US4792960A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Sharp Corp
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Filing: 1985-04-23
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Granted: 1988-12-20
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Expires: 2005-04-23
Abstract
Abstract A semiconductor laser comprising a substrate for crystal growth having a striped channel, an active layer for laser oscillation, a cladding layer containing Mg which is in contact with said active layer at the side of said striped channel substrate.
Inventors
- 👤 Saburo Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Taiji Morimoto
- 👤 Seiki Yano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:32
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/30; H01S5/32; H01S5/323; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/2237; H01S5/305; H01S5/3054; H01S5/3211; H01S5/32308
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
133 words
In a semiconductor laser for laser oscillation at a short wavelength of visible light and of the type including a substrate having a striped channel in one surface thereof, an active layer for laser oscillation disposed on said one surface of said substrate above said striped channel, and a cladding layer containing Mg which is in contact with said active layer and disposed between said active layer and said one surface of said substrate; the improvement wherein a filler layer containing Mg is disposed between said one surface of said substrate having said striped channel and one surface of said cladding layer, contacts said one surface of said cladding layer, and fills said channel in said substrate, with the Mg content of said filler layer being less than that of said cladding layer.
Claim 2
Dependent Claim
133 words
In a semiconductor laser for laser oscillation at a short wavelength of visible light and of the type including a substrate having a striped channel in one surface thereof, an active layer for laser oscillation disposed on said one surface of said substrate above said striped channel, and a cladding layer containing Mg which is in contact with said active layer and disposed between said active layer and said one surface of said substrate; the improvement wherein a filler layer containing Mg is disposed between said one surface of said substrate having said striped channel and one surface of said cladding layer, contacts said one surface of said cladding layer, and fills said channel in said substrate, with the Mg content of said filler layer being less than that of said cladding layer.
Claim 3
Dependent Claim
19 words
A semiconductor laser as defined in claim 1 wherein said active layer and said cladding layer are substantially planar.
Claim 4
Dependent Claim
50 words
A semiconductor laser as defined in claim 1 wherein said semiconductor laser further includes a further cladding layer disposed on the opposite surface of said active layer, a cap layer formed on said further cladding layer, and first and second electrodes for said substrate and for said cap layer, respectively.
Claim 5
Dependent Claim
32 words
A semiconductor laser as defined in claim 3 further comprising a current blocking layer disposed on said one surface of said substrate beneath said filler layer and through which said channel extends.
Claim 6
Dependent Claim
61 words
A semiconductor laser as defined in claim 4 wherein: said substrate and said current blocking layer are formed of GaAs; said filler layer, said cladding layer, said active layer, said further cladding layer and said cap layer are all formed of GaAlAs; and the mole ratio of AlAs to GaAs in each of said cladding layers is between 0.6 and 1.
Claim 7
Dependent Claim
34 words
A semiconductor laser as defined in claim 5 wherein said Mg content of said filler layer is approximately 0.06 atomic percent and the Mg content of said cladding layer is approximately 1.0 atomic percent.
Claim 8
Dependent Claim
40 words
A semiconductor laser as defined in claim 6 wherein said substrate, said filler layer and said cladding layer are each of p-type conductivity, and said blocking layer, said further cladding layer and said cap layer are each of n-type conductivity.
References Cited (Backward Citations)
JPS55125690A
Cited
JPS5742184A
Cited
JPS58115877A
Cited
US4545057A
Cited
US4589115A
Cited
EP0145203A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-12-20 | 1992-06-20 | 1992-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-12-20 | 1996-06-20 | 1996-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-12-20 | 2000-06-20 | 2000-12-20 | $7700.00 | Window Closed / Lapsed |