US4772488A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Organic binder removal using CO2 plasma
Assignee: General Electric Co
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Filing: 1987-03-23
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Granted: 1988-09-20
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Expires: 2007-03-23
Abstract
Abstract An improved method of fabricating thick film dielectrics and copper conductors comprises depositing and drying an appropriate thick-film ink, treating the resulting patterned layer with a carbon dioxide plasma until substantially all of the organic vehicle is removed therefrom and then firing the layer in an inert atmosphere. In an alternate embodiment, a dried dielectric ink is initially treated with an oxygen plasma until about 75 to 99 percent of the vehicle is removed. Multilayer copper-based circuit structure fabricated utilizing the subject method are characterized by excellent integrity of the dielectric layers.
Inventors
- 👤 Harry L. Pinch
- 👤 Barry J. Thaler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 11:02
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4664; H05K3/4667; H05K3/10; H05K3/12; H05K3/1283; H05K3/1291; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W70/098; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K1/09; H05K1/092; H05K2203/00; H05K2203/09; H05K2203/095; H05K2203/11; H05K2203/1126
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
133 words
In a method of fabricating a thick-film dielectric structure free of residual organic material on a substrate including a copper conductor in contact with the dielectric structure comprising: (a) depositing on the substrate a pattern of a thick film dielectric ink comprising a suitable glass frit and an organic vehicle; (b) drying the ink to form a patterned layer; (c) treating the layer with a plasma at a temperature below the thermal decomposition temperature of the organic vehicle for a time sufficient to substantially selectively remove the organic vehicle from the layer while minimally oxidizing the copper conductor; and (d) firing the layer at or above the glass transition temperature of the glass frit in an inert atmosphere until the glass frit fuses, the improvement wherein the plasma is a carbon dioxide plasma.
Claim 2
Dependent Claim
133 words
In a method of fabricating a thick-film dielectric structure free of residual organic material on a substrate including a copper conductor in contact with the dielectric structure comprising: (a) depositing on the substrate a pattern of a thick film dielectric ink comprising a suitable glass frit and an organic vehicle; (b) drying the ink to form a patterned layer; (c) treating the layer with a plasma at a temperature below the thermal decomposition temperature of the organic vehicle for a time sufficient to substantially selectively remove the organic vehicle from the layer while minimally oxidizing the copper conductor; and (d) firing the layer at or above the glass transition temperature of the glass frit in an inert atmosphere until the glass frit fuses, the improvement wherein the plasma is a carbon dioxide plasma.
Claim 3
Dependent Claim
24 words
A method in accordance with claim 1, wherein the plasma treatment is carried out at a temperature of from about 100° to 200° C.
Claim 4
Dependent Claim
24 words
A method in accordance with claim 1, wherein the plasma-treated layer is fired at a temperature of from about 850° to about 950° C.
Claim 5
Dependent Claim
14 words
A method in accordance with claim 1, wherein the layer is fired in nitrogen.
Claim 6
Dependent Claim
44 words
A method in accordance with claim 1, wherein, prior to treatment with the carbon dioxide plasma, the dried ink is treated with an oxygen plasma for a time sufficient to remove from about 75 to about 99 percent by weight of the organic vehicle.
Claim 7
Dependent Claim
120 words
In a method of fabricating a thick film copper conductor on a substrate comprising: (a) depositing on the substrate a pattern of a thick film ink comprising a suitable glass frit, copper particles and an organic vehicle; (b) drying the ink to form a patterned layer; (c) treating the layer with a plasma at a temperature below the thermal decomposition temperature of the organic vehicle for a time sufficient to substantially selectively remove the organic vehicle from the layer while minimally oxidizing the copper conductor; and (d) firing the layer at or above the glass transition temperature of the glass frit in an inert atmosphere until the glass frit fuses, the improvement wherein the plasma is a carbon dioxide plasma.
Claim 8
Dependent Claim
120 words
In a method of fabricating a thick film copper conductor on a substrate comprising: (a) depositing on the substrate a pattern of a thick film ink comprising a suitable glass frit, copper particles and an organic vehicle; (b) drying the ink to form a patterned layer; (c) treating the layer with a plasma at a temperature below the thermal decomposition temperature of the organic vehicle for a time sufficient to substantially selectively remove the organic vehicle from the layer while minimally oxidizing the copper conductor; and (d) firing the layer at or above the glass transition temperature of the glass frit in an inert atmosphere until the glass frit fuses, the improvement wherein the plasma is a carbon dioxide plasma.
References Cited (Backward Citations)
US4619836A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-09-20 | 1992-03-21 | 1992-09-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-09-20 | 1996-03-21 | 1996-09-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-09-20 | 2000-03-21 | 2000-09-20 | $7700.00 | Window Closed / Lapsed |