US4783428A
Expired / Lapsed
US
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Method of producing a thermogenetic semiconductor device
Assignee: Semiconductor Components Industries LLC
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Filing: 1987-11-23
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Granted: 1988-11-08
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Expires: 2007-11-23
Abstract
Abstract A method is described for coupling the leadframe of a thermogenetic semiconductor device to a heatsink. This method consists of screening a first layer of thermally conductive epoxy on the heatsink. The first layer is cured and a second layer is screened on the first layer. The leadframe is then deposited on the second layer and the second layer is cured. The device then goes to encapsulation and final processing.
Inventors
- 👤 Martin A. Kalfus
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 03:50
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/461; H10W40/00; H10W40/01; H10W40/03; H10W40/037; H10W40/70; H10W40/77; H10W40/778; H10W72/00; H10W72/50; H10W72/531; H10W72/5363; H10W90/00; H10W90/701; H10W90/751; H10W90/756; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121; Y10T29/49124; Y10T29/4913; Y10T29/49146; Y10T29/53; Y10T29/5313; Y10T29/53174; Y10T29/53183
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
58 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of epoxy on said heatsink; curing said first layer of epoxy; depositing a second layer of epoxy on said first layer of epoxy; depositing a leadframe on said second layer of epoxy; and curing said second layer of epoxy.
Claim 2
Independent Claim
58 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of epoxy on said heatsink; curing said first layer of epoxy; depositing a second layer of epoxy on said first layer of epoxy; depositing a leadframe on said second layer of epoxy; and curing said second layer of epoxy.
Claim 3
Dependent Claim
15 words
The method of claim 1 wherein a thermogenetic semiconductor die is coupled to said leadframe.
Claim 4
Dependent Claim
27 words
The method of claim 2 further comprising the step of encapsulating said heatsink, first and second layers of epoxy, leadframe, and thermogenetic semiconductor die in a package.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein said first and second layers of epoxy are thermally conductive.
Claim 6
Dependent Claim
21 words
The method of claim 1 wherein said first and second layers of epoxy are approximately between 1 and 2 mills thick.
Claim 7
Independent Claim
70 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of thermally conductive epoxy on said heatsink; curing said first layer of thermally conductive epoxy; depositing a second layer of thermally conductive epoxy on said first layer of thermally conductive epoxy; depositing a leadframe on said second layer of thermally conductive epoxy; and curing said second layer of thermally conductive epoxy.
Claim 8
Independent Claim
70 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of thermally conductive epoxy on said heatsink; curing said first layer of thermally conductive epoxy; depositing a second layer of thermally conductive epoxy on said first layer of thermally conductive epoxy; depositing a leadframe on said second layer of thermally conductive epoxy; and curing said second layer of thermally conductive epoxy.
Claim 9
Dependent Claim
15 words
The method of claim 6 wherein a thermogenetic semiconductor die is coupled to said leadframe.
Claim 10
Dependent Claim
29 words
The method of claim 7 further comprising the step of encapsulating said heatsink, first and second layers of thermally conductive epoxy, leadframe, and thermogenetic semiconductor die in a package.
Claim 11
Dependent Claim
21 words
The method of claim 6 wherein said first and second layers of epoxy are approximately between 1 and 2 mills thick.
Claim 12
Independent Claim
96 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of thermally conductive epoxy on said heatsink; curing said first layer of thermally conductive epoxy; depositing a second layer of thermally conductive epoxy on said first layer of thermally conductive epoxy; depositing a leadframe having a thermogenetic semiconductor die coupled thereto on said second layer of thermally conductive epoxy; curing said second layer of thermally conductive epoxy; and encapsulating said heatsink, first and second layers of thermally conductive epoxy, leadframe, and thermogenetic semiconductor die in a package.
Claim 13
Independent Claim
96 words
A method of producing a thermogenetic semiconductor device comprising the steps of: providing a heatsink; depositing a first layer of thermally conductive epoxy on said heatsink; curing said first layer of thermally conductive epoxy; depositing a second layer of thermally conductive epoxy on said first layer of thermally conductive epoxy; depositing a leadframe having a thermogenetic semiconductor die coupled thereto on said second layer of thermally conductive epoxy; curing said second layer of thermally conductive epoxy; and encapsulating said heatsink, first and second layers of thermally conductive epoxy, leadframe, and thermogenetic semiconductor die in a package.
Claim 14
Dependent Claim
21 words
The method of claim 10 wherein said first and second layers of epoxy are approximately between 1 and 2 mills thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-08 | 1992-05-09 | 1992-11-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-08 | 1996-05-09 | 1996-11-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-08 | 2000-05-09 | 2000-11-08 | $7700.00 | Window Closed / Lapsed |