Porous silicon carbide sinter and its production

Claim 2

A porous silicon carbide sinter comprising a sinter based on silicon carbide, which has a three dimensional network structure mainly composed of silicon carbide plate crystals of an average aspect ratio of 3 to 50 and an average length along the direction of the major axis of 0.5 to 1000 μm, said network structure having an average sectional area of open pores of 0.01 to 250,000 μm 2 , the open pore range of said three dimensional network being 20 to 95% by volume, based on the total volume, said plate crystals accounting for at least 20 parts by weight of 100 parts by weight of said porous silicon carbide sinter, and the specific surface area of said sinter is at least 0.05 m 2 /g.

Claim 3

A process for producing a porous silicon carbide sinter having a three-dimensional network structure composed mainly of silicon carbide plate crystals having an average length along the direction of the major axis of 10 to 1,000 μm and an average aspect ratio of to 3 to 50, wherein the open pores of said network have an average sectional area within the range of from 400 to 250,000 μm 2 , the open pore range of said three-dimensional network being 20 to 95% by volume based on the total volume, and said plate crystals accounting for at least 20 parts by weight of 100 parts by weight of said porous silicon carbide sinter, comprising a sequence of the following steps (a) and (b): (a) a step of molding a silicon carbide powder having an average particle diameter of 10 μm or below and containing at least 60% by weight of β form, 2H-form and amorphous silicon carbides into a desired shape, and (b) a step of baking the molding obtained in step (a) at a temperature within the range of from 1,900° to 2,300° C. in a heat-resistant vessel which can prevent the external air from entering while preventing the silicon carbide from being evaporated.

Claim 4

A process for producing a porous silicon carbide sinter having a three-dimensional network structure composed mainly of silicon carbide plate crystals having an average length along the direction of the major axis of 10 to 1,000 μm and an average aspect ratio of to 3 to 50, wherein the open pores of said network have an average sectional area within the range of from 400 to 250,000 μm 2 , the open pore range of said three-dimensional network being 20 to 95% by volume based on the total volume, and said plate crystals accounting for at least 20 parts by weight of 100 parts by weight of said porous silicon carbide sinter, comprising a sequence of the following steps (a) and (b): (a) a step of molding a silicon carbide powder having an average particle diameter of 10 μm or below and containing at least 60% by weight of β form, 2H-form and amorphous silicon carbides into a desired shape, and (b) a step of baking the molding obtained in step (a) at a temperature within the range of from 1,900° to 2,300° C. in a heat-resistant vessel which can prevent the external air from entering while preventing the silicon carbide from being evaporated.

Claim 5

A process according to claim 2, wherein the baking in step (b) is carried out by controlling the amount of silicon carbide evaporated to 5% by weight or below.

Claim 6

A process for producing a porous silicon carbide sinter having a three-dimensional network structure composed mainly of silicon carbide plate crystals having an average length along the direction of major axis of 0.5 to 200 μm and an average aspect ratio of to 3 to 50, wherein the open pores of said network structure have an average sectional area within the range of from 0.01 to 10,000 μm, the open pore range of said three-dimensional network being 20 to 95% by volume based on the total volume, and said plate crystals accounting for at least 20 parts by weight of 100 parts by weight of said porous silicon carbide sinter, comprising a sequence of the following steps (a) to (c): (a) a step of uniformly mixing 100 parts by weight of a starting material, said starting material comprising a silicon carbide powder having an average particle diameter of 10 μm or below and consisting of α-form, β-form and amorphous silicon carbides and inevitable impurities with 10 parts by weight or below of at least one member selected from the group consisting of aluminum, aluminum diboride, aluminum carbide, aluminum nitride, aluminum oxide, boron, boron carbide, boron nitride, boron oxide, calcium oxide, calcium carbide, chromium, chromium boride, chromium nitride, chromium oxide, iron, iron carbide, iron oxide, lanthanum boride, lanthanum oxide, lithum oxide, silicon, silicon nitride, titanium, titanium oxide, titanium dioxide, titanium trioxide, and yttrium oxide; (b) a step of molding the mixture obtained in step (a); and (c) a step of baking the molding obtained in step (b) at a temperature within the range of from 1,700° to 2,300° C. in a heat-resistant vessel which can prevent the external air from entering while preventing the silicon carbide from being evaporated.

Claim 7

A process for producing a porous silicon carbide sinter having a three-dimensional network structure composed mainly of silicon carbide plate crystals having an average length along the direction of major axis of 0.5 to 200 μm and an average aspect ratio of to 3 to 50, wherein the open pores of said network structure have an average sectional area within the range of from 0.01 to 10,000 μm, the open pore range of said three-dimensional network being 20 to 95% by volume based on the total volume, and said plate crystals accounting for at least 20 parts by weight of 100 parts by weight of said porous silicon carbide sinter, comprising a sequence of the following steps (a) to (c): (a) a step of uniformly mixing 100 parts by weight of a starting material, said starting material comprising a silicon carbide powder having an average particle diameter of 10 μm or below and consisting of α-form, β-form and amorphous silicon carbides and inevitable impurities with 10 parts by weight or below of at least one member selected from the group consisting of aluminum, aluminum diboride, aluminum carbide, aluminum nitride, aluminum oxide, boron, boron carbide, boron nitride, boron oxide, calcium oxide, calcium carbide, chromium, chromium boride, chromium nitride, chromium oxide, iron, iron carbide, iron oxide, lanthanum boride, lanthanum oxide, lithum oxide, silicon, silicon nitride, titanium, titanium oxide, titanium dioxide, titanium trioxide, and yttrium oxide; (b) a step of molding the mixture obtained in step (a); and (c) a step of baking the molding obtained in step (b) at a temperature within the range of from 1,700° to 2,300° C. in a heat-resistant vessel which can prevent the external air from entering while preventing the silicon carbide from being evaporated.

Claim 8

A process according to claim 4, wherein the baking in step (c) is carried out by controlling the amount of silicon carbide evaporated to 5% by weight or below.