Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
79 words
A connector structure comprising: an electrically conductive plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; an electrically conductive film formed on the inner wall of at least one of the through holes which is not covered with an electrically insulating film.
Claim 2
Dependent Claim
79 words
A connector structure comprising: an electrically conductive plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; an electrically conductive film formed on the inner wall of at least one of the through holes which is not covered with an electrically insulating film.
Claim 3
Dependent Claim
45 words
A connector structure according to claim 1, in which the thickness of the insulating film on the inner wall of at least one of the through holes is less than 1/3 as that of the insulating film on the inner wall of other through holes.
Claim 4
Dependent Claim
28 words
A connector structure according to claim 1, in which at least one of the electrically insulating film on the inner wall of through holes is a ferroelectric film.
Claim 5
Dependent Claim
19 words
A connector structure according to claim 1, in which said electrically conductive material is a low melting point metal.
Claim 6
Dependent Claim
24 words
A connector structure according to claim 1, in which said electrically insulating film on the inner wall of through holes is an oxide film.
Claim 7
Dependent Claim
31 words
A connector structure according to claim 1, in which said electrically insulating film on the inner wall of through hole said at least one is made of a high molecular compound.
Claim 8
Dependent Claim
92 words
A connector structure comprising: an electrically conductive plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; an electrically conductive material provided within at least one of those of said plurality of through holes; and an electrically conductive film formed on at least one of the electrically insulating film on the inner wall of through holes.
Claim 9
Dependent Claim
92 words
A connector structure comprising: an electrically conductive plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; an electrically conductive material provided within at least one of those of said plurality of through holes; and an electrically conductive film formed on at least one of the electrically insulating film on the inner wall of through holes.
Claim 10
Dependent Claim
96 words
A connector structure comprising: an electrically conductive plate made of a material having a temperature coefficient substantially identical with that of a semiconductor substrate in which semiconductor devices may be formed, said plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; and an electrically conductive material provided within at least one of those of said plurality of through holes.
Claim 11
Dependent Claim
96 words
A connector structure comprising: an electrically conductive plate made of a material having a temperature coefficient substantially identical with that of a semiconductor substrate in which semiconductor devices may be formed, said plate having a plurality of through holes formed therein; an electrically insulating film formed on the inner wall of at least one of said plurality of through holes with at least one of said plurality of through holes being not covered with an electrically insulating film; and an electrically conductive material provided within at least one of those of said plurality of through holes.