US4773077A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Internal reflection interferometric semiconductor laser apparatus
Assignee: Sharp Corp
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Filing: 1986-06-16
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Granted: 1988-09-20
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Expires: 2006-06-16
Abstract
Abstract A semiconductor laser apparatus comprising: a semiconductor laser chip with a first light-emitting facet and a second light-emitting facet containing an interference effect-creating means therein for creating an interference effect within the resonator(s) thereof, a laser light-reflecting means for returning a part of the laser light emitted from the first light-emitting facet of said semiconductor laser chip to the first light-emitting facet, and a mounting base on which said semiconductor laser chip and said laser light-reflecting means are fixed in a parallel manner.
Inventors
- 👤 Osamu Yamamoto
- 👤 Hiroshi Hayashi
- 👤 Saburo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/14
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
100 words
In a semiconductor laser apparatus comprising a semiconductor laser chip, said semiconductor laser chip is of an internal reflector interferometric type, has a first light-emitting facet and a second light-emitting facet, and contains an interference effect-creating means therein for creating an interference effect within the resonator(s) thereof, and further, a laser light-reflecting means for returning a part of the laser light emitted from the first light-emitting facet of said semiconductor laser chip to the first light-emitting facet, and a mounting base on which said semiconductor laser chip and said laser light-reflecting means are fixed in a parallel manner are provided.
Claim 2
Dependent Claim
100 words
In a semiconductor laser apparatus comprising a semiconductor laser chip, said semiconductor laser chip is of an internal reflector interferometric type, has a first light-emitting facet and a second light-emitting facet, and contains an interference effect-creating means therein for creating an interference effect within the resonator(s) thereof, and further, a laser light-reflecting means for returning a part of the laser light emitted from the first light-emitting facet of said semiconductor laser chip to the first light-emitting facet, and a mounting base on which said semiconductor laser chip and said laser light-reflecting means are fixed in a parallel manner are provided.
Claim 3
Dependent Claim
33 words
A semiconductor laser apparatus according to claim 1, wherein said interference effect-creating means is composed of an area of the active layer having a different thickness in the central area of the resonator.
Claim 4
Dependent Claim
67 words
A semiconductor laser apparatus according to claim 1, wherein said interference effect-creating means is composed of resonators having different cavity lengths in which a part of the waveguide in one resonator is common to that of the waveguide in the other resonator from the second light-emitting facet to the branching portion and the other parts of the waveguides in the resonators are branched at said branch portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |