a mask layer having a predetermined pattern provided on said top surface of said base plate; (c) a recessed portion which is formed on said base plate by etching using said pattern of the mask layer, said recessed portion having a first inclined plane for reflection; (d) first projecting portion extending from a part of said mask layer toward and partly over said recessed portion; (e) a lens means formed on said first projecting portion; and (f) semiconductor laser chip means disposed on said recessed portion and having a first side emitting a light beam therefrom; wherein light beam emitted from said first side of said semiconductor laser chip means is reflected by said first inclined plane of said recessed portion at a predetermined angle and passes through said lens means to produce an output light beam

Claim 13

A semiconductor laser device which comprises: (a) a base plate having a top surface; (b) a mask layer having a predetermined pattern provided on said top surface of said base plate; (c) a recessed portion which is formed on said base plate by etching using said pattern of the mask layer, said recessed portion having a first inclined plane for reflection; (d) first projecting portion extending from a part of said mask layer toward and partly over said recessed portion; (e) a lens means formed on said first projecting portion; and (f) semiconductor laser chip means disposed on said recessed portion and having a first side emitting a light beam therefrom; wherein light beam emitted from said first side of said semiconductor laser chip means is reflected by said first inclined plane of said recessed portion at a predetermined angle and passes through said lens means to produce an output light beam

Claim 14

A semiconductor laser device which comprises: (a) a base plate having a top surface; (b) a mask layer having a predetermined pattern provided on said top surface of said base plate; (c) a recessed portion which is formed in said base plate by etching using said pattern of the mask layer, said recessed portion having a first inclined plane and a second inclined plane respectively for reflection, and said second inclined plane being opposite said first inclined plane; (d) a first projecting portion extending from a part of said mask layer toward and partly over said recessed portion; (e) a lens means formed on said first projecting portion; (f) a semiconductor laser chip means disposed on said recessed portion and having a first side and a second side respectively emitting a light beam therefrom, said second side being opposite said first side; and (g) a second projecting portion extending from a part of said mask layer opposite said first projecting portion toward and partly over said recessed portion; wherein light beam emitted from said first side of said semiconductor laser chip means is reflected by said first inclined plane of said recessed portion at a predetermined angle and passes through said lens means to produce an output light beam, and at the same time, light is emitted from said second side of said semiconductor laser chip means and returns thereto after being reflected by said second inclined plane and said second projecting portion, and wherein the optical path of said light is in an external resonator comprising both sides of said semiconductor laser chip means and said first and second projecting portions of said mask layer.

Claim 15

A semiconductor laser device which comprises: (a) a base plate having a top surface; (b) a mask layer having a predetermined pattern provided on said top surface of said base plate; (c) a recessed portion which is formed in said base plate by etching using said pattern of the mask layer, said recessed portion having a first inclined plane and a second inclined plane respectively for reflection, and said second inclined plane being opposite said first inclined plane; (d) a first projecting portion extending from a part of said mask layer toward and partly over said recessed portion; (e) a lens means formed on said first projecting portion; (f) a semiconductor laser chip means disposed on said recessed portion and having a first side and a second side respectively emitting a light beam therefrom, said second side being opposite said first side; and (g) a second projecting portion extending from a part of said mask layer opposite said first projecting portion toward and partly over said recessed portion; wherein light beam emitted from said first side of said semiconductor laser chip means is reflected by said first inclined plane of said recessed portion at a predetermined angle and passes through said lens means to produce an output light beam, and at the same time, light is emitted from said second side of said semiconductor laser chip means and returns thereto after being reflected by said second inclined plane and said second projecting portion, and wherein the optical path of said light is in an external resonator comprising both sides of said semiconductor laser chip means and said first and second projecting portions of said mask layer.

Claim 16

A semiconductor laser device according to claim 12, in which said lens means comprises a Fresnel lens.

Claim 17

A semiconductor laser device according to claim 12, in which said lens means comprises a grating lens.

Claim 18

A semiconductor laser device according to claim 12, in which said lens means comprises dielectric material.

Claim 19

A semiconductor laser device according to claim 11, in which said lens means comprises a Fresenel lens.

Claim 20

A semiconductor laser device according to claim 11, in which said lens means comprises a grating lens.

Claim 21

A semiconductor laser device according to claim 11, in which said lens means comprises dielectric material.