Array of coupled optical waveguides

Claim 2

An improved array of coupled metal clad ridge waveguide lasers on a semiconductor body having a plurality of individual ridge-shaped waveguides located adjacent to and laterally spaced from one another, a second semiconductor layer of said semiconductor body being provided above a first laser active waveguide layer, the improvement comprising: a continuous metal cladding layer extending above and in contact with portions forming upper portions of said ridge-shaped waveguides, said portions forming ohmic contacts with said metal cladding layer; said second semiconductor layer having zones that are free of said portions forming upper portions of said ridge-shaped waveguides, said zones being of reduced thickness laterally of and between two neighboring ones of said waveguides, said metal cladding layer extending above said zones of said second semiconductor layer; said neighboring waveguides being spaced apart so that leakage waves of TM wave-mode occur in said reduced thickness semiconductor layer to optically couple said neighboring waveguides by TM-mode waves.

Claim 3

An improved array as claimed in claim 1, further comprising: a layer of dielectric material extending laterally of an outermost one of said waveguides in said array, said dielectric layer extending outwardly from said array on a surface of said semiconductor body.

Claim 4

An array of coupled metal clad ridge waveguide lasers, comprising: a semiconductor body including a plurality of layers, said plurality of layers including an optically transmissive laser-active first layer and a second semiconductor layer located above said laser-active first layer; and a plurality of substantially parallel metal clad ridge waveguide lasers formed in said semiconductor body for conducting TE mode waves, said metal clad ridge waveguide lasers including individual ridge-shaped waveguides, said ridge-shaped waveguides include portions forming upper portions of said ridge-shaped waveguides and ohmic contacts, regions between said ridge-shaped waveguides being free of said portions forming upper portions of said waveguides and having a reduced thickness sufficient to cause TM-type leakage waves laterally of said ridge-shaped waveguides to optically couple neighboring ones of said waveguides, said neighboring waveguides being spaced from one another a predetermined distance, and a continuous metal cladding layer extending above and in contact with said portions forming upper portions of said ridge-shaped waveguides, said metal cladding layer forming ohmic contacts with said upper portions, said continuous metal cladding layer extending above said regions between said waveguides.

Claim 5

An array of coupled metal clad ridge waveguide lasers, comprising: a semiconductor body including a plurality of layers, said plurality of layers including an optically transmissive laser-active first layer and a second semiconductor layer located above said laser-active first layer; and a plurality of substantially parallel metal clad ridge waveguide lasers formed in said semiconductor body for conducting TE mode waves, said metal clad ridge waveguide lasers including individual ridge-shaped waveguides, said ridge-shaped waveguides include portions forming upper portions of said ridge-shaped waveguides and ohmic contacts, regions between said ridge-shaped waveguides being free of said portions forming upper portions of said waveguides and having a reduced thickness sufficient to cause TM-type leakage waves laterally of said ridge-shaped waveguides to optically couple neighboring ones of said waveguides, said neighboring waveguides being spaced from one another a predetermined distance, and a continuous metal cladding layer extending above and in contact with said portions forming upper portions of said ridge-shaped waveguides, said metal cladding layer forming ohmic contacts with said upper portions, said continuous metal cladding layer extending above said regions between said waveguides.

Claim 6

An array as claimed in claim 3, wherein said semiconductor body is of indium phosphide/indium gallium arsenide phosphide/indium phosphide for producing a laser emission in air of approximately 1300 nm, said predetermined distance between said parallel waveguides being in the range of 5 through 10 μm, and said area of reduced thickness having a thickness above said optically transmissive layer in the range of 0.05 through 0.3 μm.

Claim 7

An array as claimed in claim 3, wherein said semiconductor body is of gallium arsenide/gallium aluminum arsenide/gallium arsenide to produce a laser emission in air of approximately 0.8 μm, said predetermined distance between said parallel waveguides being in the range of 3 through 8 μm, and said area of reduced thickness having a thickness above said optically transmissive layer in the range of 0.05 through 0.2 μm.

Claim 8

An array as claimed in claim 3, further comprising: a strip-shaped layer of dielectric material extending adjacent an outermost one of said plurality of substantially parallel waveguides and at an outside of said array.

Claim 9

An array as claimed in claim 6, wherein said strip-shaped layer is disposed over said semiconductor body, and further comprising: a metal layer over said strip-shaped layer.

Claim 10

An array as claimed in claim 7, wherein said strip-shaped layer is of Al 2 O 3 .

Claim 11

An array as claimed in claim 3, wherein one of said layers of said semiconductor body is disposed over said optically transmissive layer and is of a reduced first thickness laterally of said waveguides to define said waveguides, said one layer being reduced to a second thickness in regions between neighboring ones of said plurality of parallel waveguides, said second thickness being less than said first thickness.

Claim 12

An array as claimed in claim 9, wherein said waveguides are laser diodes.

Claim 13

An array as claimed in claim 9, wherein said waveguides are passive waveguides.