Integrated circuit with improved monitoring function by use of built-in elements

Claim 2

A semiconductor integrated circuit comprising: a semiconductor chip, a functional circuit formed on said semiconductor chip, said functional circuit including at least one functional element, a plurality of bonding pads formed on said semiconductor chip and electrically connected to said functional circuit, at least one reference element formed on said semiconductor chip, the type of said reference element being analogous to that of said functional element, and switching means coupled between said reference element and one of said bonding pads, said functional circuit operating by a given range of voltages, said switching means assuming a conducting state only when a voltage outside said given range of voltages is applied to said one bonding pad.

Claim 3

The integrated circuit according to claim 1, in which said switching means includes a zener diode.

Claim 4

The integrated circuit according to claim 1, in which said functional element and said reference element are transistors.

Claim 5

The integrated circuit according to claim 1, in which said functional circuit includes a DTL circuit having an input coupled to said one of said bonding pads.

Claim 6

The integrated circuit according to claim 1, in which said reference element is formed on the area near said one of said bonding pads.

Claim 7

A semiconductor integrated circuit comprising: a semiconductor chip, a functional circuit formed on said semiconductor chip, said functional circuit including a plurality of elements and operating by a given range of voltages, a plurality of bonding pads formed on said chip, said functional circuit being electrically connected to said bonding pads, a plurality of reference elements formed on said semiconductor chip, and a plurality of switching means each coupled between each one of said reference elements and one of said bonding pads, said switching means assuming a non-conductive state when a voltage applied to the associated one of said bonding pads is within said given range of voltages and assuming a conductive state when a voltage applied to said associated one of said bonding pads is outside said given range of voltages.

Claim 8

A semiconductor integrated circuit comprising: a semiconductor chip, a functional circuit formed on said semiconductor chip, said functional circuit including a plurality of elements and operating by a given range of voltages, a plurality of bonding pads formed on said chip, said functional circuit being electrically connected to said bonding pads, a plurality of reference elements formed on said semiconductor chip, and a plurality of switching means each coupled between each one of said reference elements and one of said bonding pads, said switching means assuming a non-conductive state when a voltage applied to the associated one of said bonding pads is within said given range of voltages and assuming a conductive state when a voltage applied to said associated one of said bonding pads is outside said given range of voltages.

Claim 9

The integrated circuit according to claim 6, in which each of said switching means includes a diode.

Claim 10

The integrated circuit according to claim 6, in which said functional circuit includes a DTL circuit having an input coupled to one of said bonding pads to which one of said reference elements is coupled through one of said switching means.

Claim 11

The integrated circuit according to claim 7, in which said diode is formed of a base-emitter junction of a bipolar transistor.

Claim 12

The integrated circuit according to claim 6, in which said elements in said functional circuit and said reference elements include transistors and resistors.

Claim 13

A semiconductor integrated circuit comprising: a semiconductor chip, a plurality of functional elements formed on said semiconductor chip, a plurality of bonding pads formed on said semiconductor chip, means for connecting a part of said functional elements to said bonding pads, said functional elements being operated by a given range of voltages applied to said pads, a plurality of reference elements formed on said semiconductor chip, and a plurality of switching means each coupled between one of said reference elements and one of said bonding pads, each of said switching means assuming a non-conductive state when a voltage within said given range is applied to the associated bonding pad and a conductive state when a voltage outside said given range is applied to said associated bonding pad.

Claim 14

A semiconductor integrated circuit comprising: a semiconductor chip, a plurality of functional elements formed on said semiconductor chip, a plurality of bonding pads formed on said semiconductor chip, means for connecting a part of said functional elements to said bonding pads, said functional elements being operated by a given range of voltages applied to said pads, a plurality of reference elements formed on said semiconductor chip, and a plurality of switching means each coupled between one of said reference elements and one of said bonding pads, each of said switching means assuming a non-conductive state when a voltage within said given range is applied to the associated bonding pad and a conductive state when a voltage outside said given range is applied to said associated bonding pad.

Claim 15

The integrated circuit according to claim 11, in which each of said switching means includes a diode.

Claim 16

A semiconductor integrated circuit comprising: a semiconductor chip, a functional circuit formed on said semiconductor chip, said functional circuit including at least one functional element, a plurality of bonding pads formed on said semiconductor chip and electrically connected to said functional circuit, at least one reference element formed on said semiconductor chip, the type of said reference element being analogous to that of said functional element and having a correlative parameter to said functional element, and switching means coupled between said reference element and one of said bonding pads, said functional circuit operating by a given range of voltages, said switching means assuming a conducting state only when a voltage outside said given range of voltages is applied to said one bonding pad, whereby a parameter of said functional element is predicted by measuring the parameter of said reference element by applying the voltage outside said given range of voltages to said one bonding pad.

Claim 17

A semiconductor integrated circuit comprising: a semiconductor chip, a functional circuit formed on said semiconductor chip, said functional circuit including at least one functional element, a plurality of bonding pads formed on said semiconductor chip and electrically connected to said functional circuit, at least one reference element formed on said semiconductor chip, the type of said reference element being analogous to that of said functional element and having a correlative parameter to said functional element, and switching means coupled between said reference element and one of said bonding pads, said functional circuit operating by a given range of voltages, said switching means assuming a conducting state only when a voltage outside said given range of voltages is applied to said one bonding pad, whereby a parameter of said functional element is predicted by measuring the parameter of said reference element by applying the voltage outside said given range of voltages to said one bonding pad.

Claim 18

The integrated circuit according to claim 13, in which said switching means includes a zener diode.

Claim 19

The integrated circuit according to claim 14, in which said functional element and said reference element are transistors.

Claim 20

The integrated circuit according to claim 14, in which said functional circuit includes a DTL circuit having an input coupled to said one of said bonding pads.

Claim 21

A semiconductor integrated circuit comprising: a semiconductor chip, a plurality of functional bipolar transistors formed on said semiconductor chip, a plurality of bonding pads formed on said semiconductor chip, means for connecting a part of said functional bipolar transistors to said bonding pads, said functional bipolar transistors being operated by a given range of voltages applied to said bonding pads, a reference bipolar transistor formed on said semiconductor chip, a first switching means coupled between a collector-emitter path of said reference transistor and one of said bonding pads, and a second switching means coupled between a base of said reference transistor and another of said bonding pads, each of said switching means assuming a non-conductive state when a voltage within said given range is applied to the associated bonding pad and a conductive state when a voltage outside said given range is applied to said associated bonding pad.

Claim 22

A semiconductor integrated circuit comprising: a semiconductor chip, a plurality of functional bipolar transistors formed on said semiconductor chip, a plurality of bonding pads formed on said semiconductor chip, means for connecting a part of said functional bipolar transistors to said bonding pads, said functional bipolar transistors being operated by a given range of voltages applied to said bonding pads, a reference bipolar transistor formed on said semiconductor chip, a first switching means coupled between a collector-emitter path of said reference transistor and one of said bonding pads, and a second switching means coupled between a base of said reference transistor and another of said bonding pads, each of said switching means assuming a non-conductive state when a voltage within said given range is applied to the associated bonding pad and a conductive state when a voltage outside said given range is applied to said associated bonding pad.

Claim 23

The integrated circuit according to claim 17, in which each of said switching means includes a diode.