US4774164A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chrome mask etch
Assignee: Motorola Solutions Inc
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Filing: 1987-04-06
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Granted: 1988-09-27
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Expires: 2007-04-06
Abstract
Abstract Patterning a chrome mask with PBS (polybutenesulfone) photoresist is enabled in a plasma reactor by covering the patterned photoresist with a glass layer, planarizing the glass layer, etching the photoresist and then etching the chrome mask. The pattern transferred to the chrome mask is the negative or inverse of the pattern in the photoresist layer.
Inventors
- 👤 Paula E. Peavey
- 👤 Jerris H. Peavey
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 12:25
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/80; G03F1/50; G03F7/00; G03F7/26; G03F7/36
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
108 words
A process for plasma etching a first layer in the presence of a patterned, decomposable mask layer comprising the steps of: covering said first layer and said mask layer with a layer of glass to fill the pattern in said mask layer; planarizing said glass layer so that the upper surface of said glass layer is approximately the same height as said mask layer; removing said mask layer to expose portions of said first layer and etching said exposed portions of said first layer by contacting said mask layer with a plasma glow discharge to remove the mask layer and continuing said discharge to etch said first layer.
Claim 2
Dependent Claim
108 words
A process for plasma etching a first layer in the presence of a patterned, decomposable mask layer comprising the steps of: covering said first layer and said mask layer with a layer of glass to fill the pattern in said mask layer; planarizing said glass layer so that the upper surface of said glass layer is approximately the same height as said mask layer; removing said mask layer to expose portions of said first layer and etching said exposed portions of said first layer by contacting said mask layer with a plasma glow discharge to remove the mask layer and continuing said discharge to etch said first layer.
Claim 3
Dependent Claim
17 words
The process as set forth in claim 1 wherein said etch of the first layer is anisotropic.
Claim 4
Dependent Claim
27 words
The process as set forth in claim 1 wherein said covering step comprises spinning on a glassy slurry and baking the layer to increase the density thereof.
Claim 5
Dependent Claim
30 words
The process as set forth in claim 1 wherein said first layer comprises chrome and said glow discharge is in a gas mixture comprising CCl 4 and CO 2 .
Claim 6
Dependent Claim
30 words
The process as set forth in claim 1 wherein said covering step comprises: coating said first layer to a thickness of 100-200 nm. over the pattern in said mask layer.
Claim 7
Dependent Claim
15 words
The process as set forth in claim 1 wherein said mask layer comprises e-beam photoresist.
Claim 8
Dependent Claim
15 words
The process as set forth in claim 6 wherein said mask layer comprising poly(olefin sulfone).
Claim 9
Dependent Claim
14 words
The process as set forth in claim 7 wherein said mask layer comprises PBS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-27 | 1992-03-28 | 1992-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-27 | 1996-03-28 | 1996-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-27 | 2000-03-28 | 2000-09-27 | $7700.00 | Window Closed / Lapsed |