US4779497A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device and method of cutting off a portion of masking film adhered to a silicon wafer
Assignee: Teikoku Seiki KK
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Filing: 1987-01-23
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Granted: 1988-10-25
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Expires: 2007-01-23
Abstract
Abstract A method of cutting off a masking film of a silicon wafer comprising the steps of rotating the silicon wafer, feeding a heat wire continuously to the outer periphery of the silicon wafer and cutting off the outer periphery of the masking film along the outer perphery of the silicon wafer.
Inventors
- 👤 Masahiro Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:02
CPC Classifications
B; B23; B23D; B23D57/00; B23D57/003; B23D57/0046; B26; B26F; B26F3/00; B26F3/06; B26F3/08; B26F3/12; Y; Y10; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052; Y10T156/108; Y10T82/00; Y10T82/16; Y10T82/16081; Y10T83/00; Y10T83/04; Y10T83/0405; Y10T83/041; Y10T83/0414; Y10T83/0448; Y10T83/0467; Y10T83/202; Y10T83/2092; Y10T83/283; Y10T83/293; Y10T83/647; Y10T83/6667; Y10T83/6668; Y10T83/929; Y10T83/9292
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
119 words
A method of cutting off a portion of a masking film adhered to a silicon wafer comprising the steps of: rotating the silicon wafer to which the masking film is adhered, feeding a heated wire portion continuously to the outer periphery of the silicon wafer to contact same, cutting off the outer periphery of the masking film along the outer periphery of the silicon wafer during rotation of the silicon wafer and movement of said heated wire, and feeding an unheated wire portion continuously toward the cut portion of the outer periphery of the masking film along an edge of the silicon wafer to insure separation of the cut waste portion of the masking film from the silicon wafer.
Claim 2
Independent Claim
119 words
A method of cutting off a portion of a masking film adhered to a silicon wafer comprising the steps of: rotating the silicon wafer to which the masking film is adhered, feeding a heated wire portion continuously to the outer periphery of the silicon wafer to contact same, cutting off the outer periphery of the masking film along the outer periphery of the silicon wafer during rotation of the silicon wafer and movement of said heated wire, and feeding an unheated wire portion continuously toward the cut portion of the outer periphery of the masking film along an edge of the silicon wafer to insure separation of the cut waste portion of the masking film from the silicon wafer.
Claim 3
Dependent Claim
44 words
The method of claim 1 which includes positioning said heated wire portion and said unheated wire portion to cross the silicon wafer at an angle less than 90 degrees relative to its rotating axis during separation of said masking film from the silicon wafer.
Claim 4
Dependent Claim
16 words
The method of claim 2 wherein the heated wire portion is made of electric conductive material.
Claim 5
Dependent Claim
16 words
The method of claim 1 wherein the heated wire portion is made of electric conductive material.
Claim 6
Independent Claim
108 words
A device for cutting off a masking film of a silicon wafer to which the masking film is adhered comprising: means for rotating the silicon wafer to which the masking film is adhered, means for feeding a heated wire portion continuously to the outer periphery of the silicon wafer to contact same, means for cutting off the outer periphery of the masking film along the outer periphery of the silicon wafer, and means for feeding an unheated wire portion continuously toward the cut portion of the outer periphery of the silicon wafer to insure separation of the cut waste portion of the masking film from the silicon wafer.
Claim 7
Independent Claim
108 words
A device for cutting off a masking film of a silicon wafer to which the masking film is adhered comprising: means for rotating the silicon wafer to which the masking film is adhered, means for feeding a heated wire portion continuously to the outer periphery of the silicon wafer to contact same, means for cutting off the outer periphery of the masking film along the outer periphery of the silicon wafer, and means for feeding an unheated wire portion continuously toward the cut portion of the outer periphery of the silicon wafer to insure separation of the cut waste portion of the masking film from the silicon wafer.
Claim 8
Dependent Claim
46 words
A device as set forth in claim 5 which includes positioning said heated wire portion and said unheated wire to cross the silicon wafer at an angle less than 90 degrees relative to its rotating axis during separation of said masking film from the silicon wafer.
Claim 9
Dependent Claim
19 words
A device as set forth in claim 6 wherein the heated wire portion is made of electric conductive material.
Claim 10
Dependent Claim
19 words
A device as set forth in claim 5 wherein the heated wire portion is made of electric conductive material.
References Cited (Backward Citations)
US3677118A
Cited
US4018117A
Cited
US4063609A
Cited
SU865535A1
Cited
US4494523A
Cited
US4522679A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-10-25 | 1992-04-25 | 1992-10-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-10-25 | 1996-04-25 | 1996-10-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-10-25 | 2000-04-25 | 2000-10-25 | $7700.00 | Window Closed / Lapsed |