Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
232 words
A charge-coupled device comprising: a substrate of semiconductor material having at least first and second buried channels formed therein, at least two sets of clock electrodes overlying both the first and second buried channels, so that by application of predetermined potential levels to the clock electrodes, electrical charge may be propagated in controlled fashion along each of the buried channels towards an output end thereof, a floating diffusion at the output end of each buried channel for receiving charge propagated along the channel, output transistors associated with the buried channels respectively and each having a control electrode connected to the floating diffusion of the associated buried channel, an output diffusion formed in the substrate at a location between the floating diffusions of the channels and the control electrodes of the transistors and extending transversely of the channels, a reset gate associated with each channel and lying over the substrate between the floating diffusion of the associated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion and the output diffusion, and a reset bus extending over the substrate on the opposite side of the floating diffusions from the reset gate, the reset bus having a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.
Claim 2
Dependent Claim
232 words
A charge-coupled device comprising: a substrate of semiconductor material having at least first and second buried channels formed therein, at least two sets of clock electrodes overlying both the first and second buried channels, so that by application of predetermined potential levels to the clock electrodes, electrical charge may be propagated in controlled fashion along each of the buried channels towards an output end thereof, a floating diffusion at the output end of each buried channel for receiving charge propagated along the channel, output transistors associated with the buried channels respectively and each having a control electrode connected to the floating diffusion of the associated buried channel, an output diffusion formed in the substrate at a location between the floating diffusions of the channels and the control electrodes of the transistors and extending transversely of the channels, a reset gate associated with each channel and lying over the substrate between the floating diffusion of the associated channel and the output diffusion, so that by application of a predetermined potential to the reset gate a conductive channel is formed in the substrate between the floating diffusion and the output diffusion, and a reset bus extending over the substrate on the opposite side of the floating diffusions from the reset gate, the reset bus having a bus extension which extends over the substrate between the floating diffusions and is connected to the reset gates.
Claim 3
Dependent Claim
37 words
A charge-coupled device according to claim 1, further comprising a sum well gate which extends over the substrate between the floating diffusions and the clock electrodes, and wherein the reset bus extends over the sum well gate.
Claim 4
Dependent Claim
32 words
A charge-coupled device according to claim 1, comprising a channel stop region which is located between the first and second channels, and wherein the bus extension extends over the channel stop region.
Claim 5
Dependent Claim
56 words
A charge-coupled device according to claim 1, comprising a floating diffusion bus associated with each buried channel and connecting the floating diffusion associated with the buried channel to the control electrode of the output transistor associated with the buried channel, the floating diffusion buses extending substantially parallel to and in spaced relationship with the bus extensions.