US4792474A
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Optical memory element
Assignee: Sharp Corp
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Filing: 1986-09-18
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Granted: 1988-12-20
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Expires: 2006-09-18
Abstract
Abstract An optical memory element comprises a substrate, a recording medium layer and an aluminum silicon nitride film laminated in this order.
Inventors
- 👤 Yoshiteru Murakami
- 👤 Akira Takahashi
- 👤 Yoshikazu Fujii
- 👤 Hiroyuki Katayama
- 👤 Kenji Ohta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:14
CPC Classifications
G; G11; G11B; G11B7/00; G11B7/24; G11B7/241; G11B7/252; G11B7/257; G11B7/2578; G11B11/00; G11B11/10; G11B11/105; G11B11/10582; G11B11/10586; G11B7/254; G11B7/242; G11B7/243; G11B2007/24302; G11B2007/24306; G11B2007/25705; G11B2007/25708; G11B2007/2571; G11B2007/25713; G11B7/253; G11B7/2531; Y; Y10; Y10S; Y10S430/00; Y10S430/146
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
22 words
An optical memory element comprising: a substrate; a recording medium layer; and a dielectric layer made of an aluminum silicon nitride film.
Claim 2
Dependent Claim
22 words
An optical memory element comprising: a substrate; a recording medium layer; and a dielectric layer made of an aluminum silicon nitride film.
Claim 3
Dependent Claim
35 words
The optical memory element of claim 1, wherein the recording medium layer is disposed on the substrate, and the dielectric layer made of an aluminum silicon nitride film is disposed on the recording medium layer.
Claim 4
Dependent Claim
33 words
The optical memory element of claim 1, wherein the dielectric layer made of aluminum silicon nitride film is disposed on the substrate, and the recording medium layer is disposed on the dielectric layer.
Claim 5
Dependent Claim
17 words
The optical memory element of claim 2, further comprising a reflective layer formed on the dielectric layer.
Claim 6
Dependent Claim
18 words
The optical memory element of claim 3, further comprising a reflective film formed on the recording medium layer.
Claim 7
Dependent Claim
37 words
An optical memory element comprising: a substrate; a first dielectric layer; a recording medium layer; and a second dielectric layer, wherein at least one of the first and second dielectric layers is an aluminum silicon nitride film.
Claim 8
Dependent Claim
37 words
An optical memory element comprising: a substrate; a first dielectric layer; a recording medium layer; and a second dielectric layer, wherein at least one of the first and second dielectric layers is an aluminum silicon nitride film.
Claim 9
Dependent Claim
40 words
The optical memory element of claim 6, wherein the first dielectric layer is formed on the substrate, the recording medium layer is formed on the first dielectric layer and the second dielectric layer is formed on the recording medium layer.
Claim 10
Dependent Claim
18 words
The optical memory element of claim 7, further comprising a reflective layer formed on the second dielectric layer.
Claim 11
Dependent Claim
105 words
An optical memory element having a high recording sensitivity and a lower heat energy loss which comprises as a layered construction: a transparent substrate made of glass, a polycarbonate or an acrylic material, a first transparent dielectric layer formed on the transparent substrate, a rare earth transition metal alloy thin film formed as a recording medium on the first transparent dielectric layer, a second transparent dielectric layer formed on the rare earth transition metal alloy thin film, and a reflective layer formed on the second transparent dielectric layer, at least one of said first and second transparent dielectric layers being an aluminum silicon nitride film.
Claim 12
Dependent Claim
105 words
An optical memory element having a high recording sensitivity and a lower heat energy loss which comprises as a layered construction: a transparent substrate made of glass, a polycarbonate or an acrylic material, a first transparent dielectric layer formed on the transparent substrate, a rare earth transition metal alloy thin film formed as a recording medium on the first transparent dielectric layer, a second transparent dielectric layer formed on the rare earth transition metal alloy thin film, and a reflective layer formed on the second transparent dielectric layer, at least one of said first and second transparent dielectric layers being an aluminum silicon nitride film.
Claim 13
Dependent Claim
24 words
The optical memory element of claim 1 wherein the silicon content in the aluminum silicon nitride film is at least about 2% by weight.
Claim 14
Dependent Claim
24 words
The optical memory element of claim 9 wherein the silicon content in the aluminum silicon nitride film is at least about 2% by weight.
Claim 15
Dependent Claim
22 words
The optical memory element of claim 1 wherein the silicon content in the aluminum silicon nitride film is about 2-8% by weight.
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